G. Beshkov

469 total citations
49 papers, 406 citations indexed

About

G. Beshkov is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, G. Beshkov has authored 49 papers receiving a total of 406 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 27 papers in Materials Chemistry and 11 papers in Mechanics of Materials. Recurrent topics in G. Beshkov's work include Semiconductor materials and devices (24 papers), Diamond and Carbon-based Materials Research (13 papers) and Metal and Thin Film Mechanics (11 papers). G. Beshkov is often cited by papers focused on Semiconductor materials and devices (24 papers), Diamond and Carbon-based Materials Research (13 papers) and Metal and Thin Film Mechanics (11 papers). G. Beshkov collaborates with scholars based in Bulgaria, Poland and Greece. G. Beshkov's co-authors include V. Krastev, P. Petrov, E. Atanassova, D. Papadimitriou, K. Gesheva, N. Nedev, Lei Shi, V.K. Gueorguiev, D. Spassov and A. Paskaleva and has published in prestigious journals such as Sensors and Actuators B Chemical, Applied Surface Science and Journal of Physics D Applied Physics.

In The Last Decade

G. Beshkov

47 papers receiving 400 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Beshkov Bulgaria	11	254	240	102	59	45	49	406
O. Böhme Spain	11	230 0.9×	187 0.8×	42 0.4×	37 0.6×	56 1.2×	21	362
Susumu Takabayashi Japan	14	437 1.7×	177 0.7×	171 1.7×	84 1.4×	54 1.2×	36	536
N. M. J. Conway United Kingdom	10	422 1.7×	230 1.0×	190 1.9×	26 0.4×	21 0.5×	17	478
S. Dalui India	12	375 1.5×	195 0.8×	109 1.1×	51 0.9×	60 1.3×	20	459
Miroslav Michalka Slovakia	14	445 1.8×	136 0.6×	183 1.8×	101 1.7×	98 2.2×	46	522
D. Dasgupta India	12	692 2.7×	521 2.2×	120 1.2×	63 1.1×	90 2.0×	16	805
Guang-Rui Gu China	12	289 1.1×	189 0.8×	42 0.4×	40 0.7×	22 0.5×	35	395
Eugene J. Karwacki United States	11	194 0.8×	275 1.1×	61 0.6×	40 0.7×	31 0.7×	24	394
A.A. Wronkowska Poland	12	154 0.6×	232 1.0×	51 0.5×	55 0.9×	120 2.7×	38	378
B.-S. Jeong United States	10	365 1.4×	288 1.2×	38 0.4×	84 1.4×	42 0.9×	15	579

Countries citing papers authored by G. Beshkov

Since Specialization

Citations

This map shows the geographic impact of G. Beshkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Beshkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Beshkov more than expected).

Fields of papers citing papers by G. Beshkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Beshkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Beshkov. The network helps show where G. Beshkov may publish in the future.

Co-authorship network of co-authors of G. Beshkov

This figure shows the co-authorship network connecting the top 25 collaborators of G. Beshkov. A scholar is included among the top collaborators of G. Beshkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Beshkov. G. Beshkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kulisch, W., Cyril Popov, Silviya Boycheva, et al.. (2004). Investigation of the growth mechanism and structure of nanocrystalline diamond films by rapid thermal annealing. Thin Solid Films. 469-470. 99–104. 10 indexed citations

Beshkov, G., G. P. Vassilev, M.R. Elizalde, & T. Gómez-Acebo. (2003). Hardness of C, CNx and AlN thin films after rapid thermal annealing. Materials Chemistry and Physics. 82(2). 452–457. 6 indexed citations

Gueorguiev, V.K., et al.. (2001). Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process. Materials Science and Engineering B. 83(1-3). 223–226. 5 indexed citations

Beshkov, G., et al.. (2001). RAPID THERMAL ANNEALING OF Co_xN. Materials and Manufacturing Processes. 16(4). 531–540. 4 indexed citations

Beshkov, G., et al.. (2000). FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy. Vacuum. 58(2-3). 420–427. 2 indexed citations

Spassov, D., E. Atanassova, & G. Beshkov. (2000). Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5–Si structures. Microelectronics Journal. 31(8). 653–661. 13 indexed citations

Papadimitriou, D., et al.. (1999). Spectroscopic characterization of thin SiC films. Diamond and Related Materials. 8(6). 1148–1151. 8 indexed citations

Beshkov, G., et al.. (1998). XPS study of plasma treated carbon layers deposited on porous silicon. Materials Science and Engineering B. 56(1). 1–4. 11 indexed citations

Szekeres, A., M. Gärtner, F. Vasiliu, M. Marinov, & G. Beshkov. (1998). Crystallization of a-Si:H films by rapid thermal annealing. Journal of Non-Crystalline Solids. 227-230. 954–957. 12 indexed citations

10.

Beshkov, G., et al.. (1997). Rapid thermal recrystallization of amorphous silicon films. Journal of materials research/Pratt's guide to venture capital sources. 12(10). 2511–2514. 1 indexed citations

11.

Beshkov, G., et al.. (1996). Effect of rapid thermal annealing on the properties of thin carbon films. Materials Science and Engineering B. 38(1-2). 25–28. 3 indexed citations

12.

Beshkov, G., et al.. (1996). Influence of vacuum rapid thermal annealing on the properties of Al and Ag films on quartz. Vacuum. 47(11). 1329–1331. 3 indexed citations

13.

Paskaleva, A., E. Atanassova, & G. Beshkov. (1995). The effect of rapid thermal annealing in vacuum on the properties of thin SiO₂films. Journal of Physics D Applied Physics. 28(5). 906–913. 9 indexed citations

14.

Gesheva, K., et al.. (1995). Preparation of WSi₂ by RTA Annealing of CVD-W thin Films. MRS Proceedings. 402. 2 indexed citations

15.

Dimitrova, T., et al.. (1994). Thin thermal SiO2 after NH3 or N2O plasma action under plasma-enhanced chemical vapor deposition conditions. Thin Solid Films. 252(2). 89–97. 10 indexed citations

16.

Gesheva, K., et al.. (1993). Deposition and study of CVD—tungsten and molybdenum thin films and their impact on microelectronics technology. Applied Surface Science. 73. 86–89. 11 indexed citations

17.

Beshkov, G., et al.. (1991). Structural study of diamond-like films onto silicon. Materials Science and Engineering B. 10(2). 91–93. 1 indexed citations

18.

Gesheva, K., et al.. (1991). CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIRSILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY. Journal de Physique IV (Proceedings). 2(C2). C2–865. 7 indexed citations

19.

Gueorguiev, V.K., et al.. (1991). Conductive-oxide-gate FET as a gas sensor. Sensors and Actuators B Chemical. 3(4). 273–277. 10 indexed citations

20.

Vitanov, P., et al.. (1976). Properties of silicon nitride films deposited by the SiH4-NH3 system, varying the ratio of NH3 to SiH4. 29(2). 183.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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