F. Höhnsdorf

801 total citations
17 papers, 638 citations indexed

About

F. Höhnsdorf is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, F. Höhnsdorf has authored 17 papers receiving a total of 638 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 16 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in F. Höhnsdorf's work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (9 papers) and Semiconductor Lasers and Optical Devices (7 papers). F. Höhnsdorf is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (9 papers) and Semiconductor Lasers and Optical Devices (7 papers). F. Höhnsdorf collaborates with scholars based in Germany, United Kingdom and United States. F. Höhnsdorf's co-authors include W. Stolz, J. Koch, S. Leu, Carsten Agert, B. Borchert, H. Grüning, J. Camassel, Peter J. Klar, W. Heimbrodt and Martin R. Hofmann and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Quantum Electronics and Journal of Crystal Growth.

In The Last Decade

F. Höhnsdorf

17 papers receiving 593 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Höhnsdorf Germany	10	619	553	305	67	38	17	638
J. Konttinen Finland	13	562 0.9×	514 0.9×	212 0.7×	82 1.2×	20 0.5×	48	612
M. Sadeghi Sweden	16	566 0.9×	541 1.0×	137 0.4×	130 1.9×	44 1.2×	64	623
S. Illek Germany	15	461 0.7×	597 1.1×	161 0.5×	36 0.5×	38 1.0×	52	654
Hopil Bae United States	14	499 0.8×	463 0.8×	217 0.7×	51 0.8×	30 0.8×	38	552
Masao Kawaguchi Japan	10	356 0.6×	343 0.6×	227 0.7×	40 0.6×	23 0.6×	29	412
P. Blood United Kingdom	9	310 0.5×	272 0.5×	145 0.5×	79 1.2×	52 1.4×	18	387
G. Danan United States	6	563 0.9×	258 0.5×	120 0.4×	104 1.6×	41 1.1×	10	574
C. Ellmers Germany	10	264 0.4×	287 0.5×	94 0.3×	66 1.0×	24 0.6×	16	347
J.D. Thomson United Kingdom	11	472 0.8×	413 0.7×	242 0.8×	122 1.8×	58 1.5×	19	612
D. Schlenker Japan	13	489 0.8×	478 0.9×	153 0.5×	44 0.7×	36 0.9×	22	507

Countries citing papers authored by F. Höhnsdorf

Since Specialization

Citations

This map shows the geographic impact of F. Höhnsdorf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Höhnsdorf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Höhnsdorf more than expected).

Fields of papers citing papers by F. Höhnsdorf

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Höhnsdorf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Höhnsdorf. The network helps show where F. Höhnsdorf may publish in the future.

Co-authorship network of co-authors of F. Höhnsdorf

This figure shows the co-authorship network connecting the top 25 collaborators of F. Höhnsdorf. A scholar is included among the top collaborators of F. Höhnsdorf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Höhnsdorf. F. Höhnsdorf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Volz, Kerstin, et al.. (2009). MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors. Journal of Crystal Growth. 311(8). 2418–2426. 29 indexed citations

Höhnsdorf, F.. (2002). Herstellung und Untersuchung von (GaIn)(NAs)/GaAs-Halbleiterstrukturen. Publikationsserver (Universitat Marburg). 2 indexed citations

Hofmann, Martin R., Nils C. Gerhardt, C. Ellmers, et al.. (2002). Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers. IEEE Journal of Quantum Electronics. 38(2). 213–221. 34 indexed citations

Hofmann, Martin R., Anke Wagner, C. Ellmers, et al.. (2001). Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime. Applied Physics Letters. 78(20). 3009–3011. 53 indexed citations

Volz, Kerstin, et al.. (2000). TEM Investigations of (GaIn)(NAs)/GaAs Multi-Quantum Wells grown by MOVPE. Crystal Research and Technology. 35(6-7). 787–792. 3 indexed citations

Klar, Peter J., H. Grüning, W. Heimbrodt, et al.. (2000). From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy. Applied Physics Letters. 76(23). 3439–3441. 158 indexed citations

Volz, Kerstin, et al.. (2000). Structural Investigations of (GaIn)(NAs)/GaAs Multi-Quantum-Wells by Transmission Electron Microscopy. MRS Proceedings. 618. 5 indexed citations

Höhnsdorf, F., J. Koch, Kerstin Volz, et al.. (2000). Structural properties of (GaIn) (NAs)/GaAs MQW structures grown by MOVPE. Physica E Low-dimensional Systems and Nanostructures. 8(3). 205–209. 5 indexed citations

Koch, J., F. Höhnsdorf, & W. Stolz. (2000). Optical characterization of (GaIn)(NAs)/GaAs MQW structures. Journal of Electronic Materials. 29(1). 165–168. 5 indexed citations

10.

Wagner, Anke, C. Ellmers, F. Höhnsdorf, et al.. (2000). (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range. Applied Physics Letters. 76(3). 271–272. 44 indexed citations

11.

Ellmers, C., F. Höhnsdorf, J. Koch, et al.. (1999). Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime. Applied Physics Letters. 74(16). 2271–2273. 64 indexed citations

12.

Giannini, Cinzia, Elvio Carlino, L. Tapfer, et al.. (1999). Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE. MRS Proceedings. 595. 1 indexed citations

13.

Höhnsdorf, F., et al.. (1999). Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm. Electronics Letters. 35(7). 571–572. 127 indexed citations

14.

Höhnsdorf, F., J. Koch, Carsten Agert, & W. Stolz. (1998). Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy). Journal of Crystal Growth. 195(1-4). 391–396. 62 indexed citations

15.

Leu, S., et al.. (1998). C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs. Journal of Crystal Growth. 195(1-4). 98–104. 27 indexed citations

16.

Leu, S., et al.. (1998). Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane. Journal of Crystal Growth. 195(1-4). 91–97. 14 indexed citations

17.

Protzmann, H., F. Höhnsdorf, W. Stolz, et al.. (1997). Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors. Journal of Crystal Growth. 170(1-4). 155–160. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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