Nakao Akutsu

621 total citations
27 papers, 532 citations indexed

About

Nakao Akutsu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Nakao Akutsu has authored 27 papers receiving a total of 532 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Nakao Akutsu's work include GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (10 papers). Nakao Akutsu is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (13 papers) and ZnO doping and properties (10 papers). Nakao Akutsu collaborates with scholars based in Japan, Singapore and United States. Nakao Akutsu's co-authors include Koh Matsumoto, Mitsuaki Shimizu, Hajime Okumura, Yoshio Yano, H. Tokunaga, Shuichi Yagi, Hiromichi Ohashi, K. L. Teo, Y. Yamamoto and Takashi Egawa and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Japanese Journal of Applied Physics.

In The Last Decade

Nakao Akutsu

26 papers receiving 493 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nakao Akutsu Japan 12 471 267 256 179 168 27 532
W. Imler United States 7 529 1.1× 312 1.2× 242 0.9× 208 1.2× 186 1.1× 10 596
I. Berishev United States 10 281 0.6× 238 0.9× 137 0.5× 161 0.9× 122 0.7× 36 448
B. Schöttker Germany 10 420 0.9× 160 0.6× 184 0.7× 211 1.2× 209 1.2× 22 478
Da-Cheng Lu China 11 276 0.6× 161 0.6× 142 0.6× 162 0.9× 122 0.7× 33 378
F. G. McIntosh United States 11 452 1.0× 149 0.6× 233 0.9× 183 1.0× 164 1.0× 17 504
R. J. Gorman United States 9 331 0.7× 140 0.5× 189 0.7× 211 1.2× 94 0.6× 19 389
O. H. Nam South Korea 10 337 0.7× 203 0.8× 111 0.4× 170 0.9× 142 0.8× 15 425
Christos Thomidis United States 15 439 0.9× 184 0.7× 240 0.9× 179 1.0× 246 1.5× 35 561
Koji Uematsu Japan 5 506 1.1× 214 0.8× 274 1.1× 238 1.3× 151 0.9× 5 547
Hiroya Kimura Japan 5 429 0.9× 164 0.6× 232 0.9× 209 1.2× 135 0.8× 6 459

Countries citing papers authored by Nakao Akutsu

Since Specialization
Citations

This map shows the geographic impact of Nakao Akutsu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nakao Akutsu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nakao Akutsu more than expected).

Fields of papers citing papers by Nakao Akutsu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nakao Akutsu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nakao Akutsu. The network helps show where Nakao Akutsu may publish in the future.

Co-authorship network of co-authors of Nakao Akutsu

This figure shows the co-authorship network connecting the top 25 collaborators of Nakao Akutsu. A scholar is included among the top collaborators of Nakao Akutsu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nakao Akutsu. Nakao Akutsu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shimizu, Mitsuaki, et al.. (2008). p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors. Japanese Journal of Applied Physics. 47(4S). 2817–2817. 17 indexed citations
2.
Yagi, Shuichi, Mitsuaki Shimizu, Toshihide Ide, Yoshio Yano, & Nakao Akutsu. (2008). Effects of surface passivation films on AlGaN/GaN HEMT with MIS gate structure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2004–2006. 4 indexed citations
3.
Fukuda, Yasushi, et al.. (2008). Multiwafer atmospheric‐pressure MOVPE reactor for nitride semiconductors and ex‐situ dry cleaning of reactor components using chlorine gas for stable operation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(9). 3017–3019. 5 indexed citations
4.
Yagi, Shuichi, Mitsuaki Shimizu, Hajime Okumura, et al.. (2007). 1.8 kV AlGaN/GaN HEMTs with High-k/Oxide/SiN MIS Structure. 43. 261–264. 5 indexed citations
5.
Yagi, Shuichi, Mitsuaki Shimizu, Hajime Okumura, et al.. (2007). Off‐state drain current and breakdown voltage of AlGaN/GaN MIS‐HEMT with multilayered gate insulator. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2682–2685. 3 indexed citations
6.
Ide, Toshihide, Mitsuaki Shimizu, Akira Nakajima, et al.. (2007). Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors. Japanese Journal of Applied Physics. 46(4S). 2334–2334. 10 indexed citations
7.
Fukuda, Yasushi, et al.. (2006). Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases. Journal of Crystal Growth. 298. 433–436. 3 indexed citations
8.
Yagi, Shuichi, Y. Yamamoto, Mitsuaki Shimizu, et al.. (2006). Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate. 1–4. 6 indexed citations
9.
Yagi, Shuichi, Mitsuaki Shimizu, Y. Yamamoto, et al.. (2006). High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator. Solid-State Electronics. 50(6). 1057–1061. 89 indexed citations
10.
Hou, Yun, et al.. (2000). An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN. Applied Physics Letters. 76(8). 1033–1035. 10 indexed citations
11.
Nakamura, Koichi, et al.. (2000). Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation. Applied Surface Science. 159-160. 374–379. 32 indexed citations
12.
Chua, S. J., et al.. (1999). Photoreflectance study on the surface states of n-type GaN. Semiconductor Science and Technology. 14(5). 399–402. 5 indexed citations
13.
Hou, Yun, et al.. (1999). Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire. Applied Physics Letters. 75(20). 3117–3119. 12 indexed citations
14.
Liu, W., et al.. (1999). Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures. Journal of materials research/Pratt's guide to venture capital sources. 14(7). 2794–2798. 2 indexed citations
15.
Liu, Wei, Mingfu Li, Soo-Jin Chua, Nakao Akutsu, & Koh Matsumoto. (1999). Photoreflectance study of Au-schottky contacts on n-GaN. Journal of Electronic Materials. 28(4). 360–363. 4 indexed citations
16.
Tachibana, Akitomo, et al.. (1999). Quantum Chemical Studies of Gas Phase Reactions between TMA, TMG, TMI and NH3. physica status solidi (a). 176(1). 699–703. 20 indexed citations
17.
Liu, Wei, Mingfu Li, Zhe Chuan Feng, et al.. (1999). Material properties of GaN grown by MOCVD. Surface and Interface Analysis. 28(1). 150–154. 1 indexed citations
18.
Teo, K. L., John S. Colton, Peifeng Yu, et al.. (1998). An analysis of temperature dependent photoluminescence line shapes in InGaN. Applied Physics Letters. 73(12). 1697–1699. 97 indexed citations
19.
Liu, Wei, K. L. Teo, Ming Fu Li, et al.. (1998). The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures. Journal of Crystal Growth. 189-190. 648–651. 7 indexed citations
20.
Uchida, Kazuo, Nakao Akutsu, Koh Matsumoto, et al.. (1996). III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel. MRS Proceedings. 449. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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