Hao-Yu Lan

664 total citations
20 papers, 444 citations indexed

About

Hao-Yu Lan is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Hao-Yu Lan has authored 20 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Materials Chemistry, 11 papers in Electrical and Electronic Engineering and 5 papers in Biomedical Engineering. Recurrent topics in Hao-Yu Lan's work include 2D Materials and Applications (11 papers), Ferroelectric and Negative Capacitance Devices (6 papers) and MXene and MAX Phase Materials (4 papers). Hao-Yu Lan is often cited by papers focused on 2D Materials and Applications (11 papers), Ferroelectric and Negative Capacitance Devices (6 papers) and MXene and MAX Phase Materials (4 papers). Hao-Yu Lan collaborates with scholars based in United States, Taiwan and United Kingdom. Hao-Yu Lan's co-authors include Joerg Appenzeller, Zhihong Chen, Chao‐Hsin Wu, Yung‐Hsiang Lin, Gong‐Ru Lin, Yu‐Jung Lu, Chin‐Cheng Chiang, Deep Jariwala, Min‐Hsiung Shih and Ortwin Hess and has published in prestigious journals such as Nature Communications, Nano Letters and ACS Nano.

In The Last Decade

Hao-Yu Lan

18 papers receiving 436 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hao-Yu Lan United States 12 255 236 93 61 60 20 444
Yuan-Xiang Deng China 15 191 0.7× 490 2.1× 55 0.6× 25 0.4× 53 0.9× 38 584
Hengyou Zhang China 8 241 0.9× 197 0.8× 90 1.0× 95 1.6× 195 3.3× 16 411
Jae-Kyung Choi South Korea 5 131 0.5× 285 1.2× 114 1.2× 29 0.5× 76 1.3× 7 336
Zhipeng Tian United States 10 128 0.5× 212 0.9× 97 1.0× 16 0.3× 92 1.5× 14 339
Mario V. Imperatore United States 6 151 0.6× 230 1.0× 203 2.2× 30 0.5× 31 0.5× 9 397
Stefano Rampino Italy 14 520 2.0× 449 1.9× 27 0.3× 23 0.4× 45 0.8× 45 616
J. van Deelen Netherlands 14 498 2.0× 259 1.1× 94 1.0× 16 0.3× 28 0.5× 44 577
Lang Bai China 10 99 0.4× 127 0.5× 158 1.7× 12 0.2× 153 2.5× 25 373
Joonghoon Choi South Korea 9 119 0.5× 187 0.8× 35 0.4× 41 0.7× 87 1.4× 18 237
Yan Zuo China 11 188 0.7× 215 0.9× 47 0.5× 19 0.3× 133 2.2× 33 361

Countries citing papers authored by Hao-Yu Lan

Since Specialization
Citations

This map shows the geographic impact of Hao-Yu Lan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hao-Yu Lan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hao-Yu Lan more than expected).

Fields of papers citing papers by Hao-Yu Lan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hao-Yu Lan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hao-Yu Lan. The network helps show where Hao-Yu Lan may publish in the future.

Co-authorship network of co-authors of Hao-Yu Lan

This figure shows the co-authorship network connecting the top 25 collaborators of Hao-Yu Lan. A scholar is included among the top collaborators of Hao-Yu Lan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hao-Yu Lan. Hao-Yu Lan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lan, Hao-Yu, et al.. (2025). Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2. npj 2D Materials and Applications. 9(1). 6 indexed citations
2.
Lan, Hao-Yu, Lina Liu, Peng Wu, et al.. (2025). Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors. Nature Communications. 16(1). 4160–4160. 6 indexed citations
3.
Lan, Hao-Yu, Rahul Tripathi, S. S. Sharma, et al.. (2025). Monolayer WSe2 Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation. ACS Nano. 19(9). 8916–8925. 7 indexed citations
4.
5.
Lan, Hao-Yu, Rahul Tripathi, Joerg Appenzeller, & Zhihong Chen. (2024). Near-Ideal Subthreshold Swing in Scaled 2D Transistors: The Critical Role of Monolayer hBN Passivation. IEEE Electron Device Letters. 45(7). 1337–1340. 6 indexed citations
6.
Lan, Hao-Yu, et al.. (2024). Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts. ACS Nano. 18(33). 22444–22453. 21 indexed citations
7.
Chiang, Chin‐Cheng, Hao-Yu Lan, Lina Liu, et al.. (2023). Design and Process Co-Optimization of 2-D Monolayer Transistors via Machine Learning. IEEE Transactions on Electron Devices. 70(11). 5991–5996. 9 indexed citations
8.
Lan, Hao-Yu, Vladimir P. Oleshko, Albert V. Davydov, Joerg Appenzeller, & Zhihong Chen. (2023). Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer. IEEE Transactions on Electron Devices. 70(4). 2067–2074. 23 indexed citations
9.
Wu, Peng, Rahul Tripathi, Hao-Yu Lan, et al.. (2023). High-Performance Complementary Circuits from Two-Dimensional MoTe2. Nano Letters. 23(23). 10939–10945. 14 indexed citations
10.
Lan, Hao-Yu, Rahul Tripathi, Xiangkai Liu, Joerg Appenzeller, & Zhihong Chen. (2023). Wafer-scale CVD Monolayer WSe2 p-FETs with Record-high 727 μA/μm Ion and 490 μS/ μm gmax via Hybrid Charge Transfer and Molecular Doping. 1–4. 16 indexed citations
11.
Lan, Hao-Yu, Joerg Appenzeller, & Zhihong Chen. (2022). Dielectric Interface Engineering for High-Performance Monolayer MoS₂ Transistors via hBN Interfacial Layer and Ta Seeding. 2022 International Electron Devices Meeting (IEDM). 7.7.1–7.7.4. 12 indexed citations
12.
Lan, Hao-Yu, Deep Jariwala, Min‐Hsiung Shih, et al.. (2021). Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity. Nano Letters. 21(7). 3083–3091. 91 indexed citations
13.
Chang, Chih‐Li, Hao-Yu Lan, Ho Wai Howard Lee, et al.. (2021). Plasmon-Enhanced Solar-Driven Hydrogen Evolution Using Titanium Nitride Metasurface Broadband Absorbers. ACS Photonics. 8(11). 3125–3132. 48 indexed citations
14.
Chiang, Chin‐Cheng, Hao-Yu Lan, Chin‐Sheng Pang, Joerg Appenzeller, & Zhihong Chen. (2021). Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices. IEEE Electron Device Letters. 43(2). 319–322. 53 indexed citations
15.
Lan, Hao-Yu, et al.. (2020). High-speed integrated micro-LED array for visible light communication. Optics Letters. 45(8). 2203–2203. 60 indexed citations
16.
17.
Lan, Hao-Yu, et al.. (2019). Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor. IEEE Electron Device Letters. 41(1). 91–94. 5 indexed citations
18.
Lan, Hao-Yu, et al.. (2018). 752-MHz Modulation Bandwidth of High-Speed Blue Micro Light-Emitting Diodes. IEEE Journal of Quantum Electronics. 54(5). 1–6. 39 indexed citations
19.
Lan, Hao-Yu, et al.. (2010). Study of an LED device with a honeycomb heat sink. 289–298. 12 indexed citations
20.
Ma, Hsiao-Kang, et al.. (2009). Study of an LED device with vibrating piezoelectric fins. 267–272. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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