J. Bąk‐Misiuk

1.0k total citations
131 papers, 799 citations indexed

About

J. Bąk‐Misiuk is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Bąk‐Misiuk has authored 131 papers receiving a total of 799 indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 72 papers in Atomic and Molecular Physics, and Optics and 54 papers in Materials Chemistry. Recurrent topics in J. Bąk‐Misiuk's work include Silicon and Solar Cell Technologies (49 papers), Semiconductor materials and interfaces (43 papers) and Semiconductor Quantum Structures and Devices (36 papers). J. Bąk‐Misiuk is often cited by papers focused on Silicon and Solar Cell Technologies (49 papers), Semiconductor materials and interfaces (43 papers) and Semiconductor Quantum Structures and Devices (36 papers). J. Bąk‐Misiuk collaborates with scholars based in Poland, Russia and France. J. Bąk‐Misiuk's co-authors include J. Z. Domagała, A. Misiuk, M. Leszczyński, E. Dynowska, E. Janik, A. Shalimov, Z. R. Żytkiewicz, B. Surma, I. V. Antonova and T. Wójtowicz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Bąk‐Misiuk

122 papers receiving 783 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Bąk‐Misiuk Poland 15 508 455 370 154 144 131 799
A. Rocher France 17 532 1.0× 302 0.7× 603 1.6× 169 1.1× 152 1.1× 74 917
R. N. Kyutt Russia 13 337 0.7× 412 0.9× 280 0.8× 145 0.9× 276 1.9× 95 738
V. P. LaBella United States 19 560 1.1× 488 1.1× 874 2.4× 125 0.8× 145 1.0× 63 1.1k
H. Karl Germany 17 398 0.8× 526 1.2× 398 1.1× 207 1.3× 193 1.3× 68 929
A. Misiuk Poland 17 821 1.6× 734 1.6× 415 1.1× 101 0.7× 81 0.6× 244 1.1k
G. Lippold Germany 16 506 1.0× 480 1.1× 204 0.6× 78 0.5× 73 0.5× 43 690
S. Pöykkö Finland 15 518 1.0× 562 1.2× 296 0.8× 181 1.2× 59 0.4× 21 900
C. Bocchi Italy 17 526 1.0× 259 0.6× 697 1.9× 186 1.2× 79 0.5× 72 849
Tokuo Yodo Japan 17 466 0.9× 491 1.1× 345 0.9× 173 1.1× 198 1.4× 64 738
J. L. Farvacque France 15 354 0.7× 274 0.6× 325 0.9× 160 1.0× 309 2.1× 72 683

Countries citing papers authored by J. Bąk‐Misiuk

Since Specialization
Citations

This map shows the geographic impact of J. Bąk‐Misiuk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Bąk‐Misiuk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Bąk‐Misiuk more than expected).

Fields of papers citing papers by J. Bąk‐Misiuk

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Bąk‐Misiuk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Bąk‐Misiuk. The network helps show where J. Bąk‐Misiuk may publish in the future.

