Wen-Hsin Chang

2.4k total citations
130 papers, 1.9k citations indexed

About

Wen-Hsin Chang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Wen-Hsin Chang has authored 130 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 36 papers in Materials Chemistry and 29 papers in Biomedical Engineering. Recurrent topics in Wen-Hsin Chang's work include Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Nanowire Synthesis and Applications (15 papers). Wen-Hsin Chang is often cited by papers focused on Semiconductor materials and devices (56 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers) and Nanowire Synthesis and Applications (15 papers). Wen-Hsin Chang collaborates with scholars based in Japan, Taiwan and United States. Wen-Hsin Chang's co-authors include Gwo‐Bin Lee, J. Kwo, Tatsuro Maeda, Shu‐Chu Shiesh, Abiral Regmi, Geng-Yen Lee, Chen-Pin Hsu, Indu Sarangadharan, Toshifumi Irisawa and W. M. Lau and has published in prestigious journals such as Advanced Materials, ACS Nano and Applied Physics Letters.

In The Last Decade

Wen-Hsin Chang

120 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wen-Hsin Chang Japan 23 1.0k 549 531 385 223 130 1.9k
Feng Zhou China 27 476 0.5× 387 0.7× 600 1.1× 386 1.0× 139 0.6× 109 2.0k
S Baker United States 23 354 0.3× 1.0k 1.8× 430 0.8× 425 1.1× 171 0.8× 68 2.3k
Sang Wook Lee South Korea 27 631 0.6× 1.2k 2.1× 592 1.1× 235 0.6× 203 0.9× 104 2.3k
Thomas Schneider Germany 21 810 0.8× 850 1.5× 1.0k 1.9× 411 1.1× 129 0.6× 50 2.3k
Dan Luo China 30 1.1k 1.1× 621 1.1× 690 1.3× 579 1.5× 646 2.9× 112 2.7k
Daniel C. Pregibon United States 14 490 0.5× 664 1.2× 1.8k 3.4× 570 1.5× 114 0.5× 17 2.5k
Stefano Angioletti‐Uberti United Kingdom 20 303 0.3× 543 1.0× 516 1.0× 537 1.4× 181 0.8× 53 1.9k
Jong‐in Hahm United States 26 1.3k 1.2× 1.6k 2.9× 1.6k 3.0× 941 2.4× 284 1.3× 64 3.3k
Gajendra S. Shekhawat United States 26 1.3k 1.3× 1.1k 1.9× 749 1.4× 567 1.5× 282 1.3× 80 3.0k
H.P. Ho Hong Kong 27 991 1.0× 403 0.7× 1.3k 2.5× 698 1.8× 449 2.0× 133 2.4k

Countries citing papers authored by Wen-Hsin Chang

Since Specialization
Citations

This map shows the geographic impact of Wen-Hsin Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wen-Hsin Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wen-Hsin Chang more than expected).

Fields of papers citing papers by Wen-Hsin Chang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wen-Hsin Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wen-Hsin Chang. The network helps show where Wen-Hsin Chang may publish in the future.

Co-authorship network of co-authors of Wen-Hsin Chang

This figure shows the co-authorship network connecting the top 25 collaborators of Wen-Hsin Chang. A scholar is included among the top collaborators of Wen-Hsin Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wen-Hsin Chang. Wen-Hsin Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chang, Wen-Hsin, et al.. (2025). Improved photovoltaic performance of un-doped FAPbI3 thin film based solar cells via de-trapping excitons. Chinese Journal of Physics. 95. 790–802.
2.
Wu, Hongchun, et al.. (2025). Association between exposure to volatile organic compounds and female infertility: An NHANES analysis. Taiwanese Journal of Obstetrics and Gynecology. 64(3). 493–498.
3.
Maeda, Tatsuro, Hiroyuki Ishii, Wen-Hsin Chang, et al.. (2024). Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films. Materials Science in Semiconductor Processing. 176. 108304–108304. 1 indexed citations
4.
Chang, Wen-Hsin, et al.. (2024). Mobility and stability improvements through in-situ AlOx passivation on extremely thin 2 nm-thick InOx back-gate FETs. Japanese Journal of Applied Physics. 64(1). 01SP07–01SP07. 4 indexed citations
5.
Maeda, Tatsuro, Hiroyuki Ishii, Wen-Hsin Chang, et al.. (2024). Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique. Japanese Journal of Applied Physics. 64(1). 01SP11–01SP11.
6.
Chang, Wen-Hsin, et al.. (2023). Dynamic quantum fully homomorphic encryption scheme based on universal quantum circuit. Journal of Information Security and Applications. 75. 103510–103510. 9 indexed citations
7.
Chang, Wen-Hsin, et al.. (2022). Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases. Japanese Journal of Applied Physics. 61(SD). SD1024–SD1024. 1 indexed citations
8.
9.
Okada, Mitsuhiro, Naoka Nagamura, Tarojiro Matsumura, et al.. (2021). Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping. APL Materials. 9(12). 15 indexed citations
10.
Chang, Wen-Hsin, Y.H. Lin, Toshifumi Irisawa, et al.. (2021). Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure. Japanese Journal of Applied Physics. 61(SC). SC1024–SC1024.
11.
Okada, Mitsuhiro, Naoya Okada, Wen-Hsin Chang, et al.. (2020). Micrometer-scale WS2 atomic layers grown by alkali metal free gas-source chemical vapor deposition with H2S and WF6 precursors. Japanese Journal of Applied Physics. 60(SB). SBBH09–SBBH09. 9 indexed citations
12.
Irisawa, Toshifumi, Naoya Okada, Wen-Hsin Chang, et al.. (2019). CVD grown bilayer WSe 2 /MoSe 2 heterostructures for high performance tunnel transistors. Japanese Journal of Applied Physics. 59(SG). SGGH05–SGGH05. 15 indexed citations
13.
Chang, Wen-Hsin, Toshifumi Irisawa, Hiroyuki Ishii, et al.. (2018). Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies. 191–192. 6 indexed citations
14.
Irisawa, Toshifumi, Takahiko Endo, Yasumitsu Miyata, et al.. (2018). CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis. IEEE Journal of the Electron Devices Society. 6. 1159–1163. 9 indexed citations
15.
Sarangadharan, Indu, Abiral Regmi, Chen-Pin Hsu, et al.. (2017). Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum. Scientific Reports. 7(1). 5256–5256. 193 indexed citations
16.
Chang, Wen-Hsin, Hiroyuki Ota, & Tatsuro Maeda. (2015). Achieving low parasitic resistance in Ge p-channel metal–oxide–semiconductor field-effect transistors by ion implantation after germanidation. Applied Physics Express. 8(5). 54201–54201. 9 indexed citations
17.
Chang, Wen-Hsin, et al.. (2013). Detection of viruses directly from the fresh leaves of a Phalaenopsis orchid using a microfluidic system. Nanomedicine Nanotechnology Biology and Medicine. 9(8). 1274–1282. 29 indexed citations
18.
Chang, Wen-Hsin, Pei-Ching Chang, Y. J. Lee, et al.. (2010). Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001). Crystal Growth & Design. 10(12). 5117–5122. 13 indexed citations
19.
Lim, Wantae, E Douglas, D. P. Norton, et al.. (2009). High mobility InGaZnO4 thin-film transistors on paper. Applied Physics Letters. 94(7). 85 indexed citations
20.
Cole, M. W., D. W. Eckart, R. T. Lareau, et al.. (1990). Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAs. Journal of Electronic Materials. 19(11). 1247–1255. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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