F. Proix

645 total citations
31 papers, 548 citations indexed

About

F. Proix is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, F. Proix has authored 31 papers receiving a total of 548 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Atomic and Molecular Physics, and Optics, 17 papers in Electrical and Electronic Engineering and 16 papers in Surfaces, Coatings and Films. Recurrent topics in F. Proix's work include Electron and X-Ray Spectroscopy Techniques (16 papers), Advanced Chemical Physics Studies (10 papers) and Semiconductor materials and devices (8 papers). F. Proix is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (16 papers), Advanced Chemical Physics Studies (10 papers) and Semiconductor materials and devices (8 papers). F. Proix collaborates with scholars based in France and Italy. F. Proix's co-authors include C.A. Sébenne, D. Bolmont, M. Bałkanski, Ping Chen, J.-P. Lacharme, Carlo Mariani, U. del Pennino, A. Amoddeo, A. Taleb-Ibrahimi and M. Eddrief and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

F. Proix

31 papers receiving 530 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Proix France 15 381 274 214 149 92 31 548
Toshihiro Ichikawa Japan 13 475 1.2× 226 0.8× 181 0.8× 150 1.0× 80 0.9× 25 601
G.M. Guichar France 17 474 1.2× 277 1.0× 306 1.4× 149 1.0× 110 1.2× 23 667
T.L. van Rooy Netherlands 8 399 1.0× 230 0.8× 188 0.9× 126 0.8× 75 0.8× 8 499
Itsuo Katayama Japan 11 320 0.8× 195 0.7× 167 0.8× 126 0.8× 52 0.6× 31 454
S. M. Mokler United Kingdom 14 273 0.7× 345 1.3× 101 0.5× 154 1.0× 50 0.5× 32 476
L. S. O. Johansson Sweden 13 362 1.0× 237 0.9× 146 0.7× 132 0.9× 59 0.6× 22 496
Keung L. Luke United States 12 302 0.8× 416 1.5× 102 0.5× 119 0.8× 64 0.7× 27 527
G. C. Gazzadi Italy 14 207 0.5× 130 0.5× 185 0.9× 156 1.0× 61 0.7× 31 469
M. A. A. Pudensi United States 11 268 0.7× 271 1.0× 72 0.3× 154 1.0× 66 0.7× 17 489
P. Sassaroli Italy 10 284 0.7× 154 0.6× 136 0.6× 81 0.5× 39 0.4× 14 362

Countries citing papers authored by F. Proix

Since Specialization
Citations

This map shows the geographic impact of F. Proix's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Proix with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Proix more than expected).

Fields of papers citing papers by F. Proix

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Proix. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Proix. The network helps show where F. Proix may publish in the future.

Co-authorship network of co-authors of F. Proix

This figure shows the co-authorship network connecting the top 25 collaborators of F. Proix. A scholar is included among the top collaborators of F. Proix based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Proix. F. Proix is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Proix, F., V. Panella, Alexei L. Glebov, et al.. (1998). Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces. The European Physical Journal B. 5(4-6). 919–926. 6 indexed citations
2.
Pennino, U. del, Roberto Biagi, Lidija Šiller, et al.. (1997). Modifications of Space Charge Layer on Inp110) Surface Induced by Atomic Hydrogen at Very Low Exposures. physica status solidi (a). 159(1). 205–212. 3 indexed citations
3.
Gota, S., R. Gunnella, Ziyu Wu, et al.. (1993). Chemical-shift low-energy photoelectron diffraction: A determination of the InP(110) clean surface structural relaxation. Physical Review Letters. 71(20). 3387–3390. 27 indexed citations
4.
Pennino, U. del, Carlo Mariani, A. Amoddeo, et al.. (1993). HREELS investigation of hydrogenated GaAs(110) surfaces. Journal of Physics Condensed Matter. 5(36). 6613–6622. 16 indexed citations
5.
Proix, F.. (1991). Dissociation effects of H and H+2 on clean III–V compounds. Physica B Condensed Matter. 170(1-4). 457–468. 14 indexed citations
6.
Proix, F., et al.. (1991). Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution. Physical review. B, Condensed matter. 43(18). 14581–14588. 11 indexed citations
7.
Proix, F., et al.. (1989). Room temperature interaction of ionised nitrogen with cleaved GaAs. Vacuum. 39(11-12). 1131–1133. 7 indexed citations
8.
Proix, F., et al.. (1988). Interaction of atomic hydrogen with cleaved InP. II. The decomposition stage. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(2). 199–203. 14 indexed citations
9.
Proix, F., et al.. (1988). Hydrogen-induced contamination of III-V compound surfaces. Journal of Applied Physics. 64(2). 898–902. 18 indexed citations
10.
Lacharme, J.-P., et al.. (1987). Deformations of the surface-state band of clean Si(001) surfaces due to roughening and misorientation. Semiconductor Science and Technology. 2(3). 145–150. 9 indexed citations
11.
Proix, F., et al.. (1987). Effects of atomic hydrogen on the surface properties of cleaved GaAs(110). Semiconductor Science and Technology. 2(7). 418–427. 45 indexed citations
12.
Proix, F., et al.. (1986). A photoemission “black hole” in heavily hydrogenated GaAs(1 1 0) surfaces. Solid State Communications. 57(2). 133–136. 14 indexed citations
13.
Taleb-Ibrahimi, A., C.A. Sébenne, & F. Proix. (1986). Effect of annealing on the structural and electronic properties of Au covered Si(111) surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(5). 2331–2335. 7 indexed citations
14.
Bolmont, D., et al.. (1984). Room temperature adsorption and growth of Ga and In on cleaved Si(111). Surface Science. 137(1). 280–292. 58 indexed citations
15.
Proix, F., et al.. (1983). Effects of vacuum annealing on the electronic properties of cleaved GaAs. Journal of Physics C Solid State Physics. 16(28). 5449–5463. 30 indexed citations
16.
Bolmont, D., et al.. (1982). Room-temperature formation of the Ag/GaAs (110) interface. Journal of Physics C Solid State Physics. 15(16). 3639–3648. 33 indexed citations
17.
Proix, F., et al.. (1973). Study of Interface Phonons in Lamellar Eutectics. Journal of Vacuum Science and Technology. 10(5). 663–664. 3 indexed citations
18.
Guichar, G.M., F. Proix, C.A. Sébenne, & M. Bałkanski. (1972). Influence of Phonons on the Impurity Photoconductivity Spectrum of Phosphorus-Doped Silicon. Physical review. B, Solid state. 5(8). 3013–3017. 3 indexed citations
19.
Guichar, G.M., C.A. Sébenne, F. Proix, & M. Bałkanski. (1972). First-Order Stark Effect in Phosphorus-Doped Silicon from Photoconductivity on Impurity Levels. Physical review. B, Solid state. 5(2). 422–425. 9 indexed citations
20.
Proix, F. & M. Bałkanski. (1969). Infrared Measurements on CdS Thin Films Deposited on Aluminium. physica status solidi (b). 32(1). 119–126. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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