Co-authorship network of co-authors of J. Bąk‐Misiuk

This figure shows the co-authorship network connecting the top 25 collaborators of J. Bąk‐Misiuk. A scholar is included among the top collaborators of J. Bąk‐Misiuk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Bąk‐Misiuk. J. Bąk‐Misiuk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ławniczak‐Jabłońska, K., A. Wolska, Marcin T. Klepka, et al.. (2011). Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers. physica status solidi (b). 248(7). 1609–1614. 3 indexed citations
2.
Liliental‐Weber, Z., K. M. Yu, M. Hawkridge, et al.. (2009). Spontaneous stratification of InGaN layers and its influence on optical properties. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 12 indexed citations
3.
Liliental‐Weber, Z., K. M. Yu, M. Hawkridge, et al.. (2009). Structural perfection of InGaN layers and its relation to photoluminescence. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2626–2631. 15 indexed citations
4.
Wolska, A., J. Bąk‐Misiuk, E. Dynowska, et al.. (2009). Structural and magnetic properties of the molecular beam epitaxy grown MnSb layers on GaAs substrates. Journal of Applied Physics. 106(8). 10 indexed citations
5.
Misiuk, A., B. Surma, J. Bąk‐Misiuk, et al.. (2008). Defects in single-crystalline Ge-doped silicon revealed by annealing under high hydrostatic pressure. Acta Crystallographica Section A Foundations of Crystallography. 64(a1). C441–C441. 1 indexed citations
6.
Misiuk, A., J. Bąk‐Misiuk, B. Surma, et al.. (2006). Structure and magnetic properties of Si:Mn annealed under enhanced hydrostatic pressure. Journal of Alloys and Compounds. 423(1-2). 201–204. 16 indexed citations
7.
Muszalski, J., et al.. (2005). Deep centers in InGaAs/InP layers grown by molecular beam epitaxy. Optica Applicata. 35. 457–463. 6 indexed citations
8.
Shalimov, A., et al.. (2005). Strain state of InAlAs/InP layers subjected to high pressure treatment. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1948–1952. 2 indexed citations
9.
Misiuk, A., B. Surma, C. A. Londos, et al.. (2005). Oxygen precipitation and creation of defects in neutron irradiated Cz‐Si annealed under high pressure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1812–1816. 6 indexed citations
10.
Misiuk, A., et al.. (2005). Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz–Si:H, He. Journal of Alloys and Compounds. 401(1-2). 205–211. 2 indexed citations
11.
Misiuk, A., L. Bryja, J. Bąk‐Misiuk, et al.. (2002). Effect of high temperature - pressure on SOI structure. 5(3-4). 155–161. 2 indexed citations
12.
Kladko, V.P., et al.. (2001). Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method. Journal of Alloys and Compounds. 328(1-2). 218–221. 1 indexed citations
13.
Regiński, K., et al.. (2000). Wybrane problemy materiałowe w przemyśle elektronicznym: wpływ grubości warstwy epitaksjalnej InAs na podłożu GaAs na jej jakość krystaliczną i półprzewodnikową : miniaturyzacja w technologii krzemowej. Inżynieria Materiałowa. 137–141.
14.
Bąk‐Misiuk, J., et al.. (1999). RECIPROCAL LATTICE MAPPING OF INGAAS LAYERS GROWN ON INP(001) AND GAAS(001) SUBSTRATES. Opto-Electronics Review. 7(2). 107–112. 2 indexed citations
15.
Dynowska, E., E. Janik, J. Bąk‐Misiuk, et al.. (1999). Direct measurement of the lattice parameter of thick stable zinc-blende MgTe layer. Journal of Alloys and Compounds. 286(1-2). 276–278. 12 indexed citations
16.
Mycielski, A., A. Szadkowski, E. Łusakowska, et al.. (1999). Single crystals of ZnTe and (Cd,Zn)Te produced by physical vapor transport technique for MBE (substrates) and other applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3724. 10–10. 1 indexed citations
17.
Janik, E., E. Dynowska, J. Bąk‐Misiuk, et al.. (1998). Zinc-blende Mg1−xMnxTe — a new diluted magnetic semiconductor system. Journal of Crystal Growth. 184-185. 976–979. 2 indexed citations
18.
Pełka, J.B., J. Górecka, J. Auleytner, J. Z. Domagała, & J. Bąk‐Misiuk. (1997). Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods. Acta Physica Polonica A. 91(5). 905–910. 1 indexed citations
19.
Bąk‐Misiuk, J., et al.. (1988). Temperature dependence of the lattice constant in doped and nonstoichiometric GaAs, GaAs1−xPx, and GaP. physica status solidi (a). 106(2). 451–457. 12 indexed citations
20.
Pietsch, U., J. Bąk‐Misiuk, & V. Gottschalch. (1984). The linear thermal expansion coefficient of a GaxIn1-xAsyyP1y layer on in P:Sn substrate. physica status solidi (a). 82(2). K137–K140. 8 indexed citations

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