J. Krueger

439 total citations
15 papers, 346 citations indexed

About

J. Krueger is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Krueger has authored 15 papers receiving a total of 346 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 7 papers in Electrical and Electronic Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Krueger's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (5 papers) and ZnO doping and properties (5 papers). J. Krueger is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (5 papers) and ZnO doping and properties (5 papers). J. Krueger collaborates with scholars based in United States, Japan and Australia. J. Krueger's co-authors include Christian Kisielowski, Eicke R. Weber, S. Ruvimov, T. Suski, Joel W. Ager, Hiroshi Amano, J. Washburn, Isamu Akasaki, Z. Liliental‐Weber and E. R. Weber and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Krueger

15 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Krueger United States 10 224 161 153 130 122 15 346
B. Yavich Brazil 10 169 0.8× 144 0.9× 128 0.8× 86 0.7× 169 1.4× 54 330
R. J. Gorman United States 9 331 1.5× 140 0.9× 211 1.4× 189 1.5× 94 0.8× 19 389
Akihiko Ishibashi Japan 12 262 1.2× 112 0.7× 172 1.1× 132 1.0× 133 1.1× 28 339
N. M. Shmidt Russia 12 327 1.5× 232 1.4× 92 0.6× 187 1.4× 150 1.2× 53 431
I. Berishev United States 10 281 1.3× 238 1.5× 161 1.1× 137 1.1× 122 1.0× 36 448
Takeshi Kusumori Japan 10 155 0.7× 135 0.8× 212 1.4× 123 0.9× 62 0.5× 33 326
S. Lavanga Italy 12 301 1.3× 213 1.3× 121 0.8× 123 0.9× 61 0.5× 37 389
D. I. Merkurisov Russia 11 296 1.3× 217 1.3× 82 0.5× 209 1.6× 78 0.6× 24 361
J. Woitok Germany 10 166 0.7× 171 1.1× 110 0.7× 74 0.6× 143 1.2× 52 284
Brandon Mitchell United States 12 331 1.5× 176 1.1× 237 1.5× 207 1.6× 104 0.9× 39 416

Countries citing papers authored by J. Krueger

Since Specialization
Citations

This map shows the geographic impact of J. Krueger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Krueger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Krueger more than expected).

Fields of papers citing papers by J. Krueger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Krueger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Krueger. The network helps show where J. Krueger may publish in the future.

Co-authorship network of co-authors of J. Krueger

This figure shows the co-authorship network connecting the top 25 collaborators of J. Krueger. A scholar is included among the top collaborators of J. Krueger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Krueger. J. Krueger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Jansen, M., G. Carey, S. Hallstein, et al.. (2007). Visible laser sources for projection displays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6489. 648908–648908. 21 indexed citations
2.
Mooradian, A., G. Carey, J.J. Dudley, et al.. (2007). Invited Paper: Surface‐emitting‐diode lasers and laser arrays for displays. Journal of the Society for Information Display. 15(10). 805–809. 10 indexed citations
3.
McHugo, Scott A., A.T. Krishnan, J. Krueger, et al.. (2003). Characterization of failure mechanisms for oxide VCSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 55–55. 7 indexed citations
4.
Krueger, J., et al.. (2003). Studies of ESD-related failure patterns of Agilent oxide VCSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 162–162. 14 indexed citations
5.
Ruvimov, S., Z. Liliental‐Weber, J. Washburn, et al.. (1999). Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer. MRS Proceedings. 572. 2 indexed citations
6.
Perlin, P., et al.. (1998). Effect of internal absorption on cathodoluminescence from GaN. MRS Internet Journal of Nitride Semiconductor Research. 3. 43 indexed citations
7.
Lorusso, Gian F., H. H. Solak, F. Cerrina, et al.. (1998). X-Ray Photoemission Spectromicroscopy Of Gan And AIGan. MRS Proceedings. 512. 3 indexed citations
8.
Kim, Youngmee, et al.. (1997). Stress Controlled MBE-growth of GaN:Mg and GaN:Si. MRS Proceedings. 482. 7 indexed citations
9.
León, R., D. R. M. Williams, J. Krueger, E. R. Weber, & M. R. Melloch. (1997). Diffusivity transients and radiative recombination in intermixedIn0.5Ga0.5As/GaAsquantum structures. Physical review. B, Condensed matter. 56(8). R4336–R4339. 38 indexed citations
10.
Kisielowski, C., et al.. (1996). Impact of Growth Temperature, Pressure, and Strain on the Morphology of GaN Films. MRS Proceedings. 449. 11 indexed citations
11.
Ager, Joel W., T. Suski, S. Ruvimov, et al.. (1996). Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films. MRS Proceedings. 449. 16 indexed citations
12.
Irsigler, R., J. Ludwig, K. Runge, et al.. (1996). Characterization of semi-insulating GaAs for detector application. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 380(1-2). 14–17. 12 indexed citations
13.
Suski, T., J. Krueger, C. Kisielowski, et al.. (1996). Properties Of Homoepitaxially Mbe-Grown Gan. MRS Proceedings. 423. 1 indexed citations
14.
Ruvimov, S., Z. Liliental‐Weber, T. Suski, et al.. (1996). Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire. Applied Physics Letters. 69(7). 990–992. 147 indexed citations
15.
Fujioka, Hiroshi, J. Krueger, A. Arun Prasad, et al.. (1995). Annealing dynamics of arsenic-rich GaAs formed by ion implantation. Journal of Applied Physics. 78(3). 1470–1475. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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