Hisao Hashimoto

861 total citations
47 papers, 657 citations indexed

About

Hisao Hashimoto is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hisao Hashimoto has authored 47 papers receiving a total of 657 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 26 papers in Computational Mechanics and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hisao Hashimoto's work include Ion-surface interactions and analysis (25 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers) and Semiconductor materials and devices (17 papers). Hisao Hashimoto is often cited by papers focused on Ion-surface interactions and analysis (25 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers) and Semiconductor materials and devices (17 papers). Hisao Hashimoto collaborates with scholars based in Japan and United States. Hisao Hashimoto's co-authors include Eizo Miyauchi, Akira Takamori, Hiroshi Arimoto, S. Hiyamizu, Kazuo Nanbu, Takashi Mimura, Tetsuo Morita, Toshio Fujii, Takao Utsumi and Kiyoshi Asakawa and has published in prestigious journals such as Journal of The Electrochemical Society, Japanese Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

Hisao Hashimoto

44 papers receiving 516 citations

Peers

Hisao Hashimoto

EEE

AMPO

SCF

F. Cembali Italy

Y. Takeishi Japan

A.B. Krasilnikov Russia

G. A. Lincoln United States

Ezra Bussmann United States

M. Tabe Japan

Takahisa Doi Japan

M. Taneya Japan

Jiro Ōsaka Japan

William A. Friday United States

F. Cembali Italy

Hisao Hashimoto

495 ×0.9

EEE

312 ×1.0

AMPO

167 ×0.7

43 ×0.3

SCF

126 ×1.3

Citations per year, relative to Hisao Hashimoto Hisao Hashimoto (= 1×) peers F. Cembali

Countries citing papers authored by Hisao Hashimoto

Since Specialization

Citations

This map shows the geographic impact of Hisao Hashimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hisao Hashimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hisao Hashimoto more than expected).

Fields of papers citing papers by Hisao Hashimoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hisao Hashimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hisao Hashimoto. The network helps show where Hisao Hashimoto may publish in the future.

Co-authorship network of co-authors of Hisao Hashimoto

This figure shows the co-authorship network connecting the top 25 collaborators of Hisao Hashimoto. A scholar is included among the top collaborators of Hisao Hashimoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hisao Hashimoto. Hisao Hashimoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Arimoto, Hiroshi, Eizo Miyauchi, & Hisao Hashimoto. (1987). Zn and Si Ion Emission from Au-Zn-Si LM Ion Source. Japanese Journal of Applied Physics. 26(4A). L253–L253. 3 indexed citations

Ishida, Kōji, Eizo Miyauchi, Tetsuo Morita, et al.. (1987). Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation. Japanese Journal of Applied Physics. 26(4A). L285–L285. 11 indexed citations

Morita, Tetsuo, Akira Takamori, Hiroshi Arimoto, Eizo Miyauchi, & Hisao Hashimoto. (1987). Alignment Signal from a Mark Deformed by Molecular Beam Epitaxial Overgrowth for Focused Ion Beam Implantation. Japanese Journal of Applied Physics. 26(4A). L234–L234. 3 indexed citations

Morita, Tetsuo, Hiroshi Arimoto, Eizo Miyauchi, & Hisao Hashimoto. (1987). Alignment Accuracy of Focused Ion Beam Implantation. Japanese Journal of Applied Physics. 26(6R). 955–955. 2 indexed citations

Furuya, Akira, Osamu Wada, Akira Takamori, & Hisao Hashimoto. (1987). Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well. Japanese Journal of Applied Physics. 26(6A). L926–L926. 28 indexed citations

Miyauchi, Eizo & Hisao Hashimoto. (1986). Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three-dimensional pattern doping crystal growth. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 933–938. 13 indexed citations

Morita, Tetsuo, et al.. (1986). Geometrical design of an alignment mark for maskless ion implantation in GaAs. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 829–832. 6 indexed citations

Takamori, Akira, et al.. (1986). Optical properties of pattern-doped GaAs/AlGaAs grown by an MBE system equipped with a focused ion beam implanter. 1 indexed citations

Takamori, Akira, et al.. (1985). Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide. Japanese Journal of Applied Physics. 24(6A). L414–L414. 26 indexed citations

10.

Miyauchi, Eizo, et al.. (1985). Computor control of maskless ion implanter with AuSiBe LM ion source for III–V compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 6(1-2). 183–189. 9 indexed citations

11.

Arimoto, Hiroshi, Eizo Miyauchi, & Hisao Hashimoto. (1985). Emission Characteristics of Au-Si-Be LM Ion Source. Japanese Journal of Applied Physics. 24(5A). L288–L288. 8 indexed citations

12.

Miyauchi, Eizo, et al.. (1985). Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs. Japanese Journal of Applied Physics. 24(1A). L6–L6. 10 indexed citations

13.

Miyauchi, Eizo, et al.. (1984). Reduced Damage Generation in GaAs Implanted with Focused Be Ions. Japanese Journal of Applied Physics. 23(7A). L515–L515. 20 indexed citations

14.

Arimoto, Hiroshi, Akira Takamori, Eizo Miyauchi, & Hisao Hashimoto. (1984). Pd–Ni–Si–Be–B Liquid Metal Ion Source for Maskless Ion Implantation. Japanese Journal of Applied Physics. 23(3A). L165–L165. 11 indexed citations

15.

Hashimoto, Hisao & Eizo Miyauchi. (1984). Focused Ion Implantation for Optoelectronic Integrated Circuits. 5 indexed citations

16.

Miyauchi, Eizo, et al.. (1983). A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors. Japanese Journal of Applied Physics. 22(5A). L287–L287. 20 indexed citations

17.

Miyauchi, Eizo, et al.. (1983). Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System. Japanese Journal of Applied Physics. 22(7A). L423–L423. 16 indexed citations

18.

Takamori, Akira, et al.. (1983). GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers. Japanese Journal of Applied Physics. 22(8A). L520–L520. 3 indexed citations

19.

Nishi, H., et al.. (1981). (Invited) Ion Implantation into a Cr-Doped Semi-Insulating GaAs Substrate. Japanese Journal of Applied Physics. 20(S1). 223–223. 1 indexed citations

20.

Hiyamizu, S., Toshio Fujii, Takashi Mimura, et al.. (1981). The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE. Japanese Journal of Applied Physics. 20(6). L455–L455. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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