G. Pelous

986 total citations
32 papers, 782 citations indexed

About

G. Pelous is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Pelous has authored 32 papers receiving a total of 782 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in G. Pelous's work include Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (10 papers). G. Pelous is often cited by papers focused on Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (12 papers) and Silicon and Solar Cell Technologies (10 papers). G. Pelous collaborates with scholars based in France, Germany and United Kingdom. G. Pelous's co-authors include A. Guivarc’h, A. Piotrowska, D. Lecrosnier, P Auvray, P. Hénoc, H. L’Haridon, M. Salvi, Alexandre Souto Martinêz, G. Hollinger and P. Pertosa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

G. Pelous

31 papers receiving 678 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Pelous France	16	647	544	153	95	76	32	782
F. Nava Italy	14	576 0.9×	341 0.6×	120 0.8×	46 0.5×	82 1.1×	37	752
K. E. Strege United States	11	358 0.6×	343 0.6×	116 0.8×	36 0.4×	42 0.6×	18	508
G. F. A. van de Walle Netherlands	18	812 1.3×	689 1.3×	269 1.8×	202 2.1×	25 0.3×	45	1.0k
C. van Opdorp Netherlands	15	525 0.8×	405 0.7×	182 1.2×	63 0.7×	28 0.4×	30	702
K. Graff Germany	11	948 1.5×	533 1.0×	218 1.4×	102 1.1×	16 0.2×	20	1.0k
O. K. Wu United States	17	585 0.9×	404 0.7×	151 1.0×	33 0.3×	27 0.4×	58	648
M. Quillec France	16	746 1.2×	782 1.4×	264 1.7×	38 0.4×	27 0.4×	61	982
Morio Inoue Japan	11	536 0.8×	165 0.3×	252 1.6×	45 0.5×	30 0.4×	55	620
M. A. G. Halliwell United Kingdom	13	397 0.6×	453 0.8×	238 1.6×	54 0.6×	28 0.4×	32	648
C. d’Anterroches France	17	595 0.9×	706 1.3×	248 1.6×	65 0.7×	66 0.9×	45	960

Countries citing papers authored by G. Pelous

Since Specialization

Citations

This map shows the geographic impact of G. Pelous's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Pelous with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Pelous more than expected).

Fields of papers citing papers by G. Pelous

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Pelous. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Pelous. The network helps show where G. Pelous may publish in the future.

Co-authorship network of co-authors of G. Pelous

This figure shows the co-authorship network connecting the top 25 collaborators of G. Pelous. A scholar is included among the top collaborators of G. Pelous based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Pelous. G. Pelous is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Pelous, G., et al.. (1999). <title>Remote detection of natural gas clouds in open fields by IR imagery</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5 indexed citations

Pelous, G., et al.. (1999). <title>Passive standoff detection of gas clouds in open field by IR imagery</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3533. 86–92. 5 indexed citations

Pelous, G., et al.. (1991). <title>IC rewiring by laser microchemistry</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1598. 149–158. 3 indexed citations

Tonneau, D., Y. Guern, & G. Pelous. (1989). Laser Microchemistry : A Powerful Tool For VLSI. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1138. 184–184. 1 indexed citations

Contour, J. P., et al.. (1986). GaAlAs/GaAs solar cells grown by molecular beam epitaxy: Material properties and device parameters. Solar Cells. 17(2-3). 373–381. 8 indexed citations

Leroux, M., G. Pelous, Frédéric Raymond, & C. Vèrié. (1985). Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs. Applied Physics Letters. 46(3). 288–290. 24 indexed citations

L’Haridon, H., M. Gauneau, A. Guivarc’h, et al.. (1985). Mixage ionique sur des structures Au/InP. Thin Solid Films. 123(2). 145–157. 2 indexed citations

Lambert, B., et al.. (1983). Properties of vanadium in InP. Solid State Communications. 47(5). 337–340. 16 indexed citations

Piotrowska, A., A. Guivarc’h, & G. Pelous. (1983). Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques. Solid-State Electronics. 26(3). 179–197. 150 indexed citations

10.

Auvray, P, A. Guivarc’h, H. L’Haridon, et al.. (1982). Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature. Journal of Applied Physics. 53(9). 6202–6207. 42 indexed citations

11.

Salvi, M., P.N. Favennec, H. L’Haridon, & G. Pelous. (1982). Composition of anodic oxides grown on InP. Thin Solid Films. 87(1). 13–16. 3 indexed citations

12.

Lecrosnier, D., et al.. (1981). Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations. Journal of Applied Physics. 52(8). 5090–5097. 67 indexed citations

13.

Lecrosnier, D., et al.. (1980). Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon. Journal of Applied Physics. 51(2). 1036–1038. 25 indexed citations

14.

Martinêz, Alexandre Souto, D. Estève, A. Guivarc’h, et al.. (1980). Metallurgical and electrical properties of chromium silicon interfaces. Solid-State Electronics. 23(1). 55–64. 49 indexed citations

15.

Auvray, P, et al.. (1980). Study of buried silicon nitride layers synthesized by ion implantation. Journal of Applied Physics. 51(12). 6169–6175. 45 indexed citations

16.

Toulouse, B., P.N. Favennec, A. Guivarc’h, & G. Pelous. (1979). Physicochemical and resistivity studies of boron-implanted GaAs. 1 indexed citations

17.

Lecrosnier, D., et al.. (1979). Long-range enhancement of boron diffusivity induced by a high-surface-concentration phosphorus diffusion. Applied Physics Letters. 34(3). 224–226. 15 indexed citations

18.

Guivarc’h, A., et al.. (1978). Reaction kinetics of molybdenum thin films on silicon (111) surface. Journal of Applied Physics. 49(1). 233–237. 76 indexed citations

19.

Lecrosnier, D., et al.. (1977). Investigation of ion-implantation damage with x-ray double reflection. Applied Physics Letters. 30(3). 141–143. 10 indexed citations

20.

Lecrosnier, D. & G. Pelous. (1974). Ion-implanted FET for power applications. IEEE Transactions on Electron Devices. 21(1). 113–118. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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