T.Y. Chan

2.3k total citations · 1 hit paper
37 papers, 1.7k citations indexed

About

T.Y. Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T.Y. Chan has authored 37 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Materials Chemistry. Recurrent topics in T.Y. Chan's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). T.Y. Chan is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). T.Y. Chan collaborates with scholars based in United States, Italy and Hong Kong. T.Y. Chan's co-authors include Chenming Hu, P.K. Ko, J. Chen, P.K. Ko, C. Hu, M.-C. Jeng, A.T. Wu, Yuhua Cheng, Jiawei Huang and I.C. Chen and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

T.Y. Chan

36 papers receiving 1.6k citations

Hit Papers

Threshold voltage model for deep-submicrometer MOSFETs 1993 2026 2004 2015 1993 100 200 300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Threshold voltage model for deep-submicrometer MOSFETs
    1993 361 citations Chenming Hu, T.Y. Chan et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.Y. Chan United States 16 1.7k 115 108 93 40 37 1.7k
Zhiping Yu China 16 861 0.5× 173 1.5× 108 1.0× 63 0.7× 10 0.3× 44 901
Tahui Wang Taiwan 18 1.0k 0.6× 43 0.4× 87 0.8× 161 1.7× 116 2.9× 121 1.1k
D. Kossives United States 12 616 0.4× 60 0.5× 148 1.4× 29 0.3× 41 1.0× 25 627
T. Horiuchi Japan 12 764 0.5× 66 0.6× 79 0.7× 52 0.6× 22 0.6× 51 820
Ping-Keung Ko United States 10 1.9k 1.2× 79 0.7× 102 0.9× 89 1.0× 26 0.7× 13 2.0k
P. Packan United States 18 1.0k 0.6× 101 0.9× 163 1.5× 184 2.0× 12 0.3× 32 1.1k
K.E. Ismail United States 7 679 0.4× 92 0.8× 167 1.5× 59 0.6× 14 0.3× 9 717
F. Arnaud France 14 801 0.5× 101 0.9× 111 1.0× 131 1.4× 11 0.3× 63 838
H.-J. Wann United States 10 863 0.5× 93 0.8× 105 1.0× 89 1.0× 15 0.4× 18 885
B. Davari United States 18 1.3k 0.8× 199 1.7× 197 1.8× 63 0.7× 38 0.9× 67 1.3k

Countries citing papers authored by T.Y. Chan

Since Specialization
Citations

This map shows the geographic impact of T.Y. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.Y. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.Y. Chan more than expected).

Fields of papers citing papers by T.Y. Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.Y. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.Y. Chan. The network helps show where T.Y. Chan may publish in the future.

Co-authorship network of co-authors of T.Y. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of T.Y. Chan. A scholar is included among the top collaborators of T.Y. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.Y. Chan. T.Y. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chan, T.Y., et al.. (2003). Performance and hot-carrier reliability of deep-submicrometer CMOS. ed 31. 71–74.
2.
Choi, J.-Y., et al.. (2003). The effect of channel hot carrier stressing on gate oxide integrity in MOSFET. ed 32. 1–7. 8 indexed citations
3.
Chan, T.Y., et al.. (2003). New insight into hot-electron-induced degradation of n-MOSFETs. ed 31. 196–199. 7 indexed citations
4.
Darwish, M., et al.. (2002). On resistance-leakage current trade-off in low-voltage power PMOSFETs. 261–266. 1 indexed citations
5.
Solomon, R., et al.. (2002). Time dependence of fully-depleted SOI MOSFETs subthreshold current. 32–33. 1 indexed citations
6.
Quader, K.N., et al.. (2002). Hot electron gate current and degradation in P-channel SOI MOSFETs. 34. 8–9. 2 indexed citations
7.
Fang, Peng, et al.. (2002). Noise overshoot at drain current kink in SOI MOSFET. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 40–41. 8 indexed citations
8.
Quader, K.N., et al.. (1991). HOT ELECTRON GATE CURRENT &VD DEGRADATION P-CHANNEL SOI MOSFET'S. 2 indexed citations
9.
Solomon, R., et al.. (1991). A CV technique for measuring thin SOI film thickness. IEEE Electron Device Letters. 12(8). 453–455. 54 indexed citations
10.
Chan, T.Y., et al.. (1990). A closed-loop evaluation and validation of a method for determining the scattering limited carrier velocity in MOSFETs. IEEE Transactions on Electron Devices. 37(11). 2388–2394. 5 indexed citations
11.
Wu, A.T., et al.. (1989). Nitridation-induced surface donor layer in silicon. Applied Physics Letters. 55(16). 1665–1667. 8 indexed citations
12.
Chan, T.Y., K.K. Young, & Chenming Hu. (1987). A true single-transistor oxide-nitride-oxide EEPROM device. IEEE Electron Device Letters. 8(3). 93–95. 70 indexed citations
13.
Chen, J., T.Y. Chan, I.C. Chen, P.K. Ko, & Chenming Hu. (1987). Subbreakdown drain leakage current in MOSFET. IEEE Electron Device Letters. 8(11). 515–517. 232 indexed citations
14.
Jeng, M.-C., J.E. Chung, A.T. Wu, et al.. (1987). Performance and hot-electron reliability of deep-submicron MOSFET's. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 710–713. 11 indexed citations
15.
Chan, T.Y., J. Chen, P.K. Ko, & C. Hu. (1987). The impact of gate-induced drain leakage current on MOSFET scaling. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 718–721. 268 indexed citations
16.
Mayaram, Kartikeya, et al.. (1986). An Analytical Perspective of LDD MOSFETs. Symposium on VLSI Technology. 61–62. 4 indexed citations
17.
Young, K.K., T.Y. Chan, Chenming Hu, & W.G. Oldham. (1986). Hole Trapping and Hot-Carrier Induced Device Instability in Thin Nitride/Oxide IGFETs. Symposium on VLSI Technology. 65–66. 3 indexed citations
18.
Ko, P.K., T.Y. Chan, A.T. Wu, & Chenming Hu. (1986). The effects of weak gate-to-drain(source) overlap on MOSFET characteristics. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 292–295. 26 indexed citations
19.
Chan, T.Y., A.T. Wu, P.K. Ko, Chenming Hu, & R. R. Razouk. (1986). Asymmetrical characteristics in LDD and minimum-overlap MOSFET's. IEEE Electron Device Letters. 7(1). 16–19. 46 indexed citations
20.
Chan, T.Y., P.K. Ko, & Chenming Hu. (1984). A simple method to characterize substrate current in MOSFET's. IEEE Electron Device Letters. 5(12). 505–507. 143 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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