T.Y. Chan

2.3k citations

37 papers · 1.7k indexed · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Low-power high-performance VLSI design
- Electrostatic Discharge in Electronics
Atomic and Molecular Physics, and Optics

Papers in

Electrical and Electronic Engineering 37
- Semiconductor materials and devices 36
- Advancements in Semiconductor Devices and Circuit Design 35
- Integrated Circuits and Semiconductor Failure Analysis 15
- Silicon Carbide Semiconductor Technologies 8
- Electrostatic Discharge in Electronics 2
- Ferroelectric and Negative Capacitance Devices 2
- Advanced Memory and Neural Computing 2
Atomic and Molecular Physics, and Optics 3
- Semiconductor materials and interfaces 2

Co-authors: Chenming Hu P.K. KoJ. ChenC. Hu M.-C. Jeng A.T. Wu Yuhua Cheng Jiawei Huang
Journals: IEEE Electron Device Letters (14 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (1 paper)Solid-State Electronics (1 paper)Reliability physics (1 paper)
Partner nations: United States Italy Hong Kong

In The Last Decade

T.Y. Chan

36 papers receiving 1.6k citations

Hit Papers

align trajectories log scale

Threshold voltage model for deep-submicrometer MOSFETs 1993 · 361 citations

Peers

Countries citing papers authored by T.Y. Chan

Since Specialization

Citations

This map shows the geographic impact of T.Y. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.Y. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.Y. Chan more than expected).

Fields of papers citing papers by T.Y. Chan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.Y. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.Y. Chan. The network helps show where T.Y. Chan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T.Y. Chan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T.Y. Chan Line = papers co-authored together T.Y. Chan links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Performance and hot-carrier reliability of deep-submicrometer CMOS T.Y. Chan, 良子村上	2003	0
2	The effect of channel hot carrier stressing on gate oxide integrity in MOSFET Wei Zhao, J.-Y. Choi, T.Y. Chan, T.C. Ong, C. Hu	2003	8
3	New insight into hot-electron-induced degradation of n-MOSFETs T.Y. Chan, Chien Chiang, 良子村上	2003	7
4	On resistance-leakage current trade-off in low-voltage power PMOSFETs M. Darwish, Intan Salsabila, M.S. Shekar, T.Y. Chan	2002	1
5	Time dependence of fully-depleted SOI MOSFETs subthreshold current S. O., Earl F. Bloch, R. Solomon, T.Y. Chan, P.K. Ko, Chenming Hu	2002	1
6	Hot electron gate current and degradation in P-channel SOI MOSFETs Hussein H. Ghoz, K.N. Quader, R. Solomon, T.Y. Chan, P.K. Ko, C. Hu	2002	2
7	Noise overshoot at drain current kink in SOI MOSFET Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·F. D. Hess, Peng Fang, P.K. Ko, Morena Emilia Alvarenga Gómez, R. Solomon, T.Y. Chan, C.G. Sodini	2002	8
8	HOT ELECTRON GATE CURRENT &VD DEGRADATION P-CHANNEL SOI MOSFET'S Hussein H. Ghoz, K.N. Quader, R. Solomon, T.Y. Chan, M Thomson, C. Hu	1991	2
9	A CV technique for measuring thin SOI film thickness IEEE Electron Device Letters ·Isamu Ohnishi, R. Solomon, T.Y. Chan, P.K. Ko, Chenming Hu	1991	54
10	A closed-loop evaluation and validation of a method for determining the scattering limited carrier velocity in MOSFETs IEEE Transactions on Electron Devices ·Sinan JING, T.Y. Chan	1990	5
11	Nitridation-induced surface donor layer in silicon Applied Physics Letters ·A.T. Wu, V. Murali, Brent Lowe, Deki Deki, B. B. Triplett, T.Y. Chan	1989	8
12	A true single-transistor oxide-nitride-oxide EEPROM device IEEE Electron Device Letters ·T.Y. Chan, K.K. Young, Chenming Hu	1987	70
13	Subbreakdown drain leakage current in MOSFET IEEE Electron Device Letters ·J. Chen, T.Y. Chan, I.C. Chen, P.K. Ko, Chenming Hu	1987	232
14	Performance and hot-electron reliability of deep-submicron MOSFET's Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·M.-C. Jeng, J.E. Chung, A.T. Wu, T.Y. Chan, J.E. Moon, Seokjun Ahn, P.K. Ko, Chenming Hu	1987	11
15	The impact of gate-induced drain leakage current on MOSFET scaling Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·T.Y. Chan, J. Chen, P.K. Ko, C. Hu	1987	268
16	An Analytical Perspective of LDD MOSFETs Symposium on VLSI Technology ·Kartikeya Mayaram, Sung Min Hong, T.Y. Chan, Chenming Hu	1986	4
17	Hole Trapping and Hot-Carrier Induced Device Instability in Thin Nitride/Oxide IGFETs Symposium on VLSI Technology ·K.K. Young, T.Y. Chan, Chenming Hu, W.G. Oldham	1986	3
18	The effects of weak gate-to-drain(source) overlap on MOSFET characteristics Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·P.K. Ko, T.Y. Chan, A.T. Wu, Chenming Hu	1986	26
19	Asymmetrical characteristics in LDD and minimum-overlap MOSFET's IEEE Electron Device Letters ·T.Y. Chan, A.T. Wu, P.K. Ko, Chenming Hu, R. R. Razouk	1986	46
20	A simple method to characterize substrate current in MOSFET's IEEE Electron Device Letters ·T.Y. Chan, P.K. Ko, Chenming Hu	1984	143

About T.Y. Chan

T.Y. Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Computational Mechanics and Materials Chemistry, having authored 37 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and interfaces (2 papers), Electrostatic Discharge in Electronics (2 papers), Ferroelectric and Negative Capacitance Devices (2 papers) and Advanced Memory and Neural Computing (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (108 citations), Hardware and Architecture (18 citations), Biomedical Engineering (115 citations) and Instrumentation (8 citations). T.Y. Chan has collaborated with scholars based in United States, Italy and Hong Kong. Frequent co-authors include Chenming Hu, P.K. Ko, J. Chen, P.K. Ko, C. Hu, M.-C. Jeng, A.T. Wu, Yuhua Cheng, Jiawei Huang and I.C. Chen. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Solid-State Electronics and Reliability physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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