M.C. Habrard

876 total citations
6 papers, 308 citations indexed

About

M.C. Habrard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics. According to data from OpenAlex, M.C. Habrard has authored 6 papers receiving a total of 308 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 1 paper in Nuclear and High Energy Physics. Recurrent topics in M.C. Habrard's work include Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Thin-Film Transistor Technologies (3 papers). M.C. Habrard is often cited by papers focused on Semiconductor materials and devices (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Thin-Film Transistor Technologies (3 papers). M.C. Habrard collaborates with scholars based in France, Canada and Belgium. M.C. Habrard's co-authors include J.C. Bruyère, S. Poulin, S. C. Gujrathi, E. Bustarret, Stanisław Krawczyk, R. Truche, L. Blanquart, P. Delpierre, J. de Pontcharra and N. Fourches and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Non-Crystalline Solids.

In The Last Decade

M.C. Habrard

5 papers receiving 297 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M.C. Habrard France	4	296	189	36	28	22	6	308
Dmitry Hits United States	6	142 0.5×	90 0.5×	52 1.4×	31 1.1×	30 1.4×	17	191
G. Giroult-Matlakowski France	6	334 1.1×	96 0.5×	108 3.0×	36 1.3×	33 1.5×	12	354
J.L. Leray France	12	407 1.4×	108 0.6×	15 0.4×	20 0.7×	18 0.8×	28	441
B. Anthony United States	10	292 1.0×	178 0.9×	75 2.1×	28 1.0×	22 1.0×	19	331
D. Wristers United States	9	344 1.2×	118 0.6×	37 1.0×	16 0.6×	22 1.0×	25	354
G. Weidner Germany	10	281 0.9×	171 0.9×	72 2.0×	31 1.1×	10 0.5×	37	315
M. Ohkura Japan	11	351 1.2×	123 0.7×	37 1.0×	57 2.0×	5 0.2×	50	381
K.S. Krisch United States	12	675 2.3×	171 0.9×	66 1.8×	22 0.8×	26 1.2×	23	694
P. E. R. Nordquist United States	7	261 0.9×	67 0.4×	130 3.6×	13 0.5×	7 0.3×	21	301
K. Reid United States	8	320 1.1×	168 0.9×	91 2.5×	25 0.9×	25 1.1×	22	381

Countries citing papers authored by M.C. Habrard

Since Specialization

Citations

This map shows the geographic impact of M.C. Habrard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.C. Habrard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.C. Habrard more than expected).

Fields of papers citing papers by M.C. Habrard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.C. Habrard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.C. Habrard. The network helps show where M.C. Habrard may publish in the future.

Co-authorship network of co-authors of M.C. Habrard

This figure shows the co-authorship network connecting the top 25 collaborators of M.C. Habrard. A scholar is included among the top collaborators of M.C. Habrard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.C. Habrard. M.C. Habrard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

6 of 6 papers shown

1.

Dierickx, B., I. Debusschere, Eddy Simoen, et al.. (2003). Integration of CMOS-electronics in an SOI layer on high-resistivity silicon substrates. IEEE Conference on Nuclear Science Symposium and Medical Imaging. 414–416.

2.

Blanquart, L., P. Delpierre, M.C. Habrard, et al.. (1994). Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology. IEEE Transactions on Nuclear Science. 41(6). 2525–2529. 13 indexed citations

3.

Dentan, M., E. Delagnes, N. Fourches, et al.. (1993). Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science. 40(6). 1555–1560. 27 indexed citations

4.

Habrard, M.C., et al.. (1989). Differences in the electrical properties of the interfaces of PECVD silicon nitride with amorphous and crystalline silicon. Journal of Non-Crystalline Solids. 115(1-3). 45–47. 3 indexed citations

5.

Bustarret, E., et al.. (1988). Configurational statistics ina-SixNyHzalloys: A quantitative bonding analysis. Physical review. B, Condensed matter. 38(12). 8171–8184. 259 indexed citations

6.

Habrard, M.C., et al.. (1987). Deposition of amorphous SiNxH films on InP in the presence of AsH3. Applied Physics Letters. 51(25). 2142–2143. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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