Eizo Miyauchi

1.0k total citations
66 papers, 784 citations indexed

About

Eizo Miyauchi is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Eizo Miyauchi has authored 66 papers receiving a total of 784 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 38 papers in Computational Mechanics and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Eizo Miyauchi's work include Ion-surface interactions and analysis (37 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Semiconductor Quantum Structures and Devices (14 papers). Eizo Miyauchi is often cited by papers focused on Ion-surface interactions and analysis (37 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Semiconductor Quantum Structures and Devices (14 papers). Eizo Miyauchi collaborates with scholars based in Japan and China. Eizo Miyauchi's co-authors include Hisao Hashimoto, Hiroshi Arimoto, Akira Takamori, Sumio Sugata, Tetsuo Morita, Toshio Fujii, K. Asakawa, Takao Utsumi, Kiyoshi Asakawa and Hideaki Ishikawa and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Optics Letters.

In The Last Decade

Eizo Miyauchi

62 papers receiving 626 citations

Peers

Countries citing papers authored by Eizo Miyauchi

Since Specialization

Citations

This map shows the geographic impact of Eizo Miyauchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eizo Miyauchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eizo Miyauchi more than expected).

Fields of papers citing papers by Eizo Miyauchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eizo Miyauchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eizo Miyauchi. The network helps show where Eizo Miyauchi may publish in the future.

Co-authorship network of co-authors of Eizo Miyauchi

This figure shows the co-authorship network connecting the top 25 collaborators of Eizo Miyauchi. A scholar is included among the top collaborators of Eizo Miyauchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eizo Miyauchi. Eizo Miyauchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy 1990 ·Journal of Crystal Growth ·Yoshiaki Nakata, Yoshihiro Sugiyama, Osamu Ueda, Shigehiko Sasa, Toshio Fujii, Eizo Miyauchi	10
2	Determination of the resonant-state energy of an In0.53Ga0.47As/AlAs pseudomorphic resonant tunneling barrier grown by MBE 1989 ·Journal of Crystal Growth ·Tsuguo Inata, Shunichi Muto, (unknown), Eizo Miyauchi	4
3	Photochemical fine etching using FIB-induced damage in GaAs for in-situ dry processing 1989 ·Microelectronic Engineering ·Hiroshi Arimoto, M. Kosugi, Hideki Kitada, Eizo Miyauchi	6
4	In-Situ focused ion beam process in UHV. 1989 ·Shinku ·Hiroshi Arimoto, Eizo Miyauchi	1
5	Electronic properties of two-dimensional electron gas in pseudomorphic InxGa1−xAs/N-In0.52Al0.48As heterostructures 1989 ·Journal of Crystal Growth ·S. Sasa, Yoshihiro Nakata, Yoshihiro Sugiyama, Toshio Fujii, Eizo Miyauchi	11
6	Finely focused ion beam technology in III-V compound semiconductors 1987 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown), Eizo Miyauchi	3
7	Zn and Si Ion Emission from Au-Zn-Si LM Ion Source 1987 ·Japanese Journal of Applied Physics ·Hiroshi Arimoto, Eizo Miyauchi, Hisao Hashimoto	3
8	Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation 1987 ·Japanese Journal of Applied Physics ·Kōji Ishida, Eizo Miyauchi, Tetsuo Morita, Takeshi Takamori, Toshiaki Fukunaga, Hisao Hashimoto, Hisao Nakashima	11
9	ENERGY DISTRIBUTION OF ION BEAM FROM VARIOUS LIQUID METAL ION SOURCES 1987 ·Le Journal de Physique Colloques ·Hiroshi Arimoto, Eizo Miyauchi, (unknown), Masanori Komuro	1
10	Chemically enhanced focused ion beam etching of deep grooves and laser-mirror facets in GaAs under Cl2 gas irradiation using a fine nozzle 1987 ·Applied Physics Letters ·(unknown), K. Asakawa, T. Yuasa, Sumio Sugata, Eizo Miyauchi, (unknown), Masanori Ishii	25
11	Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three-dimensional pattern doping crystal growth 1986 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Eizo Miyauchi, Hisao Hashimoto	13
12	Geometrical design of an alignment mark for maskless ion implantation in GaAs 1986 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Tetsuo Morita, Eizo Miyauchi, Hiroshi Arimoto, Akira Takamori, (unknown), Hisao Hashimoto	6
13	Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide 1985 ·Japanese Journal of Applied Physics ·Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, (unknown), Tetsuo Morita, Hisao Hashimoto	26
14	Reduced Damage Generation in GaAs Implanted with Focused Be Ions 1984 ·Japanese Journal of Applied Physics ·(unknown), Eizo Miyauchi, Hiroshi Arimoto, Akira Takamori, Hisao Hashimoto	20
15	Pd–Ni–Si–Be–B Liquid Metal Ion Source for Maskless Ion Implantation 1984 ·Japanese Journal of Applied Physics ·Hiroshi Arimoto, Akira Takamori, Eizo Miyauchi, Hisao Hashimoto	11
16	A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors 1983 ·Japanese Journal of Applied Physics ·Eizo Miyauchi, Hiroshi Arimoto, Hisao Hashimoto, (unknown), Takao Utsumi	20
17	Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System 1983 ·Japanese Journal of Applied Physics ·Eizo Miyauchi, Hiroshi Arimoto, (unknown), Akira Takamori, Hisao Hashimoto, Takao Utsumi	16
18	GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers 1983 ·Japanese Journal of Applied Physics ·Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, (unknown), Hisao Hashimoto	3
19	Compact wavelength multiplexer using optical-fiber pieces 1980 ·Optics Letters ·Eizo Miyauchi, (unknown), H. Nakajima, (unknown), (unknown)	6
20	Measurement method of fiber connection loss using steady-state power distribution 1979 ·Y. Daido, Eizo Miyauchi, (unknown), (unknown)	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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