T. Schupp

439 total citations
24 papers, 382 citations indexed

About

T. Schupp is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Schupp has authored 24 papers receiving a total of 382 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Schupp's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (9 papers) and Quantum and electron transport phenomena (8 papers). T. Schupp is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (9 papers) and Quantum and electron transport phenomena (8 papers). T. Schupp collaborates with scholars based in Germany and Japan. T. Schupp's co-authors include D. J. As, K. Lischka, R. Goldhahn, Marcus Röppischer, N. Esser, Martin Feneberg, Christoph Cobet, J. Rudolph, D. Hägele and P. Schley and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

T. Schupp

24 papers receiving 376 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Schupp Germany 10 303 169 152 142 124 24 382
Tobias Meisch Germany 12 334 1.1× 151 0.9× 152 1.0× 182 1.3× 135 1.1× 40 415
V. G. Mansurov Russia 9 277 0.9× 119 0.7× 132 0.9× 194 1.4× 144 1.2× 81 401
Ravi Shivaraman United States 9 352 1.2× 215 1.3× 164 1.1× 160 1.1× 119 1.0× 12 450
Kamran Forghani United States 15 279 0.9× 228 1.3× 274 1.8× 202 1.4× 138 1.1× 44 531
S. Kaiser Germany 11 186 0.6× 172 1.0× 232 1.5× 190 1.3× 86 0.7× 18 396
A. M. Mizerov Russia 12 392 1.3× 95 0.6× 135 0.9× 187 1.3× 240 1.9× 68 444
Takatoshi Ikegami Japan 5 494 1.6× 357 2.1× 174 1.1× 156 1.1× 152 1.2× 6 563
A. Khachapuridze Poland 11 222 0.7× 138 0.8× 138 0.9× 185 1.3× 124 1.0× 36 350
E. V. Konenkova Russia 10 187 0.6× 139 0.8× 198 1.3× 99 0.7× 68 0.5× 53 355
Toshiki Hikosaka Japan 12 438 1.4× 130 0.8× 160 1.1× 187 1.3× 210 1.7× 45 470

Countries citing papers authored by T. Schupp

Since Specialization
Citations

This map shows the geographic impact of T. Schupp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Schupp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Schupp more than expected).

Fields of papers citing papers by T. Schupp

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Schupp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Schupp. The network helps show where T. Schupp may publish in the future.

Co-authorship network of co-authors of T. Schupp

This figure shows the co-authorship network connecting the top 25 collaborators of T. Schupp. A scholar is included among the top collaborators of T. Schupp based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Schupp. T. Schupp is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schupp, T., et al.. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 126(15). 4 indexed citations
2.
Schupp, T., et al.. (2016). Automotive Lighting Continues to Evolve. Optics and Photonics News. 27(11). 36–36. 7 indexed citations
3.
Schupp, T., et al.. (2016). Electron spin dynamics in cubic GaN. Physical review. B.. 94(23). 7 indexed citations
4.
Schaefer, Andreas, et al.. (2015). Strain dependent electron spin dynamics in bulk cubic GaN. Journal of Applied Physics. 117(9). 5 indexed citations
5.
Schupp, T., et al.. (2015). Temperature dependence of the electron Landé g-factor in cubic GaN. Journal of Applied Physics. 118(22). 7 indexed citations
6.
Sergent, Sylvain, et al.. (2014). Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy. Applied Physics Letters. 105(14). 8 indexed citations
7.
Landmann, M., E. Rauls, W. G. Schmidt, et al.. (2013). Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. Physical Review B. 87(19). 41 indexed citations
8.
Feneberg, Martin, Marcus Röppischer, Christoph Cobet, et al.. (2012). Optical properties of cubic GaN from 1 to 20 eV. Physical Review B. 85(15). 58 indexed citations
9.
Schupp, T., C. Meier, Thomas Niendorf, et al.. (2012). Formation of defects in cubic GaN grown on nano‐patterned 3C‐SiC (001). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 1028–1031. 5 indexed citations
10.
Schupp, T., Thomas Niendorf, F. Bertram, et al.. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics. 110(12). 27 indexed citations
11.
Schupp, T., Tobias Meisch, Benjamin Neuschl, et al.. (2011). Molecular beam epitaxy based growth of cubic GaN quantum dots. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(5). 1495–1498. 14 indexed citations
12.
Rudolph, J., et al.. (2011). Long room-temperature electron spin lifetimes in bulk cubic GaN. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7937. 793711–793711. 1 indexed citations
13.
Schupp, T., et al.. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates. Journal of Crystal Growth. 323(1). 84–87. 9 indexed citations
14.
Schupp, T., Tobias Meisch, Benjamin Neuschl, et al.. (2010). Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation. Journal of Crystal Growth. 323(1). 286–289. 9 indexed citations
15.
Rudolph, J., et al.. (2010). Long room-temperature electron spin lifetimes in highly doped cubic GaN. Applied Physics Letters. 97(6). 19 indexed citations
16.
Schupp, T., K. Lischka, & D. J. As. (2010). MBE growth of atomically smooth non-polar cubic AlN. Journal of Crystal Growth. 312(9). 1500–1504. 47 indexed citations
17.
Schupp, T., Tobias Meisch, Benjamin Neuschl, et al.. (2010). Growth of cubic GaN quantum dots. AIP conference proceedings. 165–168. 7 indexed citations
18.
Schupp, T., Georg Rossbach, P. Schley, et al.. (2010). MBE growth of cubic AlN on 3C‐SiC substrate. physica status solidi (a). 207(6). 1365–1368. 10 indexed citations
19.
Röppischer, Marcus, R. Goldhahn, Georg Rossbach, et al.. (2009). Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities. Journal of Applied Physics. 106(7). 50 indexed citations
20.
Schupp, T., Georg Rossbach, P. Schley, et al.. (2009). Growth of atomically smooth cubic AlN by molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(1). 17–20. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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