I.C. Chen

868 total citations
8 papers, 710 citations indexed

About

I.C. Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Infectious Diseases. According to data from OpenAlex, I.C. Chen has authored 8 papers receiving a total of 710 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 2 papers in Materials Chemistry and 0 papers in Infectious Diseases. Recurrent topics in I.C. Chen's work include Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Radiation Effects in Electronics (2 papers). I.C. Chen is often cited by papers focused on Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Radiation Effects in Electronics (2 papers). I.C. Chen collaborates with scholars based in United States and Italy. I.C. Chen's co-authors include Chenming Hu, S. Holland, P.K. Ko, J. Chen, T.Y. Chan, T.P. Ma and Chenming Hu and has published in prestigious journals such as IEEE Electron Device Letters.

In The Last Decade

I.C. Chen

8 papers receiving 665 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I.C. Chen United States	8	696	125	61	44	27	8	710
F. Monsieur France	12	906 1.3×	113 0.9×	51 0.8×	67 1.5×	42 1.6×	56	936
Jeff J. Peterson United States	16	629 0.9×	145 1.2×	34 0.6×	42 1.0×	18 0.7×	35	660
Ben Kaczer Belgium	11	913 1.3×	102 0.8×	37 0.6×	53 1.2×	22 0.8×	25	938
L.R. Hite United States	10	488 0.7×	86 0.7×	16 0.3×	35 0.8×	36 1.3×	20	507
Chung Len Lee Taiwan	13	522 0.8×	163 1.3×	48 0.8×	98 2.2×	38 1.4×	75	557
A. Chou United States	11	657 0.9×	114 0.9×	24 0.4×	80 1.8×	71 2.6×	24	684
Toshihiro Sekigawa Japan	9	339 0.5×	46 0.4×	31 0.5×	34 0.8×	40 1.5×	48	353
M. Togo Japan	14	599 0.9×	66 0.5×	24 0.4×	62 1.4×	69 2.6×	68	619
C. D’Emic United States	11	605 0.9×	197 1.6×	39 0.6×	115 2.6×	49 1.8×	15	630
J. Yugami Japan	13	452 0.6×	72 0.6×	28 0.5×	56 1.3×	44 1.6×	64	487

Countries citing papers authored by I.C. Chen

Since Specialization

Citations

This map shows the geographic impact of I.C. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I.C. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I.C. Chen more than expected).

Fields of papers citing papers by I.C. Chen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I.C. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I.C. Chen. The network helps show where I.C. Chen may publish in the future.

Co-authorship network of co-authors of I.C. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of I.C. Chen. A scholar is included among the top collaborators of I.C. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I.C. Chen. I.C. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

8 of 8 papers shown

1.

Chen, J., T.Y. Chan, I.C. Chen, P.K. Ko, & Chenming Hu. (1987). Subbreakdown drain leakage current in MOSFET. IEEE Electron Device Letters. 8(11). 515–517. 232 indexed citations

2.

Holland, S., I.C. Chen, & Chenming Hu. (1987). Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n⁺and p⁺polysilicon gates. IEEE Electron Device Letters. 8(12). 572–575. 19 indexed citations

3.

Chen, I.C. & Chenming Hu. (1987). Accelerated testing of time-dependent breakdown of SiO₂. IEEE Electron Device Letters. 8(4). 140–142. 53 indexed citations

4.

Chen, I.C., S. Holland, & Chenming Hu. (1986). Hole trapping and breakdown in thin SiO₂. IEEE Electron Device Letters. 7(3). 164–167. 113 indexed citations

5.

Chen, I.C., et al.. (1986). Dynamic stressing of thin oxides. 664–667. 47 indexed citations

6.

Chen, I.C., S. Holland, & Chenming Hu. (1986). Oxide breakdown dependence on thickness and hole current - enhanced reliability of ultra thin oxides. 660–663. 54 indexed citations

7.

Chen, I.C., et al.. (1985). A quantitative physical model for time-dependent breakdown in SiO2. 24–31. 110 indexed citations

8.

Holland, S., I.C. Chen, T.P. Ma, & Chenming Hu. (1984). On physical models for gate oxide breakdown. IEEE Electron Device Letters. 5(8). 302–305. 82 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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