Jie Wei

1.2k total citations
98 papers, 887 citations indexed

About

Jie Wei is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jie Wei has authored 98 papers receiving a total of 887 indexed citations (citations by other indexed papers that have themselves been cited), including 77 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jie Wei's work include Silicon Carbide Semiconductor Technologies (55 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). Jie Wei is often cited by papers focused on Silicon Carbide Semiconductor Technologies (55 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). Jie Wei collaborates with scholars based in China, France and United States. Jie Wei's co-authors include Xiaorong Luo, Bo Zhang, Zhaoji Li, Tao Sun, Gaoqiang Deng, Kun Zhou, Élie Lefeuvre, Fabien Parrain, Juan Lu and Siyu Deng and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

Jie Wei

90 papers receiving 839 citations

Peers

Jie Wei

EEE

EOMM

CMP

Jiahui Sun Hong Kong

Wenjie Sun China

Jiafei Yao China

M. A. Islam Bangladesh

Fatima Lmai Morocco

Shalini Lal United States

Peter F. Satterthwaite United States

Jeevan Jalli United States

Ananth Saran Yalamarthy United States

Shizhe Wu China

Jiahui Sun Hong Kong

Jie Wei

594 ×0.8

EEE

183 ×0.8

EOMM

116 ×0.7

349 ×2.4

CMP

31 ×0.3

Citations per year, relative to Jie Wei Jie Wei (= 1×) peers Jiahui Sun

Countries citing papers authored by Jie Wei

Since Specialization

Citations

This map shows the geographic impact of Jie Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jie Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jie Wei more than expected).

Fields of papers citing papers by Jie Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jie Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jie Wei. The network helps show where Jie Wei may publish in the future.

Co-authorship network of co-authors of Jie Wei

This figure shows the co-authorship network connecting the top 25 collaborators of Jie Wei. A scholar is included among the top collaborators of Jie Wei based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jie Wei. Jie Wei is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Xie, Xintong, Gaoqiang Deng, Yang Cheng, et al.. (2025). Experimental Study of Heavy Ion Irradiation Hardness for p-GaN HEMTs Under Off-State With Negative Gate Voltage. IEEE Electron Device Letters. 46(5). 709–712. 1 indexed citations

Deng, Gaoqiang, Xiaodong Bi, Yingyi Yan, et al.. (2025). Enhancing Buck Converter Efficiency by Using GaN/Si Hybrid Switches to Suppress Dynamic On-State Resistance. IEEE Transactions on Power Electronics. 40(10). 14425–14436.

Zhou, Hong, Chenlu Wang, Sihan Sun, et al.. (2024). Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode. Applied Physics Letters. 124(17). 16 indexed citations

Li, Hui, Xiaorong Luo, Ran Yao, et al.. (2024). Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module. IEEE Transactions on Power Electronics. 39(10). 12534–12541. 1 indexed citations

Wei, Jie, Quan Zhou, Kemeng Yang, et al.. (2024). Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor With Double Deep P-Regions. IEEE Transactions on Electron Devices. 71(12). 8037–8040.

Wei, Jie, Kemeng Yang, Jie Li, et al.. (2023). Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability. IEEE Transactions on Electron Devices. 70(5). 2622–2626. 4 indexed citations

Wei, Jie, Junnan Wang, Kemeng Yang, et al.. (2023). Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT With a Self-Adapted Parasitic Thyristor. IEEE Transactions on Electron Devices. 70(12). 6486–6491. 1 indexed citations

Luo, Xiaorong, et al.. (2023). Novel Ultralow Loss SOI LIGBT With a Self-Adaptive pMOS and Double Floating Ohmic Contacts. IEEE Transactions on Electron Devices. 70(10). 5196–5202. 3 indexed citations

Yang, Kemeng, Junnan Wang, Jie Wei, et al.. (2023). High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors. IEEE Transactions on Electron Devices. 70(2). 667–674. 4 indexed citations

10.

Wei, Jie, Kemeng Yang, Jie Li, et al.. (2023). Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-Regions. IEEE Transactions on Electron Devices. 70(2). 662–666. 3 indexed citations

11.

Lu, Juan, et al.. (2022). Low Turn-On Voltage and High Breakdown Voltage β-Ga₂O₃ Diode With Fin Channel and Ohmic Contact Anode. IEEE Transactions on Electron Devices. 70(1). 196–203. 10 indexed citations

12.

Sun, Tao, Kemeng Yang, Jie Wei, et al.. (2022). High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss. IEEE Journal of the Electron Devices Society. 10. 808–812. 2 indexed citations

13.

Deng, Gaoqiang, Xiaorong Luo, Jie Wei, et al.. (2020). Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance. IEEE Electron Device Letters. 41(3). 465–468. 16 indexed citations

14.

Luo, Xiaorong, Tao Sun, Jie Wei, et al.. (2019). A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance. IEEE Transactions on Electron Devices. 66(3). 1390–1395. 26 indexed citations

15.

Sun, Tao, Xiaorong Luo, Jie Wei, et al.. (2018). A Carrier Stored SOI LIGBT With Ultralow ON-State Voltage and High Current Capability. IEEE Transactions on Electron Devices. 65(8). 3365–3370. 18 indexed citations

16.

Luo, Xiaorong, Qing Liu, Jie Wei, et al.. (2018). A High Bidirectional Blocking Capability Insulated-Gate Bipolar Transistor With Ultralow Loss. IEEE Transactions on Electron Devices. 65(10). 4729–4733. 7 indexed citations

17.

Wei, Jie, Xiaorong Luo, Gaoqiang Deng, et al.. (2018). Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode. IEEE Transactions on Electron Devices. 66(1). 533–538. 16 indexed citations

18.

Deng, Gaoqiang, Jie Wei, Kun Zhou, et al.. (2018). A Snapback-Free Reverse Conducting Insulated-Gate Bipolar Transistor With Discontinuous Field-Stop Layer. IEEE Transactions on Electron Devices. 65(5). 1856–1861. 13 indexed citations

19.

Deng, Gaoqiang, et al.. (2018). A Snapback-Free Fast-Switching SOI LIGBT With an Embedded Self-Biased n-MOS. IEEE Transactions on Electron Devices. 65(8). 3572–3576. 15 indexed citations

20.

Wei, Jie. (2012). Intercomparison and Uncertainty Evaluation of 1000kV DC High-Voltage Divider. Power System Technology. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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