V. Marrello

770 total citations
30 papers, 631 citations indexed

About

V. Marrello is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. Marrello has authored 30 papers receiving a total of 631 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. Marrello's work include Phase-change materials and chalcogenides (8 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (6 papers). V. Marrello is often cited by papers focused on Phase-change materials and chalcogenides (8 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (6 papers). V. Marrello collaborates with scholars based in United States and Canada. V. Marrello's co-authors include A. Onton, J. W. Mayer, M. Wöhlecke, G. Ottaviani, J. O. McCaldin, D. Sigurd, W. W. Rühle, V. B. Jipson, K. Rubin and Lars Samuelson and has published in prestigious journals such as Science, Physical Review Letters and Applied Physics Letters.

In The Last Decade

V. Marrello

28 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Marrello United States 15 434 416 245 76 60 30 631
Yoshihiko Mizushima Japan 14 394 0.9× 581 1.4× 267 1.1× 128 1.7× 53 0.9× 78 754
H. Kodera Japan 15 218 0.5× 827 2.0× 323 1.3× 57 0.8× 19 0.3× 54 935
T. Skettrup Denmark 15 373 0.9× 492 1.2× 552 2.3× 145 1.9× 109 1.8× 51 880
Hiromu Kato Japan 18 242 0.6× 486 1.2× 506 2.1× 109 1.4× 34 0.6× 52 770
R. Azoulay France 19 332 0.8× 756 1.8× 708 2.9× 83 1.1× 43 0.7× 71 1.1k
Toshiaki Ikoma Japan 16 169 0.4× 606 1.5× 499 2.0× 49 0.6× 54 0.9× 59 784
Árpád Barna Hungary 10 118 0.3× 145 0.3× 101 0.4× 49 0.6× 61 1.0× 37 349
Antonella Poggi Italy 17 170 0.4× 651 1.6× 267 1.1× 118 1.6× 59 1.0× 86 856
Jiro Ōsaka Japan 13 158 0.4× 438 1.1× 498 2.0× 64 0.8× 16 0.3× 39 690
I. Ladany United States 14 186 0.4× 491 1.2× 341 1.4× 45 0.6× 15 0.3× 50 606

Countries citing papers authored by V. Marrello

Since Specialization
Citations

This map shows the geographic impact of V. Marrello's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Marrello with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Marrello more than expected).

Fields of papers citing papers by V. Marrello

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Marrello. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Marrello. The network helps show where V. Marrello may publish in the future.

Co-authorship network of co-authors of V. Marrello

This figure shows the co-authorship network connecting the top 25 collaborators of V. Marrello. A scholar is included among the top collaborators of V. Marrello based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Marrello. V. Marrello is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rubin, K., et al.. (1984). Reversible Cycling Studies of Te-Alloy Films. ThCD2–ThCD2. 1 indexed citations
2.
Bell, Alan E. & V. Marrello. (1984). Magnetic and Optical Data Storage: A Comparison of the Technological Limits.. 21(1). 512–518. 8 indexed citations
3.
Marrello, V., et al.. (1983). Two-Regime Ablative Hole Formation Process In Tellurium And Tellurium-Alloy Films. 382. 182. 1 indexed citations
4.
Marrello, V., et al.. (1983). <title>Pulse Width Transfer Function Of Tellurium-Alloy Disks</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 420. 255–259. 1 indexed citations
5.
Lee, Wen‐Yaung, et al.. (1983). <title>Stability Of Thin Te And Te-Alloy Films For Optical Data Storage</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1316. 282–289. 2 indexed citations
6.
Bell, Alan E., et al.. (1983). <title>Characterization Of Optical Recording Disk Noise</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 420. 306–312. 1 indexed citations
7.
Marrello, V., et al.. (1981). The effect of overcoats on the ablative writing characteristics of tellurium films. Journal of Vacuum Science and Technology. 18(1). 75–77. 17 indexed citations
8.
Marrello, V. & A. Onton. (1980). Dependence of electroluminescence efficiency and memory effect on Mn concentration in ZnS:Mn ACTEL devices. IEEE Transactions on Electron Devices. 27(9). 1767–1770. 33 indexed citations
9.
Marrello, V. & A. Onton. (1980). The Dependence of the Memory Effect in ZnS : Mn A‐C Thin Film Electroluminescence on Mn Distribution. Journal of The Electrochemical Society. 127(10). 2220–2222. 4 indexed citations
10.
Rühle, W. W., V. Marrello, & A. Onton. (1979). Filamentary AC electroluminescence in ZnS:Mn. Journal of Electronic Materials. 8(6). 839–853. 11 indexed citations
11.
Rühle, W. W., V. Marrello, & A. Onton. (1979). AC thin film electroluminescence, filamentary emission and its memory effect. Journal of Luminescence. 18-19. 729–738. 17 indexed citations
12.
Marrello, V., W. W. Rühle, & A. Onton. (1977). The memory effect of ZnS : Mn ac thin-film electroluminescence. Applied Physics Letters. 31(7). 452–454. 39 indexed citations
13.
Onton, A. & V. Marrello. (1976). The absorption edge of amorphous BaTiO3. AIP conference proceedings. 31. 320–327. 8 indexed citations
14.
Marrello, V., T. C. McGill, & J. W. Mayer. (1976). Properties of the electron-hole condensate in Ge double-injection diodes. I. Physical review. B, Solid state. 13(4). 1607–1616. 2 indexed citations
15.
Chen, Min, V. Marrello, T. C. McGill, & J. W. Mayer. (1976). Properties of the electron-hole condensate in Ge double-injection diodes. II. Physical review. B, Solid state. 13(4). 1617–1621. 1 indexed citations
16.
Marrello, V., Robert B. Hammond, R. N. Silver, T. C. McGill, & J. W. Mayer. (1974). Electron hole condensate radiation from Ge double injection devices between 1.5° and 4.2°. Physics Letters A. 47(3). 237–238. 2 indexed citations
17.
Ottaviani, G., D. Sigurd, V. Marrello, J. O. McCaldin, & J. W. Mayer. (1973). Crystal Growth of Silicon and Germanium in Metal Films. Science. 180(4089). 948–949. 14 indexed citations
18.
Sigurd, D., G. Ottaviani, V. Marrello, J. W. Mayer, & J. O. McCaldin. (1973). Crystallization of evaporated Si/Ag and Ge/Al films. Journal of Non-Crystalline Solids. 12(1). 135–139. 24 indexed citations
19.
Marrello, V., T. F. Lee, R. N. Silver, T. C. McGill, & J. W. Mayer. (1973). Condensation of Injected Electrons and Holes in Germanium. Physical Review Letters. 31(9). 593–594. 15 indexed citations
20.
Marrello, V., et al.. (1973). High-purity germanium γ-ray spectrometers with Al regrowth p+ contacts. Nuclear Instruments and Methods. 108(1). 93–97. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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