T. Schupp

439 citations

24 papers · 382 indexed · h-index 10

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 23
Electronic, Optical and Magnetic Materials 7
- Ga2O3 and related materials 7

Co-authors: D. J. As K. Lischka R. Goldhahn Marcus Röppischer N. Esser Martin Feneberg Christoph Cobet J. Rudolph
Journals: Journal of Applied Physics (5 papers)Journal of Crystal Growth (4 papers)Applied Physics Letters (3 papers)Physical Review B (2 papers)Optics and Photonics News (1 paper)
Partner nations: Germany Japan

In The Last Decade

T. Schupp

24 papers receiving 376 citations

Peers

Countries citing papers authored by T. Schupp

Since Specialization

Citations

This map shows the geographic impact of T. Schupp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Schupp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Schupp more than expected).

Fields of papers citing papers by T. Schupp

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Schupp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Schupp. The network helps show where T. Schupp may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Schupp, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Schupp Line = papers co-authored together T. Schupp links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical excitation density dependence of spin dynamics in bulk cubic GaN Journal of Applied Physics ·M. Sivakmaran, T. Schupp, D. J. As, D. Hägele, J. Rudolph	2019	4
2	Automotive Lighting Continues to Evolve Optics and Photonics News ·Mário Sérgio, T. Schupp, Yan Weihu	2016	7
3	Electron spin dynamics in cubic GaN Physical review. B. ·M. Sivakmaran, T. Schupp, D. J. As, O. Brandt, D. Hägele, J. Rudolph	2016	7
4	Strain dependent electron spin dynamics in bulk cubic GaN Journal of Applied Physics ·Andreas Schaefer, M. Sivakmaran, T. Schupp, Shao Pei, D. J. As, D. Hägele, J. Rudolph	2015	5
5	Temperature dependence of the electron Landé g-factor in cubic GaN Journal of Applied Physics ·M. Sivakmaran, T. Schupp, D. J. As, D. Hägele, J. Rudolph	2015	7
6	Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy Applied Physics Letters ·Sylvain Sergent, Satoshi Kako, Nick Murphy, T. Schupp, D. J. As, Yasuhiko Arakawa	2014	8
7	Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN Physical Review B ·M. Landmann, E. Rauls, W. G. Schmidt, Marcus Röppischer, Christoph Cobet, N. Esser, T. Schupp, D. J. As, Martin Feneberg, R. Goldhahn	2013	41
8	Optical properties of cubic GaN from 1 to 20 eV Physical Review B ·Martin Feneberg, Marcus Röppischer, Christoph Cobet, N. Esser, Jörg Schörmann, T. Schupp, D. J. As, Cyril Price, J. Bläsing, A. Krost, R. Goldhahn	2012	58
9	Formation of defects in cubic GaN grown on nano‐patterned 3C‐SiC (001) Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·N.V. Dac, Zhao Bid, T. Schupp, Marta Faustino, Nick Murphy, Daniela Úsuga-Zuluaga, C. Meier, Thomas Niendorf, H. Maier, K. Lischka, D. J. As, J.K.N. Lindner	2012	5
10	Anti-phase domains in cubic GaN Journal of Applied Physics ·N.V. Dac, T. Schupp, Zhao Bid, Thomas Niendorf, Sara María Molina Correa, R. El Ayachy, F. Bertram, J. Christen, Ronny Kirste, A. Hoffmann, J.K.N. Lindner, D. J. As	2011	27
11	Molecular beam epitaxy based growth of cubic GaN quantum dots Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. Schupp, Tobias Meisch, Benjamin Neuschl, Martin Feneberg, K. Thonke, K. Lischka, D. J. As	2011	14
12	Long room-temperature electron spin lifetimes in bulk cubic GaN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M. Sivakmaran, J. Rudolph, T. Schupp, D. J. As, K. Lischka, D. Hägele	2011	1
13	Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates Journal of Crystal Growth ·N.V. Dac, Marta Faustino, 高橋朋, Zhao Bid, T. Schupp, P Belloni, J.K.N. Lindner, K. Lischka, D. J. As	2010	9
14	Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation Journal of Crystal Growth ·T. Schupp, Tobias Meisch, Benjamin Neuschl, Martin Feneberg, K. Thonke, K. Lischka, D. J. As	2010	9
15	Long room-temperature electron spin lifetimes in highly doped cubic GaN Applied Physics Letters ·M. Sivakmaran, J. Rudolph, T. Schupp, D. J. As, K. Lischka, D. Hägele	2010	19
16	MBE growth of atomically smooth non-polar cubic AlN Journal of Crystal Growth ·T. Schupp, K. Lischka, D. J. As	2010	47
17	Growth of cubic GaN quantum dots AIP conference proceedings ·T. Schupp, Tobias Meisch, Benjamin Neuschl, Martin Feneberg, K. Thonke, K. Lischka, D. J. As, Gabriel Ferro, P. Siffert	2010	7
18	MBE growth of cubic AlN on 3C‐SiC substrate physica status solidi (a) ·T. Schupp, Georg Rossbach, P. Schley, R. Goldhahn, Marcus Röppischer, N. Esser, Christoph Cobet, K. Lischka, D. J. As	2010	10
19	Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities Journal of Applied Physics ·Marcus Röppischer, R. Goldhahn, Georg Rossbach, P. Schley, Christoph Cobet, N. Esser, T. Schupp, K. Lischka, D. J. As	2009	50
20	Growth of atomically smooth cubic AlN by molecular beam epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. Schupp, Georg Rossbach, P. Schley, R. Goldhahn, K. Lischka, D. J. As	2009	7

About T. Schupp

T. Schupp is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 24 papers that have together received 382 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (9 papers), Quantum and electron transport phenomena (8 papers), ZnO doping and properties (8 papers), Ga2O3 and related materials (7 papers), Metal and Thin Film Mechanics (5 papers), Silicon Carbide Semiconductor Technologies (3 papers) and Semiconductor Quantum Structures and Devices (3 papers). The work is most often cited by research in Condensed Matter Physics (303 citations), Electronic, Optical and Magnetic Materials (124 citations), Atomic and Molecular Physics, and Optics (169 citations), Materials Chemistry (142 citations) and Mechanics of Materials (70 citations). T. Schupp has collaborated with scholars based in Germany and Japan. Frequent co-authors include D. J. As, K. Lischka, R. Goldhahn, Marcus Röppischer, N. Esser, Martin Feneberg, Christoph Cobet, J. Rudolph, D. Hägele and P. Schley. Their work appears in journals such as Journal of Applied Physics, Journal of Crystal Growth, Applied Physics Letters, Physical Review B and Optics and Photonics News.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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