L. Geng

416 total citations
7 papers, 359 citations indexed

About

L. Geng is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, L. Geng has authored 7 papers receiving a total of 359 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Condensed Matter Physics, 3 papers in Mechanics of Materials and 3 papers in Electrical and Electronic Engineering. Recurrent topics in L. Geng's work include GaN-based semiconductor devices and materials (7 papers), Metal and Thin Film Mechanics (3 papers) and ZnO doping and properties (3 papers). L. Geng is often cited by papers focused on GaN-based semiconductor devices and materials (7 papers), Metal and Thin Film Mechanics (3 papers) and ZnO doping and properties (3 papers). L. Geng collaborates with scholars based in United States, Japan and Germany. L. Geng's co-authors include F. A. Ponce, Shinji Tanaka, R. Liu, S. Srinivasan, Yukio Narukawa, H. Omiya, Juan Cai, S. Srinivasan, A. Bell and Michael R. Stevens and has published in prestigious journals such as Applied Physics Letters, physica status solidi (b) and Materials Science and Engineering B.

In The Last Decade

L. Geng

7 papers receiving 350 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. Geng United States	6	324	157	139	128	105	7	359
H. Omiya United States	10	418 1.3×	167 1.1×	188 1.4×	195 1.5×	157 1.5×	15	493
Hirohiko Hirasawa United States	6	326 1.0×	89 0.6×	173 1.2×	165 1.3×	67 0.6×	8	340
O. H. Nam South Korea	10	337 1.0×	92 0.6×	142 1.0×	170 1.3×	203 1.9×	15	425
O. V. Kovalenkov United States	11	271 0.8×	77 0.5×	129 0.9×	128 1.0×	153 1.5×	33	367
L. Reißmann Germany	9	256 0.8×	75 0.5×	174 1.3×	106 0.8×	124 1.2×	14	332
Pradeep Rajagopal United States	9	339 1.0×	122 0.8×	99 0.7×	168 1.3×	170 1.6×	16	387
S.K. Mathis United States	7	219 0.7×	108 0.7×	162 1.2×	127 1.0×	233 2.2×	12	375
Shi You United States	7	308 1.0×	76 0.5×	118 0.8×	174 1.4×	81 0.8×	16	340
M. A. Jacobson Russia	6	323 1.0×	86 0.5×	92 0.7×	189 1.5×	100 1.0×	14	377
S. Tottori Japan	7	443 1.4×	115 0.7×	170 1.2×	206 1.6×	168 1.6×	10	489

Countries citing papers authored by L. Geng

Since Specialization

Citations

This map shows the geographic impact of L. Geng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Geng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Geng more than expected).

Fields of papers citing papers by L. Geng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Geng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Geng. The network helps show where L. Geng may publish in the future.

Co-authorship network of co-authors of L. Geng

This figure shows the co-authorship network connecting the top 25 collaborators of L. Geng. A scholar is included among the top collaborators of L. Geng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Geng. L. Geng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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7 of 7 papers shown

1.

Ponce, F. A., S. Srinivasan, A. Bell, et al.. (2003). Microstructure and electronic properties of InGaN alloys. physica status solidi (b). 240(2). 273–284. 122 indexed citations

2.

Srinivasan, S., L. Geng, R. Liu, et al.. (2003). Slip systems and misfit dislocations in InGaN epilayers. Applied Physics Letters. 83(25). 5187–5189. 184 indexed citations

3.

Srinivasan, S., L. Geng, F. A. Ponce, Yukio Narukawa, & Shinji Tanaka. (2003). Glide along non‐basal slip planes in InGaN epilayers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2440–2443. 4 indexed citations

4.

Bertram, F., S. Srinivasan, L. Geng, et al.. (2002). Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1−xN layers. Applied Physics Letters. 80(19). 3524–3526. 19 indexed citations

5.

Bertram, F., S. Srinivasan, L. Geng, et al.. (2002). Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence. Materials Science and Engineering B. 93(1-3). 19–23. 10 indexed citations

6.

Geng, L., F. A. Ponce, Shinji Tanaka, H. Omiya, & Yasuaki Nakagawa. (2001). Surface Morphology of AlxGa1-xN Films Grown by MOCVD. physica status solidi (a). 188(2). 803–806. 12 indexed citations

7.

Bertram, F., S. Srinivasan, L. Geng, et al.. (2001). Spatial Variation of Luminescence of InGaN Alloys Measured by Highly-Spatially-Resolved Scanning Catholuminescence. physica status solidi (b). 228(1). 35–39. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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