N. Stojadinović

1.9k total citations
119 papers, 1.3k citations indexed

About

N. Stojadinović is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, N. Stojadinović has authored 119 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Hardware and Architecture. Recurrent topics in N. Stojadinović's work include Semiconductor materials and devices (88 papers), Advancements in Semiconductor Devices and Circuit Design (85 papers) and Silicon Carbide Semiconductor Technologies (40 papers). N. Stojadinović is often cited by papers focused on Semiconductor materials and devices (88 papers), Advancements in Semiconductor Devices and Circuit Design (85 papers) and Silicon Carbide Semiconductor Technologies (40 papers). N. Stojadinović collaborates with scholars based in Serbia, Australia and Bulgaria. N. Stojadinović's co-authors include Sima Dimitrijev, Slobodan Mijalković, Zoran Prijić, V. Davidović, I. Manić, S. Djoric-Veljković, Danijel Danković, S. Golubović, Mile Stojčev and Milić M. Pejović and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

N. Stojadinović

115 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Stojadinović Serbia 18 1.2k 113 106 47 43 119 1.3k
R.C. Frye United States 20 1.4k 1.2× 95 0.8× 103 1.0× 265 5.6× 66 1.5× 129 1.6k
Duc T. Nguyen United States 11 333 0.3× 136 1.2× 54 0.5× 27 0.6× 30 0.7× 51 718
A. Nitayama Japan 18 1.4k 1.2× 184 1.6× 219 2.1× 162 3.4× 111 2.6× 71 1.7k
P.K. Chatterjee United States 19 1.2k 1.0× 184 1.6× 190 1.8× 106 2.3× 131 3.0× 68 1.3k
M. Rosmeulen Belgium 18 1.1k 0.9× 75 0.7× 195 1.8× 124 2.6× 26 0.6× 99 1.2k
D. Yost United States 12 640 0.5× 167 1.5× 32 0.3× 96 2.0× 30 0.7× 41 743
You Wang China 16 620 0.5× 277 2.5× 85 0.8× 37 0.8× 115 2.7× 66 856
M. Miura–Mattausch Japan 20 1.6k 1.4× 171 1.5× 76 0.7× 164 3.5× 46 1.1× 221 1.8k
J. Salter United States 5 467 0.4× 228 2.0× 80 0.8× 34 0.7× 20 0.5× 6 626
A. Spessot Belgium 19 1.5k 1.2× 153 1.4× 159 1.5× 223 4.7× 118 2.7× 113 1.6k

Countries citing papers authored by N. Stojadinović

Since Specialization
Citations

This map shows the geographic impact of N. Stojadinović's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Stojadinović with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Stojadinović more than expected).

Fields of papers citing papers by N. Stojadinović

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Stojadinović. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Stojadinović. The network helps show where N. Stojadinović may publish in the future.

Co-authorship network of co-authors of N. Stojadinović

This figure shows the co-authorship network connecting the top 25 collaborators of N. Stojadinović. A scholar is included among the top collaborators of N. Stojadinović based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Stojadinović. N. Stojadinović is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Danković, Danijel, Nikola Mitrović, Zoran Prijić, & N. Stojadinović. (2020). Modeling of NBTS Effects in P-Channel Power VDMOSFETs. IEEE Transactions on Device and Materials Reliability. 20(1). 204–213. 27 indexed citations
2.
Davidović, V., Danijel Danković, Snežana Golubović, et al.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. Facta universitatis - series Electronics and Energetics. 31(3). 367–388. 13 indexed citations
3.
Djoric-Veljković, S., I. Manić, V. Davidović, et al.. (2015). Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors. Japanese Journal of Applied Physics. 54(6). 64101–64101. 1 indexed citations
4.
Atanassova, E., N. Stojadinović, D. Spassov, I. Manić, & A. Paskaleva. (2013). 純及びAl軽ドープTa 2 O 5 スタックにおける時間依存絶縁破壊. Semiconductor Science and Technology. 28(5). 1–9. 15 indexed citations
5.
Davidović, V., D.N. Kouvatsos, N. Stojadinović, & Apostolos T. Voutsas. (2007). Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors. Microelectronics Reliability. 47(9-11). 1841–1845. 11 indexed citations
6.
Stojadinović, N., I. Manić, V. Davidović, et al.. (2004). Effects of electrical stressing in power VDMOSFETs. 291–296. 9 indexed citations
7.
Pavlovic, Zoran, et al.. (1999). Temperature distribution in the cells of low-voltage power VDMOS transistor. Microelectronics Journal. 30(2). 109–113. 2 indexed citations
8.
Pantić, D., et al.. (1995). Optimization of Power VDMOSFET's Process Parameters by Neural Networks. European Solid-State Device Research Conference. 793–796. 2 indexed citations
9.
Stojadinović, N., et al.. (1995). Effect of radiation-induced oxide-trapped chargeonmobility in p -channel MOSFETs. Electronics Letters. 31(6). 497–498. 6 indexed citations
10.
Radjenović, Branislav, et al.. (1995). The contribution of border traps to the threshold voltage shift in pMOS dosimetric transistors. IEEE Transactions on Nuclear Science. 42(4). 1445–1454. 37 indexed citations
11.
Stojadinović, N., et al.. (1993). Reliability of polysilicon thin film resistors with irreversible resistance transition. Microelectronics Reliability. 33(6). 785–791. 1 indexed citations
12.
Stamenković, Zoran, Sima Dimitrijev, & N. Stojadinović. (1993). Integrated circuit production yield assurance based on yield analysis. Microelectronics Journal. 24(7). 819–822. 2 indexed citations
13.
Mijalković, Slobodan, et al.. (1991). MUSIC — A MULTIGRID SIMULATOR FOR IC FABRICATION PROCESSES. COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 10(4). 599–609. 3 indexed citations
14.
Dimitrijev, Sima, et al.. (1989). Analysis of gamma-radiation induced instability mechanisms in CMOS transistors. Solid-State Electronics. 32(5). 349–353. 40 indexed citations
15.
Golubović, S., et al.. (1987). Gamma-Radiation Effects in CMOS Transistors. European Solid-State Device Research Conference. 725–728. 5 indexed citations
16.
Stojadinović, N., Sima Dimitrijev, & Slobodan Mijalković. (1985). Effects of high field stresses on threshold voltage of CMOS transistors. Microelectronics Reliability. 25(2). 275–279. 4 indexed citations
17.
Stojadinović, N.. (1983). Effects of accelerated temperature testing on the low-frequency noise of planar NPN transistors. Microelectronics Reliability. 23(5). 899–901. 2 indexed citations
18.
Stojadinović, N., et al.. (1983). Failure physics of integrated circuits and relationship to reliability. physica status solidi (a). 75(1). 11–48. 3 indexed citations
19.
Stojadinović, N. & R.S. Popović. (1979). A new method for elimination of emitter edge dislocations of silicon planar NPN transitors. physica status solidi (a). 55(1). 307–313. 2 indexed citations
20.
Popović, R.S. & N. Stojadinović. (1979). Dependence of dislocations on emitter phosphorus diffusion conditions and their effects on electrical characteristics of silicon planar NPN transistors. physica status solidi (a). 52(2). 433–440. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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