D. Skarlatos

690 total citations
49 papers, 562 citations indexed

About

D. Skarlatos is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Skarlatos has authored 49 papers receiving a total of 562 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Skarlatos's work include Semiconductor materials and devices (36 papers), Silicon and Solar Cell Technologies (19 papers) and Semiconductor materials and interfaces (15 papers). D. Skarlatos is often cited by papers focused on Semiconductor materials and devices (36 papers), Silicon and Solar Cell Technologies (19 papers) and Semiconductor materials and interfaces (15 papers). D. Skarlatos collaborates with scholars based in Greece, France and United States. D. Skarlatos's co-authors include D. Tsoukalas, A. Claverie, C. Tsamis, P. Normand, David S. McPhail, N. Cherkashin, Panagiotis Dimitrakis, C. A. Krontiras, S. N. Georga and J. Lundsgaard Hansen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

D. Skarlatos

45 papers receiving 548 citations

Peers

Countries citing papers authored by D. Skarlatos

Since Specialization

Citations

This map shows the geographic impact of D. Skarlatos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Skarlatos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Skarlatos more than expected).

Fields of papers citing papers by D. Skarlatos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Skarlatos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Skarlatos. The network helps show where D. Skarlatos may publish in the future.

Co-authorship network of co-authors of D. Skarlatos

This figure shows the co-authorship network connecting the top 25 collaborators of D. Skarlatos. A scholar is included among the top collaborators of D. Skarlatos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Skarlatos. D. Skarlatos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Photodetectors based on chemical vapor deposition or liquid processed multi-wall carbon nanotubes 2023 ·Optical Materials ·(unknown), (unknown), G. Pilatos, Th. Speliotis, Κωνσταντίνος Γιαννακόπουλος, A. Kyriakis, D. Skarlatos, Ν. Γλέζος	2
2	Degradation of Pt-Al ₂ O ₃ -Ge Metal Oxide Semiconductor Structures due to Pt-Al ₂ O ₃ Induced Reactions 2020 ·ECS Journal of Solid State Science and Technology ·V. Ioannou-Sougleridis, (unknown), Ν. Vouroutzis, K. Mergia, (unknown), D. Skarlatos	1
3	Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression 2020 ·Materials Science in Semiconductor Processing ·D. Skarlatos, (unknown), (unknown), V. Ioannou-Sougleridis, Ν. Vouroutzis, J. Stoëmenos	0
4	Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage 2019 ·Advanced Functional Materials ·(unknown), D. Skarlatos, G. Papadimitropoulos, Ν. Vouroutzis, Nikos Boukos, Ν. Γλέζος	2
5	(Invited) Issues with n-type Dopants in Germanium 2018 ·ECS Transactions ·D. Skarlatos, V. Ioannou-Sougleridis, Mario Barozzi, G. Pepponi, Ν. Vouroutzis, (unknown), J. Stoëmenos, (unknown), B. Colombeau	3
6	Interface properties of Al–Al2O3–Ge MIS capacitors and the effect of forming gas annealing 2016 ·Microelectronic Engineering ·V. Ioannou-Sougleridis, (unknown), (unknown), S. Ladas, D. Skarlatos	4
7	Nitrogen induced modifications of MANOS memory properties 2015 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Νικόλαος Νικολάου, V. Ioannou-Sougleridis, Panagiotis Dimitrakis, P. Normand, D. Skarlatos, Κωνσταντίνος Γιαννακόπουλος, S. Ladas, Béatrice Pécassou, G. Benassayag, Kaupo Kukli, Jaakko Niinistö, Mikko Ritala, Markku Leskelä	1
8	Inert ambient annealing effect on MANOS capacitor memory characteristics 2015 ·Nanotechnology ·Νικόλαος Νικολάου, Panagiotis Dimitrakis, P. Normand, D. Skarlatos, Κωνσταντίνος Γιαννακόπουλος, K. Mergia, V. Ioannou-Sougleridis, Kaupo Kukli, Jaakko Niinistö, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä	24
9	The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors 2012 ·Thin Solid Films ·Νικόλαος Νικολάου, V. Ioannou-Sougleridis, Panagiotis Dimitrakis, P. Normand, D. Skarlatos, Κωνσταντίνος Γιαννακόπουλος, Kaupo Kukli, Jaakko Niinistö, Mikko Ritala, Markku Leskelä	8
10	ZrO2 and Al2O3 Thin Films on Ge(100) Grown by ALD: An XPS Investigation 2011 ·Surface Science Spectra ·Labrini Sygellou, (unknown), (unknown), D. Skarlatos, S. N. Georga, C. A. Krontiras, S. Ladas, S. Kennou	20
11	Simulation of the electrical characteristics of MOS capacitors on strained‐silicon substrates 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Nikolaos Kelaidis, D. Skarlatos, C. Tsamis	7
12	Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates 2008 ·Thin Solid Films ·Nikolaos Kelaidis, V. Ioannou-Sougleridis, D. Skarlatos, C. Tsamis, C. A. Krontiras, S. N. Georga, (unknown), (unknown)	1
13	Implantation and diffusion of phosphorous in germanium 2006 ·Materials Science in Semiconductor Processing ·A. Chroneos, D. Skarlatos, C. Tsamis, (unknown), David S. McPhail, (unknown)	59
14	Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2∕Si interfaces 2006 ·Journal of Applied Physics ·D. Skarlatos, (unknown), (unknown), C. Tsamis	4
15	Interstitial injection during oxidation of very low energy nitrogen-implanted silicon 2005 ·Materials Science and Engineering B ·D. Skarlatos, C. Tsamis, Michele Perego, M. Fanciulli, D. Tsoukalas	1
16	Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation 2004 ·Journal of Applied Physics ·D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, Michele Perego, S. Ferrari, M. Fanciulli, D. Tsoukalas	6
17	Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis 2003 ·Microelectronic Engineering ·P. Normand, E. Kapetanakis, Panagiotis Dimitrakis, D. Skarlatos, D. Tsoukalas, K. Beltsios, A. Claverie, G. Benassayag, Caroline Bonafos, M. Carrada, N. Cherkashin, V. Soncini, Aditya Agarwal, (unknown), (unknown)	9
18	Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy 2003 ·Applied Physics Letters ·A. Kanjilal, J. Lundsgaard Hansen, П. И. Гайдук, A. Nylandsted Larsen, N. Cherkashin, A. Claverie, P. Normand, (unknown), D. Skarlatos, D. Tsoukalas	98
19	Point defect injection during nitrous oxidation of silicon at low temperatures 2000 ·Journal of Applied Physics ·D. Skarlatos, D. Tsoukalas, (unknown), A. Claverie	11
20	On selecting the minimum observation time for determining the Leq of a random noise with a given level of confidence 1992 ·Journal of Sound and Vibration ·D. Skarlatos, Panagis Drakatos	13

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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