J. Bąk‐Misiuk

1.0k citations

131 papers · 799 indexed · h-index 15

Electrical and Electronic Engineering top 10%
Materials Chemistry top 10%
Atomic and Molecular Physics, and Optics top 10%
Electronic, Optical and Magnetic Materials
Condensed Matter Physics top 10%

Co-authors: J. Z. Domagała A. Misiuk M. Leszczyński E. Dynowska E. Janik A. Shalimov Z. R. Żytkiewicz B. Surma
Topics: Silicon and Solar Cell Technologies (49 papers)Semiconductor materials and interfaces (43 papers)Semiconductor Quantum Structures and Devices (36 papers)
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: Poland Russia France

In The Last Decade

J. Bąk‐Misiuk

122 papers receiving 783 citations

Peers

Countries citing papers authored by J. Bąk‐Misiuk

Since Specialization

Citations

This map shows the geographic impact of J. Bąk‐Misiuk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Bąk‐Misiuk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Bąk‐Misiuk more than expected).

Fields of papers citing papers by J. Bąk‐Misiuk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Bąk‐Misiuk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Bąk‐Misiuk. The network helps show where J. Bąk‐Misiuk may publish in the future.

Co-authorship network of co-authors of J. Bąk‐Misiuk

This figure shows the co-authorship network connecting the top 25 collaborators of J. Bąk‐Misiuk. A scholar is included among the top collaborators of J. Bąk‐Misiuk based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Bąk‐Misiuk. J. Bąk‐Misiuk is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Defect Structure of High-Temperature-Grown GaMnSb/GaSb 2010 ·Acta Physica Polonica A ·(unknown),J. Bąk‐Misiuk,E. Dynowska,J. Z. Domagała,J. Sadowski,Tomasz Wojciechowski,A. Barcz,R. Jakieła,W. Caliebe	6
2	Spontaneous stratification of InGaN layers and its influence on optical properties 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Z. Liliental‐Weber,K. M. Yu,M. Hawkridge,S. M. Bedair,Adam E. Berman,(unknown),J. Z. Domagała,J. Bąk‐Misiuk	12
3	Structural perfection of InGaN layers and its relation to photoluminescence 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Z. Liliental‐Weber,K. M. Yu,M. Hawkridge,S. M. Bedair,Adam E. Berman,(unknown),D. R. Khanal,Junqiao Wu,J. Z. Domagała,J. Bąk‐Misiuk	15
4	Defects in single-crystalline Ge-doped silicon revealed by annealing under high hydrostatic pressure 2008 ·Acta Crystallographica Section A Foundations of Crystallography ·A. Misiuk,B. Surma,(unknown),J. Bąk‐Misiuk,(unknown),W. Wierzchowski,K. Wieteska,N. V. Abrosimov,W. Graeff	1
5	Structure and magnetic properties of Si:Mn annealed under enhanced hydrostatic pressure 2006 ·Journal of Alloys and Compounds ·A. Misiuk,J. Bąk‐Misiuk,B. Surma,(unknown),M. Szot,T. Story,J. Jagielski	16
6	Deep centers in InGaAs/InP layers grown by molecular beam epitaxy 2005 ·Optica Applicata ·(unknown),(unknown),J. Muszalski,J. Kaniewski,J. Bąk‐Misiuk	6
7	Strain state of InAlAs/InP layers subjected to high pressure treatment 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Shalimov,J. Bąk‐Misiuk,J. Kaniewski,A. Misiuk,J. Z. Domagała,(unknown)	2
8	Effect of high temperature - pressure on SOI structure 2002 ·A. Misiuk,L. Bryja,J. Bąk‐Misiuk,J. Ratajczak,I. V. Antonova,V. P. Popov	2
9	Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method 2001 ·Journal of Alloys and Compounds ·V.P. Kladko,(unknown),Z. R. Żytkiewicz,J. Bąk‐Misiuk,(unknown)	1
10	Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen 2001 ·Computational Materials Science ·A. Misiuk,J. Bąk‐Misiuk,I. V. Antonova,V. Raineri,A. Romano‐Rodrı́guez,(unknown),(unknown),J. Ratajczak,J. Kątcki,(unknown),(unknown)	10
11	<title>Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures</title> 2001 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·I. V. Antonova,V. P. Popov,J. Bąk‐Misiuk,J. Z. Domagała,A. Misiuk,(unknown),А. К. Гутаковский,A. Romano‐Rodrı́guez	1
12	Wybrane problemy materiałowe w przemyśle elektronicznym: wpływ grubości warstwy epitaksjalnej InAs na podłożu GaAs na jej jakość krystaliczną i półprzewodnikową : miniaturyzacja w technologii krzemowej 2000 ·Inżynieria Materiałowa ·(unknown),(unknown),K. Regiński,J. Bąk‐Misiuk,(unknown)	0
13	Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001) 2000 ·Materials Science and Engineering B ·(unknown),(unknown),J. Kaniewski,J. Bąk‐Misiuk,K. Regiński	8
14	Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen 2000 ·Materials Science and Engineering B ·A. Misiuk,A. Barcz,J. Ratajczak,M. López,A. Romano‐Rodrı́guez,J. Bąk‐Misiuk,(unknown),J. Jun,I. V. Antonova,V. P. Popov	8
15	RECIPROCAL LATTICE MAPPING OF INGAAS LAYERS GROWN ON INP(001) AND GAAS(001) SUBSTRATES 1999 ·Opto-Electronics Review ·J. Bąk‐Misiuk,J. Kaniewski,J. Z. Domagała,K. Regiński,(unknown),(unknown)	2
16	Direct measurement of the lattice parameter of thick stable zinc-blende MgTe layer 1999 ·Journal of Alloys and Compounds ·E. Dynowska,E. Janik,J. Bąk‐Misiuk,J. Z. Domagała,T. Wójtowicz,J. Kossut	12
17	Single crystals of ZnTe and (Cd,Zn)Te produced by physical vapor transport technique for MBE (substrates) and other applications 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. Mycielski,A. Szadkowski,E. Łusakowska,L. Kowałczyk,J. Z. Domagała,J. Bąk‐Misiuk,B. Witkowska,(unknown),J. Rutkowski,(unknown)	1
18	Lattice dilation by free electrons in heavily doped GaAs:Si 1995 ·Applied Physics Letters ·M. Leszczyński,J. Bąk‐Misiuk,J. Z. Domagała,J. Muszalski,M. Kaniewska,J. Marczewski	28
19	Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature 1993 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·A. Misiuk,(unknown),J. Bąk‐Misiuk,(unknown)	2
20	The linear thermal expansion coefficient of a GaxIn1-xAsyyP1y layer on in P:Sn substrate 1984 ·physica status solidi (a) ·U. Pietsch,J. Bąk‐Misiuk,V. Gottschalch	8

About J. Bąk‐Misiuk

J. Bąk‐Misiuk is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 131 papers that have together received 799 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (49 papers), Semiconductor materials and interfaces (43 papers) and Semiconductor Quantum Structures and Devices (36 papers). The work is most often cited by research in Condensed Matter Physics (144 citations), Atomic and Molecular Physics, and Optics (370 citations) and Materials Chemistry (455 citations). J. Bąk‐Misiuk has collaborated with scholars based in Poland, Russia and France. Frequent co-authors include J. Z. Domagała, A. Misiuk, M. Leszczyński, E. Dynowska, E. Janik, A. Shalimov, Z. R. Żytkiewicz, B. Surma, I. V. Antonova and T. Wójtowicz. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

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