F. Cembali

887 total citations
38 papers, 613 citations indexed

About

F. Cembali is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Cembali has authored 38 papers receiving a total of 613 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 14 papers in Computational Mechanics and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Cembali's work include Silicon and Solar Cell Technologies (25 papers), Ion-surface interactions and analysis (14 papers) and Semiconductor materials and interfaces (12 papers). F. Cembali is often cited by papers focused on Silicon and Solar Cell Technologies (25 papers), Ion-surface interactions and analysis (14 papers) and Semiconductor materials and interfaces (12 papers). F. Cembali collaborates with scholars based in Italy, United States and Belgium. F. Cembali's co-authors include M. Servidori, S. Solmi, Alessandro Zani, R. Angelucci, U. J. Winter, P. Zaumseil, Rita Fabbri, F. Zignani, P. Negrini and M. Anderle and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Cembali

35 papers receiving 508 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Cembali Italy 15 495 312 167 126 56 38 613
K.G. Stephens United Kingdom 15 627 1.3× 275 0.9× 304 1.8× 172 1.4× 39 0.7× 66 743
J. W. Cleland United States 14 511 1.0× 314 1.0× 172 1.0× 153 1.2× 34 0.6× 35 649
C. Ascheron Germany 14 383 0.8× 186 0.6× 278 1.7× 207 1.6× 35 0.6× 46 586
A. O. Evwaraye United States 18 881 1.8× 403 1.3× 83 0.5× 143 1.1× 18 0.3× 54 937
P. D. Augustus United Kingdom 14 315 0.6× 273 0.9× 56 0.3× 135 1.1× 36 0.6× 27 450
C. G. Tuppen United Kingdom 15 612 1.2× 506 1.6× 85 0.5× 247 2.0× 92 1.6× 42 785
J. P. Gailliard France 12 442 0.9× 305 1.0× 159 1.0× 168 1.3× 40 0.7× 25 540
Seigô Kishino Japan 16 503 1.0× 251 0.8× 50 0.3× 266 2.1× 90 1.6× 42 691
M. A. G. Halliwell United Kingdom 13 397 0.8× 453 1.5× 54 0.3× 238 1.9× 58 1.0× 32 648
A. Gerhardt Germany 12 361 0.7× 234 0.8× 76 0.5× 176 1.4× 47 0.8× 27 462

Countries citing papers authored by F. Cembali

Since Specialization
Citations

This map shows the geographic impact of F. Cembali's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Cembali with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Cembali more than expected).

Fields of papers citing papers by F. Cembali

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Cembali. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Cembali. The network helps show where F. Cembali may publish in the future.

Co-authorship network of co-authors of F. Cembali

This figure shows the co-authorship network connecting the top 25 collaborators of F. Cembali. A scholar is included among the top collaborators of F. Cembali based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Cembali. F. Cembali is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Servidori, M., F. Cembali, & Silvia Milita. (2001). マルチ結晶Bragg構成シンクロトロントポグラフィーの3D DuMondダイアグラム II 湾曲試料. Applied Physics A. 73(1). 83–90. 1 indexed citations
2.
Fabbri, Rita, F. Cembali, M. Servidori, & Alessandro Zani. (1993). Analysis of thin-film solid solutions on single-crystal silicon by simulation of x-ray rocking curves: B-Si and Ge-Si binary alloys. Journal of Applied Physics. 74(4). 2359–2369. 10 indexed citations
3.
Servidori, M., F. Cembali, Rita Fabbri, & Alessandro Zani. (1992). Influence of first-order approximations in the incidence parameter on the simulation of symmetric and asymmetric X-ray rocking curves of heteroepitactic structures. Journal of Applied Crystallography. 25(1). 46–51. 27 indexed citations
4.
Armigliato, A., M. Servidori, F. Cembali, et al.. (1992). Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry. Microscopy Microanalysis Microstructures. 3(4). 363–384. 22 indexed citations
5.
Solmi, S., F. Cembali, Rita Fabbri, M. Servidori, & R. Canteri. (1989). Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation. Applied Physics A. 48(3). 255–260. 23 indexed citations
6.
Cembali, F. & M. Servidori. (1989). Stress distribution and lattice curvature determinations in multilayer structures by simulation of X-ray rocking curves. Journal of Applied Crystallography. 22(4). 345–351. 16 indexed citations
7.
Fabbri, Rita, M. Servidori, Alessandro Zani, & F. Cembali. (1989). Two-stage recovery of lattice damage induced in silicon by ion implantation below amorphization threshold. Aanalysis by simulation of X-ray rocking curves. physica status solidi (a). 115(2). 437–444. 4 indexed citations
8.
Servidori, M., F. Cembali, Rita Fabbri, et al.. (1989). Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 39(1-4). 347–351. 6 indexed citations
9.
Solmi, S., F. Cembali, Rita Fabbri, et al.. (1989). Dependence of transient enhanced diffusion on defect depth position in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 37-38. 394–397. 5 indexed citations
10.
Servidori, M. & F. Cembali. (1988). Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation. Journal of Applied Crystallography. 21(2). 176–181. 20 indexed citations
11.
Servidori, M., R. Angelucci, F. Cembali, et al.. (1987). Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials. Journal of Applied Physics. 61(5). 1834–1840. 77 indexed citations
12.
Borghesi, A., G. Guizzetti, L. Nosenzo, et al.. (1987). Fundamental optical properties of heavily-boron-doped silicon. Physical review. B, Condensed matter. 36(18). 9563–9568. 14 indexed citations
13.
Zaumseil, P., et al.. (1987). Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves. physica status solidi (a). 100(1). 95–104. 55 indexed citations
14.
Cembali, F., et al.. (1986). Structural and Electrical Characterization of Boron Implanted in Preamorphized Silicon Layers. physica status solidi (a). 98(2). 511–516. 8 indexed citations
15.
Cembali, F., et al.. (1986). Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted Junctions. physica status solidi (a). 94(1). 315–319. 28 indexed citations
16.
Cembali, F., M. Servidori, & A. M. Mazzone. (1985). Channeling phenomena in off-axis ion implanted (001) silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 12(2). 225–228. 2 indexed citations
17.
Cembali, F., et al.. (1985). Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffraction. physica status solidi (a). 87(1). 225–233. 16 indexed citations
18.
Cembali, F., A. M. Mazzone, & M. Servidori. (1985). Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction. physica status solidi (a). 91(2). K125–K127. 6 indexed citations
19.
Mazzone, A. M., M. Servidori, & F. Cembali. (1985). Monte carlo simulation of channeling effects near the <100> axis in silicon. Radiation Effects. 87(4). 169–174. 2 indexed citations
20.
Cembali, F. & F. Zignani. (1977). Determination of random and aligned stopping powers for 80–300 keV protons in silicon by back-scattering measurements. Radiation Effects. 31(3). 169–173. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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