M.C. Carmo

1.1k total citations
80 papers, 905 citations indexed

About

M.C. Carmo is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M.C. Carmo has authored 80 papers receiving a total of 905 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Materials Chemistry, 54 papers in Electrical and Electronic Engineering and 41 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M.C. Carmo's work include Semiconductor Quantum Structures and Devices (28 papers), Silicon Nanostructures and Photoluminescence (28 papers) and ZnO doping and properties (17 papers). M.C. Carmo is often cited by papers focused on Semiconductor Quantum Structures and Devices (28 papers), Silicon Nanostructures and Photoluminescence (28 papers) and ZnO doping and properties (17 papers). M.C. Carmo collaborates with scholars based in Portugal, Russia and Germany. M.C. Carmo's co-authors include A.J. Neves, Н. А. Соболев, C.J. Tang, M.J. Soares, E. Alves, Marius Grundmann, D. Bimberg, G. Davies, T. Monteiro and M. Peres and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M.C. Carmo

80 papers receiving 871 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.C. Carmo Portugal 18 670 513 321 130 109 80 905
S. Pöykkö Finland 15 562 0.8× 518 1.0× 296 0.9× 181 1.4× 84 0.8× 21 900
J. P. Goss United Kingdom 19 963 1.4× 691 1.3× 347 1.1× 153 1.2× 102 0.9× 44 1.2k
G.J. Adriaenssens Belgium 18 745 1.1× 824 1.6× 167 0.5× 82 0.6× 80 0.7× 72 1.2k
Mathias Schumacher Germany 11 592 0.9× 411 0.8× 203 0.6× 110 0.8× 97 0.9× 18 806
B. Theys France 17 625 0.9× 610 1.2× 410 1.3× 152 1.2× 109 1.0× 66 1.0k
G. Lippold Germany 16 480 0.7× 506 1.0× 204 0.6× 78 0.6× 94 0.9× 43 690
R. E. Sah Germany 13 433 0.6× 405 0.8× 190 0.6× 36 0.3× 221 2.0× 42 754
Masashi Suezawa Japan 17 487 0.7× 784 1.5× 401 1.2× 66 0.5× 104 1.0× 107 956
Hideo Isshiki Japan 21 959 1.4× 791 1.5× 403 1.3× 165 1.3× 39 0.4× 74 1.2k
J. M. Meese United States 15 337 0.5× 416 0.8× 209 0.7× 78 0.6× 83 0.8× 51 628

Countries citing papers authored by M.C. Carmo

Since Specialization
Citations

This map shows the geographic impact of M.C. Carmo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.C. Carmo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.C. Carmo more than expected).

Fields of papers citing papers by M.C. Carmo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.C. Carmo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.C. Carmo. The network helps show where M.C. Carmo may publish in the future.

Co-authorship network of co-authors of M.C. Carmo

This figure shows the co-authorship network connecting the top 25 collaborators of M.C. Carmo. A scholar is included among the top collaborators of M.C. Carmo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.C. Carmo. M.C. Carmo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Danilov, Yu. A., А. В. Кудрин, О. В. Вихрова, et al.. (2009). Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs. Journal of Physics D Applied Physics. 42(3). 35006–35006. 6 indexed citations
2.
Stepina, N. P., А. В. Двуреченский, В. А. Володин, et al.. (2008). MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiation. Thin Solid Films. 517(1). 309–312. 6 indexed citations
3.
Chahboun, A., M. I. Vasilevskiy, N. V. Baidus, et al.. (2008). Further insight into the temperature quenching of photoluminescence from InAs∕GaAs self-assembled quantum dots. Journal of Applied Physics. 103(8). 20 indexed citations
4.
Gehlhoff, W., Е. М. Кайдашев, A. Rahm, et al.. (2007). Electron Paramagnetic Resonance Characterization of Mn- and Co-Doped ZnO Nanowires. AIP conference proceedings. 893. 63–64. 1 indexed citations
5.
Tang, C.J., A.J. Neves, S. Pereira, et al.. (2007). Effect of nitrogen and oxygen addition on morphology and texture of diamond films (from polycrystalline to nanocrystalline). Diamond and Related Materials. 17(1). 72–78. 46 indexed citations
6.
Stepina, N. P., A. I. Yakimov, A. V. Nenashev, et al.. (2006). Photoconduction in tunnel-coupled Ge/Si quantum dot arrays. Journal of Experimental and Theoretical Physics. 103(2). 269–277. 8 indexed citations
7.
Соболев, Н. А., Joaquim P. Leitão, E. Alves, et al.. (2006). Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice. Journal of Luminescence. 121(2). 417–420. 9 indexed citations
8.
Rogers, David J., F. Hosseini Téhérani, T. Monteiro, et al.. (2006). Investigations of p‐type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(4). 1038–1041. 15 indexed citations
9.
Yakimov, A. I., А. В. Двуреченский, G. M. Minkov, et al.. (2006). Hopping magnetoresistance in two‐dimensional arrays of Ge/Si quantum dots. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(2). 296–299. 3 indexed citations
10.
Monteiro, T., A.J. Neves, M.J. Soares, et al.. (2005). Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions. Applied Physics Letters. 87(19). 25 indexed citations
11.
Alves, E., et al.. (2005). Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer. Materials Science and Engineering B. 124-125. 462–465. 5 indexed citations
12.
Соболев, Н. А., Joaquim P. Leitão, M.C. Carmo, et al.. (2004). Structural Characterization and Luminescence of Ge/Si Quantum Dots. Materials science forum. 455-456. 540–544. 1 indexed citations
13.
Guffarth, F., R. Heitz, M. Geller, et al.. (2003). Radiation hardness of InGaAs/GaAs quantum dots. Applied Physics Letters. 82(12). 1941–1943. 43 indexed citations
14.
Соболев, Н. А., et al.. (2003). Influence of defects on the luminescence of Ge/Si quantum dots. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1267–1270. 10 indexed citations
15.
Соболев, Н. А., et al.. (2001). Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures. physica status solidi (b). 224(1). 93–96. 39 indexed citations
16.
Carmo, M.C., et al.. (1997). 6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy. Materials Science and Engineering B. 46(1-3). 275–277. 4 indexed citations
17.
Carmo, M.C., et al.. (1989). Photoluminescence from Transition Metals in Silicon. Materials science forum. 38-41. 421–426. 5 indexed citations
18.
Nazaré, Maria Helena, et al.. (1989). Luminescence from transition metal centres in silicon doped with silver and nickel. Materials Science and Engineering B. 4(1-4). 273–276. 13 indexed citations
19.
Carmo, M.C., et al.. (1988). Optically Active Transition Metal Defects in Silicon. MRS Proceedings. 138. 3 indexed citations
20.
Davies, Gordon, et al.. (1984). The production and destruction of the C-related 969 meV absorption band in Si. Solid State Communications. 50(12). 1057–1061. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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