C. Bocchi

1.1k total citations
72 papers, 849 citations indexed

About

C. Bocchi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, C. Bocchi has authored 72 papers receiving a total of 849 indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Atomic and Molecular Physics, and Optics, 55 papers in Electrical and Electronic Engineering and 30 papers in Materials Chemistry. Recurrent topics in C. Bocchi's work include Semiconductor Quantum Structures and Devices (43 papers), Semiconductor materials and devices (19 papers) and Advanced Semiconductor Detectors and Materials (19 papers). C. Bocchi is often cited by papers focused on Semiconductor Quantum Structures and Devices (43 papers), Semiconductor materials and devices (19 papers) and Advanced Semiconductor Detectors and Materials (19 papers). C. Bocchi collaborates with scholars based in Italy, Russia and Cuba. C. Bocchi's co-authors include L. Nasi, S. Franchi, P. Fṙanzosi, F. Albertini, F. Casoli, S. Fabbrici, P. Frigeri, L. Seravalli, Giovanna Trevisi and C. Ferrari and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Bocchi

70 papers receiving 801 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Bocchi Italy 17 697 526 259 186 88 72 849
F. Schrey United States 18 840 1.2× 715 1.4× 231 0.9× 63 0.3× 121 1.4× 49 988
V. P. LaBella United States 19 874 1.3× 560 1.1× 488 1.9× 125 0.7× 114 1.3× 63 1.1k
A. Ruiz Spain 14 464 0.7× 383 0.7× 224 0.9× 66 0.4× 95 1.1× 47 610
I. Teramoto Japan 17 521 0.7× 780 1.5× 308 1.2× 80 0.4× 52 0.6× 72 977
J. Bąk‐Misiuk Poland 15 370 0.5× 508 1.0× 455 1.8× 154 0.8× 63 0.7× 131 799
M. Tessier France 18 572 0.8× 349 0.7× 233 0.9× 446 2.4× 39 0.4× 64 808
A.Y.C. Yu United States 12 682 1.0× 731 1.4× 194 0.7× 61 0.3× 102 1.2× 20 945
C. d’Anterroches France 17 706 1.0× 595 1.1× 248 1.0× 77 0.4× 143 1.6× 45 960
X. Bian Canada 11 550 0.8× 203 0.4× 228 0.9× 285 1.5× 62 0.7× 25 694
D. Bisero Italy 16 510 0.7× 246 0.5× 183 0.7× 347 1.9× 102 1.2× 63 713

Countries citing papers authored by C. Bocchi

Since Specialization
Citations

This map shows the geographic impact of C. Bocchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Bocchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Bocchi more than expected).

Fields of papers citing papers by C. Bocchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Bocchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Bocchi. The network helps show where C. Bocchi may publish in the future.

Co-authorship network of co-authors of C. Bocchi

This figure shows the co-authorship network connecting the top 25 collaborators of C. Bocchi. A scholar is included among the top collaborators of C. Bocchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Bocchi. C. Bocchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Trevisi, Giovanna, L. Seravalli, P. Frigeri, et al.. (2011). MBE growth and properties of low‐density InAs/GaAs quantum dot structures. Crystal Research and Technology. 46(8). 801–804. 5 indexed citations
2.
Longo, Massimo, et al.. (2009). Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices. Journal of Crystal Growth. 311(18). 4293–4300. 5 indexed citations
3.
Casoli, F., F. Albertini, L. Nasi, et al.. (2008). Strong coercivity reduction in perpendicular FePt∕Fe bilayers due to hard/soft coupling. Applied Physics Letters. 92(14). 80 indexed citations
4.
Rimada, Julio C., M. Prezioso, L. Nasi, et al.. (2008). Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs. Materials Science and Engineering B. 165(1-2). 111–114. 13 indexed citations
5.
Frigeri, P., L. Nasi, M. Prezioso, et al.. (2007). Effects of the quantum dot ripening in high-coverage InAs∕GaAs nanostructures. Journal of Applied Physics. 102(8). 37 indexed citations
6.
7.
Bellani, V., C. Bocchi, S. Franchi, et al.. (2007). Residual strain measurements in InGaAs metamorphic buffer layers on GaAs. The European Physical Journal B. 56(3). 217–222. 27 indexed citations
8.
Casoli, F., F. Albertini, S. Fabbrici, et al.. (2005). Exchange-coupled FePt/Fe bilayers with perpendicular magnetization. IEEE Transactions on Magnetics. 41(10). 3877–3879. 38 indexed citations
9.
Мухамеджанов, Э. Х. & C. Bocchi. (2000). Quantitative X-ray standing-wave phase analysis by means of photoelectrons. Journal of Applied Crystallography. 33(6). 1430–1433. 1 indexed citations
10.
Lomov, A. A., V. A. Bushuev, Р. М. Имамов, C. Bocchi, & P. Fṙanzosi. (1999). Asymptotic diffuse X-ray scattering by silicon-doped GaAs single crystals. Crystallography Reports. 44(4). 625–634. 1 indexed citations
11.
Ferrini, R., M. Geddo, G. Guizzetti, et al.. (1999). Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates. Journal of Applied Physics. 86(8). 4706–4708. 16 indexed citations
12.
Grilli, E., M. Guzzi, C. Bocchi, et al.. (1998). Direct- and indirect-energy-gap dependence on Al concentration inAlxGa1−xSb(x<~0.41). Physical review. B, Condensed matter. 57(4). 2295–2301. 19 indexed citations
13.
Bocchi, C. & C. Ferrari. (1995). A study of thin buried layers in IIl-V compound heterostructures by high-resolution X-ray diffraction. Journal of Physics D Applied Physics. 28(4A). A164–A168. 18 indexed citations
14.
Bocchi, C., C. Ferrari, P. Fṙanzosi, et al.. (1992). X-Ray double crystal rocking curves of Ga1−x Al x As/GaAs laser structures. Il Nuovo Cimento D. 14(2). 129–139. 1 indexed citations
15.
Bocchi, C., et al.. (1991). Structural characterization of Hg0.78Cd0.22Te/CdTe LPE heterostructures grown from Te solutions. Journal of Crystal Growth. 113(1-2). 53–60. 6 indexed citations
16.
Bocchi, C., C. Ferrari, P. Fṙanzosi, et al.. (1990). Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxy. Journal of Crystal Growth. 106(4). 665–672. 1 indexed citations
17.
Bocchi, C. & Carlo Ghezzi. (1989). The role of phonon eigenvectors on the X-ray thermal diffuse scattering in GaAs. Il Nuovo Cimento D. 11(5). 697–707. 1 indexed citations
18.
Bocchi, C., et al.. (1987). X-ray double-crystal rocking curves and interface shape in III–V heterostructures. Acta Crystallographica Section A Foundations of Crystallography. 43(a1). C127–C127. 1 indexed citations
19.
Ghezzi, Carlo & C. Bocchi. (1982). Diffuse x-ray scattering and the structure of oxide layers on real GaAs(111) surfaces. Thin Solid Films. 88(1). 1–8. 5 indexed citations
20.
Bocchi, C., et al.. (1981). Growth conditions and morphology of cobalt telluride (Co2Te3) single crystals. Journal of Crystal Growth. 54(2). 335–338. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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