H. Ghoneim

558 total citations
14 papers, 463 citations indexed

About

H. Ghoneim is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Ghoneim has authored 14 papers receiving a total of 463 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Ghoneim's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Nanowire Synthesis and Applications (12 papers). H. Ghoneim is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Nanowire Synthesis and Applications (12 papers). H. Ghoneim collaborates with scholars based in Switzerland, United States and Germany. H. Ghoneim's co-authors include Heinz Schmid, Heike Riel, Mats Björk, Kirsten E. Moselund, Cedric Bessire, Siegfried Karg, Emanuel Lörtscher, W. Rieß, Andreas Schenk and D. J. Webb and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Nanotechnology.

In The Last Decade

H. Ghoneim

13 papers receiving 441 citations

Peers

H. Ghoneim

EEE

BE

AMPO

MC

CSE

Luca De Michielis Switzerland

Stefano Poli Italy

J. Harari France

Reto Rhyner Switzerland

Cedric Bessire Switzerland

Zachary S. Bittner United States

Leonardo Gomez United States

Sanjeewa Dissanayake Japan

Keat Mun Hoe Singapore

Cáit Ní Chléirigh United States

Luca De Michielis Switzerland

H. Ghoneim

822 ×1.9

EEE

293 ×1.1

BE

81 ×1.1

AMPO

50 ×0.8

MC

2 ×0.2

CSE

Citations per year, relative to H. Ghoneim H. Ghoneim (= 1×) peers Luca De Michielis

Countries citing papers authored by H. Ghoneim

Since Specialization

Citations

This map shows the geographic impact of H. Ghoneim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Ghoneim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Ghoneim more than expected).

Fields of papers citing papers by H. Ghoneim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Ghoneim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Ghoneim. The network helps show where H. Ghoneim may publish in the future.

Co-authorship network of co-authors of H. Ghoneim

This figure shows the co-authorship network connecting the top 25 collaborators of H. Ghoneim. A scholar is included among the top collaborators of H. Ghoneim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Ghoneim. H. Ghoneim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

1.

Karg, Siegfried, Philipp Mensch, Bernd Gotsmann, et al.. (2013). Measurement of Thermoelectric Properties of Single Semiconductor Nanowires. Journal of Electronic Materials. 42(7). 2409–2414. 27 indexed citations

2.

Ghoneim, H., Philipp Mensch, Heinz Schmid, et al.. (2012). In situdoping of catalyst-free InAs nanowires. Nanotechnology. 23(50). 505708–505708. 25 indexed citations

3.

Riel, Heike, Kirsten E. Moselund, Cedric Bessire, et al.. (2012). InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs. 16.6.1–16.6.4. 44 indexed citations

4.

Moselund, Kirsten E., Heinz Schmid, Cedric Bessire, et al.. (2012). InAs–Si Nanowire Heterojunction Tunnel FETs. IEEE Electron Device Letters. 33(10). 1453–1455. 115 indexed citations

5.

Ghoneim, H.. (2012). From All-Si Nanowire TFETs Towards III-V TFETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1 indexed citations

6.

Schmid, Heinz, Kirsten E. Moselund, Mats Björk, et al.. (2011). Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors. 181–182. 25 indexed citations

7.

Moselund, Kirsten E., Mats Björk, Heinz Schmid, et al.. (2011). Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric. IEEE Transactions on Electron Devices. 58(9). 2911–2916. 44 indexed citations

8.

Moselund, Kirsten E., H. Ghoneim, Heinz Schmid, et al.. (2010). Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors. Nanotechnology. 21(43). 435202–435202. 20 indexed citations

9.

Björk, Mats, Kirsten E. Moselund, Heinz Schmid, et al.. (2010). VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs. 45301. 1–2. 1 indexed citations

10.

Björk, Mats, Heinz Schmid, Cedric Bessire, et al.. (2010). Si–InAs heterojunction Esaki tunnel diodes with high current densities. Applied Physics Letters. 97(16). 87 indexed citations

11.

Moselund, Kirsten E., H. Ghoneim, Mats Björk, et al.. (2009). Comparison of VLS grown Si NW tunnel FETs with different gate stacks. 448–451. 32 indexed citations

12.

Ghoneim, H., Joachim Knoch, Heike Riel, et al.. (2009). Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs. 69–72. 11 indexed citations

13.

Moselund, Kirsten E., H. Ghoneim, Mats Björk, et al.. (2009). VLS-grown silicon nanowire tunnel FET. 92. 23–24. 11 indexed citations

14.

Ghoneim, H., Joachim Knoch, Heike Riel, et al.. (2009). Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 95(21). 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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