F. Nava

5.6k total citations · 1 hit paper
137 papers, 4.1k citations indexed

About

F. Nava is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Nava has authored 137 papers receiving a total of 4.1k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Electrical and Electronic Engineering, 84 papers in Atomic and Molecular Physics, and Optics and 23 papers in Materials Chemistry. Recurrent topics in F. Nava's work include Semiconductor materials and interfaces (67 papers), Silicon and Solar Cell Technologies (38 papers) and Silicon Carbide Semiconductor Technologies (34 papers). F. Nava is often cited by papers focused on Semiconductor materials and interfaces (67 papers), Silicon and Solar Cell Technologies (38 papers) and Silicon Carbide Semiconductor Technologies (34 papers). F. Nava collaborates with scholars based in Italy, United States and France. F. Nava's co-authors include G. Ottaviani, C. Canali, Carlo Jacoboni, Claudio Canali, A. Alberigi-Quaranta, C. Lanzieri, P. Vanni, A. Cavallini, S. F. Kozlov and A. Castaldini and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Nava

136 papers receiving 3.9k citations

Hit Papers

Electron drift velocity i... 1975 2026 1992 2009 1975 100 200 300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Electron drift velocity in silicon
    1975 374 citations C. Canali, F. Nava et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
F. Nava 3.0k 1.7k 1.2k 341 279 137 4.1k
G. Ottaviani 4.0k 1.4× 2.6k 1.5× 1.5k 1.2× 268 0.8× 307 1.1× 122 5.5k
D. W. Feldman 1.8k 0.6× 1.0k 0.6× 1.2k 1.0× 174 0.5× 130 0.5× 131 3.0k
J. C. Bourgoin 4.8k 1.6× 3.1k 1.8× 1.9k 1.5× 154 0.5× 736 2.6× 245 6.1k
R. N. Hall 3.8k 1.3× 2.2k 1.3× 1.0k 0.8× 125 0.4× 264 0.9× 46 4.5k
R. Triboulet 3.5k 1.2× 2.0k 1.1× 2.2k 1.8× 53 0.2× 97 0.3× 253 4.4k
Y. Pétroff 1.6k 0.5× 2.5k 1.4× 1.2k 0.9× 147 0.4× 93 0.3× 113 3.9k
Kevin L. Jensen 2.3k 0.8× 2.0k 1.1× 1.3k 1.0× 153 0.4× 100 0.4× 195 3.7k
R. Müller 1.5k 0.5× 1.5k 0.9× 330 0.3× 1000 2.9× 94 0.3× 227 3.3k
Kazutaka G. Nakamura 631 0.2× 878 0.5× 1.3k 1.0× 412 1.2× 537 1.9× 216 2.7k
W. L. Hansen 1.2k 0.4× 894 0.5× 858 0.7× 372 1.1× 199 0.7× 82 2.2k

Countries citing papers authored by F. Nava

Since Specialization
Citations

This map shows the geographic impact of F. Nava's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Nava with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Nava more than expected).

Fields of papers citing papers by F. Nava

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Nava. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Nava. The network helps show where F. Nava may publish in the future.

Co-authorship network of co-authors of F. Nava

This figure shows the co-authorship network connecting the top 25 collaborators of F. Nava. A scholar is included among the top collaborators of F. Nava based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Nava. F. Nava is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bertuccio, G., S. Caccia, F. Nava, et al.. (2009). Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors. Materials science forum. 615-617. 845–848. 16 indexed citations
2.
Cavallini, A., A. Castaldini, & F. Nava. (2008). On the UV responsivity of neutron irradiated 4H-SiC. Applied Physics Letters. 93(15). 6 indexed citations
3.
Bertuccio, G., S. Caccia, A. Pullia, et al.. (2007). Design of a SiC/GaN Heterodevice for Ionizing Radiation Detection. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 313–316. 1 indexed citations
4.
Pini, S., M. Bruzzi, M. Bucciolini, et al.. (2003). High-bandgap semiconductor dosimeters for radiotherapy applications. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 514(1-3). 135–140. 19 indexed citations
5.
Jakšić, M., Ž. Bošnjak, Davor Gracin, et al.. (2002). Characterisation of SiC by IBIC and other IBA techniques. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 188(1-4). 130–134. 17 indexed citations
6.
Castaldini, A., A. Cavallini, L. Polenta, C. Canali, & F. Nava. (2002). Double-junction effect in proton-irradiated silicon diodes. Journal of Applied Physics. 92(4). 2013–2016. 7 indexed citations
7.
Bertuccio, G., R. Casiraghi, & F. Nava. (2001). Epitaxial silicon carbide for X-ray detection. IEEE Transactions on Nuclear Science. 48(2). 232–233. 58 indexed citations
8.
Bertuccio, G., C. Canali, Gianluigi De Geronimo, et al.. (1999). Integration of front-end electronics with GaAs pixel detectors: experimental and feasibility analysis. IEEE Transactions on Nuclear Science. 46(4). 1209–1214. 5 indexed citations
9.
Vanni, P., F. Nava, C. Canali, et al.. (1999). Low temperature annealing effects on the performance of proton irradiated GaAs detectors. Nuclear Physics B - Proceedings Supplements. 78(1-3). 521–526. 2 indexed citations
10.
Nava, F., P. Vanni, A. Cavallini, et al.. (1998). Proton induced bulk damage effects in gallium arsenide detectors. Nuclear Physics B - Proceedings Supplements. 61(3). 432–437. 4 indexed citations
11.
Castaldini, A., A. Cavallini, L. Polenta, C. Canali, & F. Nava. (1998). Analysis of the active layer in SI GaAs Schottky diodes. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 410(1). 79–84. 24 indexed citations
12.
Nava, F.. (1990). Crystallization, resistivity and microstructure of metal–silicon thin-film alloys. Philosophical Magazine B. 61(4). 601–625. 9 indexed citations
13.
Ottaviani, G., et al.. (1989). Temperature Dependence of Damage in Boron-Implanted Silicon. MRS Proceedings. 147. 4 indexed citations
14.
Borghesi, A., A. Piaggi, G. Guizzetti, F. Nava, & Matthew Bacchetta. (1989). Optical properties of vanadium silicide polycrystalline films. Physical review. B, Condensed matter. 40(5). 3249–3253. 10 indexed citations
15.
Cerofolini, G. F., Paola Manini, L. Meda, et al.. (1985). Damage recovery and dopant activation phenomena in heavily arsenic-implanted silicon. Thin Solid Films. 129(1-2). 111–125. 4 indexed citations
16.
Tromp, R. M., E. J. van Loenen, R.G. Smeenk, et al.. (1983). Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature. Surface Science. 124(1). 1–25. 42 indexed citations
17.
Cerofolini, G. F., M. L. Polignano, F. Nava, & G. Ottaviani. (1982). On the mechanism responsible for phosphorus inactivation in heavily doped silicon. Thin Solid Films. 97(4). 363–367. 4 indexed citations
18.
Reggiani, L., S. Bosi, Claudio Canali, F. Nava, & S. F. Kozlov. (1979). On the lattice scattering and effective mass of holes in natural diamond. Solid State Communications. 30(6). 333–335. 38 indexed citations
19.
Nava, F., et al.. (1976). Electron drift velocity in high-purity Ge between 8 and 240K. Journal of Physics C Solid State Physics. 9(9). 1685–1689. 13 indexed citations
20.
Canali, Claudio, F. Nava, G. Ottaviani, & K. Zanio. (1973). Effect of scattering and trapping by ionized centers on the electron drift velocity in CdTe. Solid State Communications. 13(8). 1255–1259. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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