H. Bernas

5.9k total citations · 1 hit paper
200 papers, 4.9k citations indexed

About

H. Bernas is a scholar working on Atomic and Molecular Physics, and Optics, Computational Mechanics and Electrical and Electronic Engineering. According to data from OpenAlex, H. Bernas has authored 200 papers receiving a total of 4.9k indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Atomic and Molecular Physics, and Optics, 86 papers in Computational Mechanics and 79 papers in Electrical and Electronic Engineering. Recurrent topics in H. Bernas's work include Ion-surface interactions and analysis (84 papers), Magnetic properties of thin films (40 papers) and Silicon and Solar Cell Technologies (37 papers). H. Bernas is often cited by papers focused on Ion-surface interactions and analysis (84 papers), Magnetic properties of thin films (40 papers) and Silicon and Solar Cell Technologies (37 papers). H. Bernas collaborates with scholars based in France, United States and Germany. H. Bernas's co-authors include J. Chaumont, V. Mathet, J. Ferré, J. P. Jamet, C. Chappert, T. Devolder, M.-O. Ruault, H. Launois, F. Rousseaux and E. Cambril and has published in prestigious journals such as Science, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

H. Bernas

196 papers receiving 4.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Planar Patterned Magnetic Media Obtained by Ion Irradiation

1998 653 citations C. Chappert, H. Bernas et al. profile →

Peers

Countries citing papers authored by H. Bernas

Since Specialization

Citations

This map shows the geographic impact of H. Bernas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Bernas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Bernas more than expected).

Fields of papers citing papers by H. Bernas

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Bernas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Bernas. The network helps show where H. Bernas may publish in the future.

Co-authorship network of co-authors of H. Bernas

This figure shows the co-authorship network connecting the top 25 collaborators of H. Bernas. A scholar is included among the top collaborators of H. Bernas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Bernas. H. Bernas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation 2007 ·Ultramicroscopy ·M. Gilbert, F. Vurpillot, Angela Vella, H. Bernas, B. Déconihout	20
2	Modes of Periodic Domain Wall Motion in Ultrathin Ferromagnetic Layers 2007 ·Physical Review Letters ·W. Kleemann, J. Rhensius, O. Petracic, J. Ferré, J. P. Jamet, H. Bernas	42
3	Deroughening of Domain Wall Pairs by Dipolar Repulsion 2005 ·Physical Review Letters ·M. Bauer, A. Mougin, J. P. Jamet, Vincent Repain, J. Ferré, R. L. Stamps, H. Bernas, C. Chappert	36
4	Synthesis of Lead Chalcogenide Nanocrystals by Sequential Ion Implantation in Silica 2005 ·The Journal of Physical Chemistry B ·R. Espiau de Lamaëstre, Jérôme Majimel, François Jomard, H. Bernas	29
5	Nanostructuring materials with energetic beams : symposium held April 22-23, 2003, San Francisco, California, U.S.A. 2003 ·A. Meldrum, S. Roorda, H. Bernas	1
6	Magnetic phase diagrams of He ion-irradiated Pt/Co/Pt ultrathin films 2003 ·Journal of Physics D Applied Physics ·J. Ferré, T. Devolder, H. Bernas, J. P. Jamet, Vincent Repain, M. Bauer, N. Vernier, C. Chappert	22
7	Ordering Intermetallic Alloys by Ion Irradiation: A Way to Tailor Magnetic Media 2003 ·Physical Review Letters ·H. Bernas, Jean‐Philippe Attané, K.‐H. Heinig, D. Halley, D. Ravelosona, A. Marty, P. Auric, C. Chappert, Y. Samson	112
8	How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study 2002 ·Applied Physics Letters ·M.-O. Ruault, F. Fortuna, H. Bernas, M. C. Ridgway, J. S. Williams	17
9	Ion irradiation of gold inclusions in SiO2: Experimental evidence for inverse Ostwald ripening 2001 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Giancarlo Rizza, Matthias Strobel, K.‐H. Heinig, H. Bernas	58
10	Ion beam-induced magnetic patterning at the sub-0.1 μm level 1999 ·Comptes Rendus de l Académie des Sciences - Series IIB - Mechanics-Physics-Astronomy ·T. Devolder, Christophe Vieu, H. Bernas, (unknown), C. Chappert, J. Giérak, (unknown), (unknown), (unknown), Yong Chen, F. Rousseaux, V. Mathet, (unknown), O. Kaı̈tasov	1
11	Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study 1996 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown), M.-O. Ruault, O. Kaı̈tasov, H. Bernas, K.‐H. Heinig	3
12	Nucleation, Growth and Ostwald Ripening of Cosi₂ Precipitates During Co Ion Implantation In Si 1994 ·MRS Proceedings ·(unknown), M.-O. Ruault, (unknown), O. Kaı̈tasov, K.‐H. Heinig, H. Bernas	4
13	Structural effect of heavy ion irradiation on GdBaCuO ceramics 1990 ·Revue de Physique Appliquée ·M.-O. Ruault, H. Bernas, M. Gasgnier, J.C. Levet, H. Noël, P. Gougeon, M. Potel	8
14	Electronic and vibrational properties of implanted silver deuteride 1986 ·Journal of the Less Common Metals ·A. Traverse, P. Nédellec, H. Bernas, J.P. Burger	3
15	Transformation to amorphous state of metals by ion implantation: P in Ni 1985 ·Physical review. B, Condensed matter ·C. M. S. Cohen, A. Benyagoub, H. Bernas, J. Chaumont, L. Thomé, M. Berti, A. V. Drigo	73
16	Electrical properties of amorphous Ni-P alloys produced by ion implantation 1982 ·Physical review. B, Condensed matter ·L. Mendoza‐Zélis, L. Thomé, L. Brossard, J. Chaumont, K. Królas, H. Bernas	22
17	Stability of non-equilibrium nickel hydrides prepared by low-temperature ion implantation 1981 ·physica status solidi (a) ·L. Brossard, L. Thomé, A. Traverse, H. Bernas, J. Chaumont, (unknown)	1
18	ÉTUDE EN MICROSCOPIE ÉLECTRONIQUE DE DÉFAUTS CRÉÉS DANS LES MÉTAUX PAR IMPLANTATION IONIQUE 1973 ·Le Journal de Physique Colloques ·M.-O. Ruault, B. Jouffrey, J. Chaumont, H. Bernas	2
19	The hyperfine field of praseodymium implanted in iron 1969 ·Proceedings of the Royal Society of London A Mathematical and Physical Sciences ·(unknown), N. J. Stone, H. Bernas, D. Spanjaard, I. A. Campbell	6
20	The comparability of hyperfine coupling fields measured in alloys prepared by ion implantation and by melting or diffusion 1967 ·Physics Letters A ·(unknown), (unknown), N. J. Stone, D. Spanjaard, H. Bernas	13

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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