Hao Lu

754 total citations
54 papers, 449 citations indexed

About

Hao Lu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hao Lu has authored 54 papers receiving a total of 449 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Condensed Matter Physics, 42 papers in Electrical and Electronic Engineering and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hao Lu's work include GaN-based semiconductor devices and materials (43 papers), Radio Frequency Integrated Circuit Design (21 papers) and Ga2O3 and related materials (18 papers). Hao Lu is often cited by papers focused on GaN-based semiconductor devices and materials (43 papers), Radio Frequency Integrated Circuit Design (21 papers) and Ga2O3 and related materials (18 papers). Hao Lu collaborates with scholars based in China and United States. Hao Lu's co-authors include Ling Yang, Bin Hou, Xiaohua Ma, Mei Wu, Meng Zhang, Yue Hao, Minhan Mi, Yue Hao, Shiquan Fan and Qing Zhu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Science of The Total Environment.

In The Last Decade

Hao Lu

47 papers receiving 425 citations

Peers

Hao Lu

EEE

CMP

EOMM

AMPO

Chandan Yadav India

J. D. Blevins United States

Hao-Yu Lan United States

Norihiko Sakamoto Japan

Vandana Kumari India

O. Arés Mexico

Jie Wei China

Alicia Gonzalo Spain

Hwen-Fen Hong Taiwan

Chandan Yadav India

Hao Lu

460 ×1.4

EEE

140 ×0.4

CMP

40 ×0.3

EOMM

69 ×0.8

AMPO

75 ×1.3

Citations per year, relative to Hao Lu Hao Lu (= 1×) peers Chandan Yadav

Countries citing papers authored by Hao Lu

Since Specialization

Citations

This map shows the geographic impact of Hao Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao Lu more than expected).

Fields of papers citing papers by Hao Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao Lu. The network helps show where Hao Lu may publish in the future.

Co-authorship network of co-authors of Hao Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Hao Lu. A scholar is included among the top collaborators of Hao Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao Lu. Hao Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hou, Bin, Ling Yang, Meng Zhang, et al.. (2025). Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs. Applied Physics Letters. 126(21). 1 indexed citations

Wu, Xiaojun, et al.. (2025). Domain-Specific Knowledge Graph for Quality Engineering of Continuous Casting: Joint Extraction-Based Construction and Adversarial Training Enhanced Alignment. Applied Sciences. 15(10). 5674–5674. 1 indexed citations

Hou, Bin, Ling Yang, Yongsheng Zhu, et al.. (2025). 3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN. Applied Physics Letters. 126(6). 5 indexed citations

Lu, Hao, et al.. (2025). Recent Advances in AlN-Based Acoustic Wave Resonators. Micromachines. 16(2). 205–205. 2 indexed citations

Hou, Bin, Ling Yang, Qian Xiao, et al.. (2025). High performance ring-type p-GaN AlGaN/GaN HEMTs using reactively sputtered NiNx gate. Vacuum. 242. 114735–114735. 1 indexed citations

Lu, Hao, et al.. (2024). Early-life exposure to polystyrene micro- and nanoplastics disrupts metabolic homeostasis and gut microbiota in juvenile mice with a size-dependent manner. The Science of The Total Environment. 955. 176802–176802. 6 indexed citations

Lu, Hao, Bin Hou, Ling Yang, et al.. (2024). High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts. IEEE Transactions on Electron Devices. 71(9). 5218–5224. 2 indexed citations

Wu, Mei, Bowen Yang, Ling Yang, et al.. (2024). Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design. Applied Physics Letters. 125(21). 2 indexed citations

Wu, Mei, Ling Yang, Bowen Yang, et al.. (2024). 15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer. IEEE Electron Device Letters. 46(3). 365–368. 1 indexed citations

10.

Yang, Ling, Hao Lu, Meng Zhang, et al.. (2024). Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines. 15(10). 1220–1220. 3 indexed citations

11.

Liu, Yungang, et al.. (2024). A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment. Micromachines. 15(12). 1448–1448. 1 indexed citations

12.

Hou, Bin, Ling Yang, Mei Wu, et al.. (2024). High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Science China Information Sciences. 67(12).

13.

Yang, Ling, Meng Zhang, Qing Zhu, et al.. (2024). The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer. Applied Physics Letters. 125(10).

14.

Hou, Bin, Ling Yang, Meng Zhang, et al.. (2024). Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate. Journal of Physics D Applied Physics. 57(26). 265101–265101. 3 indexed citations

15.

Hou, Bin, Ling Yang, Qian Xiao, et al.. (2024). Improved p-GaN/AlGaN/GaN HEMTs with magnetronsputtered AlN cap layer. Applied Surface Science. 682. 161699–161699. 8 indexed citations

16.

Lu, Hao, Ling Yang, Meng Zhang, et al.. (2023). Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications. Micromachines. 14(11). 2104–2104. 2 indexed citations

17.

Lu, Hao, Meng Zhang, Ling Yang, et al.. (2023). A review of GaN RF devices and power amplifiers for 5G communication applications. Fundamental Research. 5(1). 315–331. 33 indexed citations

18.

Yang, Ling, Hao Lu, Meng Zhang, et al.. (2022). Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact. Journal of Applied Physics. 132(16). 3 indexed citations

19.

Yang, Ling, Bin Hou, Meng Zhang, et al.. (2022). The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer. IEEE Transactions on Electron Devices. 69(8). 4170–4174. 27 indexed citations

20.

Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si₃N₄ Bilayer Passivation. IEEE Transactions on Electron Devices. 69(2). 631–636. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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