I. Manić

1.1k total citations
56 papers, 578 citations indexed

About

I. Manić is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanical Engineering. According to data from OpenAlex, I. Manić has authored 56 papers receiving a total of 578 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 2 papers in Materials Chemistry and 1 paper in Mechanical Engineering. Recurrent topics in I. Manić's work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Silicon Carbide Semiconductor Technologies (31 papers). I. Manić is often cited by papers focused on Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers) and Silicon Carbide Semiconductor Technologies (31 papers). I. Manić collaborates with scholars based in Serbia, Australia and Bulgaria. I. Manić's co-authors include V. Davidović, S. Djoric-Veljković, Danijel Danković, N. Stojadinović, S. Golubović, Zoran Prijić, Snežana Golubović, Aneta Prijić, Sima Dimitrijev and D. Spassov and has published in prestigious journals such as Japanese Journal of Applied Physics, Electronics Letters and Measurement Science and Technology.

In The Last Decade

I. Manić

53 papers receiving 553 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Manić Serbia 14 550 22 16 9 7 56 578
X. J. Zhou United States 6 255 0.5× 24 1.1× 21 1.3× 8 0.9× 5 0.7× 10 264
M. DeLaus United States 7 675 1.2× 37 1.7× 22 1.4× 5 0.6× 11 1.6× 13 680
V. Davidović Serbia 15 596 1.1× 28 1.3× 12 0.8× 6 0.7× 2 0.3× 69 631
C. Dachs Belgium 11 510 0.9× 16 0.7× 23 1.4× 2 0.2× 5 0.7× 29 516
D Platteter United States 14 458 0.8× 52 2.4× 5 0.3× 9 1.0× 6 0.9× 21 468
G.H. Johnson United States 10 529 1.0× 24 1.1× 5 0.3× 4 0.4× 13 1.9× 20 546
M. Simons United States 13 333 0.6× 30 1.4× 28 1.8× 3 0.3× 6 0.9× 30 343
N. Revil France 10 413 0.8× 36 1.6× 24 1.5× 5 0.6× 7 1.0× 47 418
G.W. Dunham United States 12 415 0.8× 48 2.2× 5 0.3× 12 1.3× 2 0.3× 16 426
H.-R. Chang United States 11 310 0.6× 8 0.4× 27 1.7× 9 1.0× 2 0.3× 36 343

Countries citing papers authored by I. Manić

Since Specialization
Citations

This map shows the geographic impact of I. Manić's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Manić with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Manić more than expected).

Fields of papers citing papers by I. Manić

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Manić. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Manić. The network helps show where I. Manić may publish in the future.

Co-authorship network of co-authors of I. Manić

This figure shows the co-authorship network connecting the top 25 collaborators of I. Manić. A scholar is included among the top collaborators of I. Manić based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Manić. I. Manić is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Veljković, Sandra, Nikola Mitrović, S. Djoric-Veljković, et al.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. VinaR (Institute of Nuclear Sciences "Vinča"). 14. 345–350. 7 indexed citations
2.
Davidović, V., Danijel Danković, Snežana Golubović, et al.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. Facta universitatis - series Electronics and Energetics. 31(3). 367–388. 13 indexed citations
3.
Djoric-Veljković, S., I. Manić, V. Davidović, et al.. (2015). Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors. Japanese Journal of Applied Physics. 54(6). 64101–64101. 1 indexed citations
4.
Danković, Danijel, N. Stojadinović, Zoran Prijić, et al.. (2015). Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET. Chinese Physics B. 24(10). 106601–106601. 11 indexed citations
5.
Atanassova, E., N. Stojadinović, D. Spassov, I. Manić, & A. Paskaleva. (2013). 純及びAl軽ドープTa 2 O 5 スタックにおける時間依存絶縁破壊. Semiconductor Science and Technology. 28(5). 1–9. 15 indexed citations
6.
Manić, I., Danijel Danković, Aneta Prijić, et al.. (2011). NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. Microelectronics Reliability. 51(9-11). 1540–1543. 15 indexed citations
7.
Djoric-Veljković, S., et al.. (2011). Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs. Nuclear Technology and Radiation Protection. 26(1). 18–24. 12 indexed citations
8.
Manić, I., E. Atanassova, N. Stojadinović, D. Spassov, & A. Paskaleva. (2010). Hf-doped Ta2O5 stacks under constant voltage stress. Microelectronic Engineering. 88(3). 305–313. 5 indexed citations
9.
Manić, I., et al.. (2009). Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectronics Reliability. 49(9-11). 1003–1007. 14 indexed citations
10.
Manić, I., S. Djoric-Veljković, V. Davidović, et al.. (2008). Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs. IET Circuits Devices & Systems. 2(2). 213–221. 5 indexed citations
11.
Stojadinović, N., Danijel Danković, I. Manić, et al.. (2007). Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power VDMOSFETs. 275–282. 14 indexed citations
12.
Danković, Danijel, I. Manić, S. Djoric-Veljković, et al.. (2006). Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs. 45. 605–608. 6 indexed citations
13.
Manić, I., S. Djoric-Veljković, V. Davidović, et al.. (2006). Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs. 43. 599–604. 1 indexed citations
14.
Stojadinović, N., I. Manić, V. Davidović, et al.. (2004). Effects of electrical stressing in power VDMOSFETs. 291–296. 9 indexed citations
15.
Stojadinović, N., I. Manić, V. Davidović, et al.. (2004). Effects of electrical stressing in power VDMOSFETs. Microelectronics Reliability. 45(1). 115–122. 32 indexed citations
16.
Stojadinović, N., I. Manić, V. Davidović, et al.. (2003). Effects of gate bias stressing in power vdmosfets. Serbian Journal of Electrical Engineering. 1(1). 89–101. 7 indexed citations
17.
Stojadinović, N., S. Djoric-Veljković, I. Manić, V. Davidović, & S. Golubović. (2002). Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs. an 966. 243–248. 2 indexed citations
18.
Stojadinović, N., I. Manić, S. Djoric-Veljković, et al.. (2001). Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectronics Reliability. 41(9-10). 1373–1378. 34 indexed citations
19.
Manić, I., Zoran Pavlovic, Zoran Prijić, V. Davidović, & N. Stojadinović. (2001). Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors. Microelectronics Journal. 32(5-6). 485–490. 4 indexed citations
20.
Pavlovic, Zoran, et al.. (1999). Temperature distribution in the cells of low-voltage power VDMOS transistor. Microelectronics Journal. 30(2). 109–113. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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