A.B. Krasilnikov

997 total citations
21 papers, 823 citations indexed

About

A.B. Krasilnikov is a scholar working on Atomic and Molecular Physics, and Optics, Atmospheric Science and Biomedical Engineering. According to data from OpenAlex, A.B. Krasilnikov has authored 21 papers receiving a total of 823 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 6 papers in Atmospheric Science and 6 papers in Biomedical Engineering. Recurrent topics in A.B. Krasilnikov's work include Surface and Thin Film Phenomena (16 papers), Force Microscopy Techniques and Applications (14 papers) and nanoparticles nucleation surface interactions (6 papers). A.B. Krasilnikov is often cited by papers focused on Surface and Thin Film Phenomena (16 papers), Force Microscopy Techniques and Applications (14 papers) and nanoparticles nucleation surface interactions (6 papers). A.B. Krasilnikov collaborates with scholars based in Russia. A.B. Krasilnikov's co-authors include А. В. Латышев, A. L. Aseev, S. I. Stenin, Л. В. Соколов and L. V. Litvin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Surface Science and Surface Science.

In The Last Decade

A.B. Krasilnikov

20 papers receiving 796 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.B. Krasilnikov Russia	11	653	203	200	173	171	21	823
Y.-N. Yang United States	16	677 1.0×	194 1.0×	256 1.3×	139 0.8×	131 0.8×	31	827
J. Zhang United Kingdom	15	540 0.8×	248 1.2×	373 1.9×	167 1.0×	125 0.7×	35	789
T. Shitara United Kingdom	14	686 1.1×	260 1.3×	427 2.1×	199 1.2×	155 0.9×	25	877
J.M. Bermond France	10	300 0.5×	178 0.9×	101 0.5×	159 0.9×	90 0.5×	18	488
Silva K. Theiss United States	9	517 0.8×	154 0.8×	383 1.9×	56 0.3×	112 0.7×	20	700
J. L. Goldberg United States	7	422 0.6×	106 0.5×	93 0.5×	132 0.8×	77 0.5×	14	526
Gregory J. Whaley United States	7	302 0.5×	128 0.6×	215 1.1×	76 0.4×	52 0.3×	11	441
Takahisa Doi Japan	14	336 0.5×	88 0.4×	136 0.7×	51 0.3×	93 0.5×	29	464
J. Jersch Germany	14	501 0.8×	98 0.5×	302 1.5×	35 0.2×	422 2.5×	32	747
V. Bressler-Hill United States	13	569 0.9×	158 0.8×	343 1.7×	48 0.3×	99 0.6×	25	617

Countries citing papers authored by A.B. Krasilnikov

Since Specialization

Citations

This map shows the geographic impact of A.B. Krasilnikov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.B. Krasilnikov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.B. Krasilnikov more than expected).

Fields of papers citing papers by A.B. Krasilnikov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.B. Krasilnikov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.B. Krasilnikov. The network helps show where A.B. Krasilnikov may publish in the future.

Co-authorship network of co-authors of A.B. Krasilnikov

This figure shows the co-authorship network connecting the top 25 collaborators of A.B. Krasilnikov. A scholar is included among the top collaborators of A.B. Krasilnikov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.B. Krasilnikov. A.B. Krasilnikov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1997). UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth. Thin Solid Films. 306(2). 205–213. 8 indexed citations

2.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1996). Self-diffusion on Si(111) surfaces. Physical review. B, Condensed matter. 54(4). 2586–2589. 23 indexed citations

3.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1996). In situ reflection electron microscope observation of two-dimensional nucleation on Si(111) during epitaxial growth. Thin Solid Films. 281-282. 20–23. 7 indexed citations

4.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1994). Direct UHV REM observation of the behaviour of monatomic steps on the silicon (111) surface. physica status solidi (a). 146(1). 251–257. 11 indexed citations

5.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1994). UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current. Surface Science. 311(3). 395–403. 42 indexed citations

6.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1993). In situ REM study of monatomic step behaviour on Si(111) surface during sublimation. Ultramicroscopy. 48(4). 377–380. 14 indexed citations

7.

Krasilnikov, A.B., А. В. Латышев, & A. L. Aseev. (1993). Transformation of a Si(111) stepped surface during the formation of a Si(3 × 1)Ca superstructure. Surface Science. 290(3). 232–238. 8 indexed citations

8.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1992). Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions. Microscopy Research and Technique. 20(4). 341–351. 25 indexed citations

9.

Krasilnikov, A.B., et al.. (1992). Monoatomic step clustering during superstructural transitions on Si(111) surface. Journal of Crystal Growth. 116(1-2). 178–184. 9 indexed citations

10.

Латышев, А. В., A.B. Krasilnikov, & A. L. Aseev. (1992). Direct REM observation of structural processes on clean silicon surfaces during sublimation, phase transition and epitaxy. Applied Surface Science. 60-61. 397–404. 9 indexed citations

11.

Латышев, А. В., A.B. Krasilnikov, A. L. Aseev, Л. В. Соколов, & S. I. Stenin. (1991). Reflection electron microscopy study of clean Si(111) surface reconstruction during the (7 × 7) ς (1 × 1) phase transition. Surface Science. 254(1-3). 90–96. 62 indexed citations

12.

Litvin, L. V., A.B. Krasilnikov, & А. В. Латышев. (1991). Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current. Surface Science Letters. 244(3). L121–L124. 3 indexed citations

13.

Латышев, А. В., A.B. Krasilnikov, A. L. Aseev, Л. В. Соколов, & S. I. Stenin. (1991). Reflection electron microscopy study of clean Si(111) surface reconstruction during the (7 × 7) ⇔ (1 × 1) phase transition. Surface Science Letters. 254(1-3). A476–A476. 41 indexed citations

14.

Litvin, L. V., A.B. Krasilnikov, & А. В. Латышев. (1991). Transformations of the stepped Si(001) surface structure induced by heating the specimen by a current. Surface Science. 244(3). L121–L124. 39 indexed citations

15.

Латышев, А. В. & A.B. Krasilnikov. (1991). In Situ REM Study of Silicon Surface during MBE Processes. Materials science forum. 69. 159–162. 1 indexed citations

16.

Aseev, A. L., А. В. Латышев, & A.B. Krasilnikov. (1991). Direct observation of monoatomic step behaviour in MBE on Si by reflection electron microscopy. Journal of Crystal Growth. 115(1-4). 393–397. 7 indexed citations

17.

Латышев, А. В., A. L. Aseev, A.B. Krasilnikov, & S. I. Stenin. (1990). Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy. Surface Science. 227(1-2). 24–34. 105 indexed citations

18.

Латышев, А. В., A. L. Aseev, A.B. Krasilnikov, & S. I. Stenin. (1989). Transformations on clean Si(111) stepped surface during sublimation. Surface Science. 213(1). 157–169. 368 indexed citations

19.

Латышев, А. В., A. L. Aseev, A.B. Krasilnikov, & S. I. Stenin. (1989). Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy. physica status solidi (a). 113(2). 421–430. 33 indexed citations

20.

Латышев, А. В., A.B. Krasilnikov, A. L. Aseev, & S. I. Stenin. (1988). Effect of electric current on the ratio of the areas of the (2X1) and (1X2) domains at the clean (001) surface of silicon during sublimation. ZhETF Pisma Redaktsiiu. 48. 484.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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