Changhyuck Sung

1.0k total citations
21 papers, 871 citations indexed

About

Changhyuck Sung is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Polymers and Plastics. According to data from OpenAlex, Changhyuck Sung has authored 21 papers receiving a total of 871 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 6 papers in Cellular and Molecular Neuroscience and 6 papers in Polymers and Plastics. Recurrent topics in Changhyuck Sung's work include Advanced Memory and Neural Computing (20 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Semiconductor materials and devices (9 papers). Changhyuck Sung is often cited by papers focused on Advanced Memory and Neural Computing (20 papers), Ferroelectric and Negative Capacitance Devices (13 papers) and Semiconductor materials and devices (9 papers). Changhyuck Sung collaborates with scholars based in South Korea, Italy and France. Changhyuck Sung's co-authors include Hyunsang Hwang, Seokjae Lim, Jeonghwan Song, In Kyeong Yoo, Kibong Moon, Jae-Hyuk Park, Jongmyung Yoo, Jungyul Park, Seungyeol Oh and Jiyong Woo and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Nanotechnology.

In The Last Decade

Changhyuck Sung

21 papers receiving 860 citations

Peers

Countries citing papers authored by Changhyuck Sung

Since Specialization

Citations

This map shows the geographic impact of Changhyuck Sung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Changhyuck Sung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Changhyuck Sung more than expected).

Fields of papers citing papers by Changhyuck Sung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Changhyuck Sung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Changhyuck Sung. The network helps show where Changhyuck Sung may publish in the future.

Co-authorship network of co-authors of Changhyuck Sung

This figure shows the co-authorship network connecting the top 25 collaborators of Changhyuck Sung. A scholar is included among the top collaborators of Changhyuck Sung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Changhyuck Sung. Changhyuck Sung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory 2024 ·IEEE Transactions on Electron Devices ·Zehao Lin, (unknown), Chang Niu, Hongyi Dou, Ke Xu, (unknown), (unknown), Changhyuck Sung, (unknown), Daewon Ha, Haiyan Wang, Md Ashraful Alam, Peide D. Ye	4
2	Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications 2021 ·Advanced Electronic Materials ·Changhyuck Sung, Seong Hun Kim, (unknown), Donghwa Lee, Hyunsang Hwang	2
3	Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO₂ Layer 2021 ·Advanced Electronic Materials ·Seungwoo Lee, Writam Banerjee, Sangmin Lee, Changhyuck Sung, Hyunsang Hwang	18
4	Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device 2020 ·IEEE Electron Device Letters ·Changhyuck Sung, Seokjae Lim, Hyunsang Hwang	9
5	Investigation of $I-V$ Linearity in TaO_x-Based RRAM Devices for Neuromorphic Applications 2019 ·IEEE Journal of the Electron Devices Society ·Changhyuck Sung, Andrea Padovani, (unknown), Donguk Lee, (unknown), Seokjae Lim, Luca Larcher, (unknown), Hyunsang Hwang	21
6	Various Threshold Switching Devices for Integrate and Fire Neuron Applications 2019 ·Advanced Electronic Materials ·Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jae-Hyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung, Writam Banerjee, Hyunsang Hwang	134
7	3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications 2019 ·Advanced Electronic Materials ·Jongmyung Yoo, Seong Hun Kim, Solomon Amsalu Chekol, Jae-Hyuk Park, Changhyuck Sung, Jeonghwan Song, Donghwa Lee, Hyunsang Hwang	39
8	Ultra-thin <10nm) Dual-oxide (Al₂O₃/TiO₂) Hybrid Device (Memory/Selector) with Extremely Low I_off <1nA) and I_reset <1nA) for 3D Storage Class Memory 2019 ·Changhyuck Sung, Jeonghwan Song, Donguk Lee, Seokjae Lim, (unknown), Hyunsang Hwang	3
9	Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array 2018 ·IEEE Electron Device Letters ·Jae-Hyuk Park, Jongmyung Yoo, Jeonghwan Song, Changhyuck Sung, Hyunsang Hwang	15
10	A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application 2018 ·Nanotechnology ·Solomon Amsalu Chekol, Jongmyung Yoo, Jae-Hyuk Park, Jeonghwan Song, Changhyuck Sung, Hyunsang Hwang	39
11	Effect of conductance linearity and multi-level cell characteristics of TaO_x-based synapse device on pattern recognition accuracy of neuromorphic system 2018 ·Nanotechnology ·Changhyuck Sung, Seokjae Lim, Hyungjun Kim, Taesu Kim, Kibong Moon, Jeonghwan Song, Jae‐Joon Kim, Hyunsang Hwang	35
12	Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems 2018 ·IEEE Electron Device Letters ·Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae‐Joon Kim, Hyunsang Hwang	61
13	Hardware implementation of neural network using pre-programmed resistive device for pattern recognition 2018 ·Solid-State Electronics ·Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee, Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang	11
14	Perspective: A review on memristive hardware for neuromorphic computation 2018 ·Journal of Applied Physics ·Changhyuck Sung, Hyunsang Hwang, In Kyeong Yoo	158
15	NbO₂-Based Frequency Storable Coupled Oscillators for Associative Memory Application 2018 ·IEEE Journal of the Electron Devices Society ·Donguk Lee, Euijun Cha, Jae-Hyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amsalu Chekol, Hyunsang Hwang	15
16	RRAM-based synapse devices for neuromorphic systems 2018 ·Faraday Discussions ·Kibong Moon, Seokjae Lim, Jungyul Park, Changhyuck Sung, Seungyeol Oh, Jiyong Woo, J. Lee, Hyunsang Hwang	204
17	Effects of Liner Thickness on the Reliability of AgTe/TiO₂-Based Threshold Switching Devices 2017 ·IEEE Transactions on Electron Devices ·Jeonghwan Song, Jiyong Woo, Jongmyung Yoo, Solomon Amsalu Chekol, Seokjae Lim, Changhyuck Sung, Hyunsang Hwang	31
18	Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory 2017 ·Nanotechnology ·(unknown), Jiyong Woo, Jeonghwan Song, Jae-Hyuk Park, (unknown), Changhyuck Sung, Hyunsang Hwang	36
19	Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown 2016 ·Changhyuck Sung, Jeonghwan Song, Sang‐Heon Lee, Hyunsang Hwang	6
20	Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) 2016 ·AIP Advances ·(unknown), Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jae-Hyuk Park, (unknown), Changhyuck Sung, Hyunsang Hwang	28

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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