Elia Ambrosi

1.8k total citations
34 papers, 1.4k citations indexed

About

Elia Ambrosi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Elia Ambrosi has authored 34 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 7 papers in Cellular and Molecular Neuroscience. Recurrent topics in Elia Ambrosi's work include Advanced Memory and Neural Computing (32 papers), Ferroelectric and Negative Capacitance Devices (21 papers) and Phase-change materials and chalcogenides (9 papers). Elia Ambrosi is often cited by papers focused on Advanced Memory and Neural Computing (32 papers), Ferroelectric and Negative Capacitance Devices (21 papers) and Phase-change materials and chalcogenides (9 papers). Elia Ambrosi collaborates with scholars based in Italy, Taiwan and United States. Elia Ambrosi's co-authors include Daniele Ielmini, Alessandro Bricalli, Zhong Sun, Mario Laudato, Wei Wang, Giacomo Pedretti, Xiaodong Chen, Ming Wang, Erika Covi and R. Rodrı́guez and has published in prestigious journals such as Proceedings of the National Academy of Sciences, Advanced Materials and Nature Communications.

In The Last Decade

Elia Ambrosi

33 papers receiving 1.4k citations

Peers

Elia Ambrosi
YeonJoo Jeong South Korea
Sukru Burc Eryilmaz United States
Zhong Sun China
Jihang Lee United States
H-S Philip Wong United States
Nirmal Ramaswamy United States
S. R. Nandakumar United States
Elia Ambrosi
Citations per year, relative to Elia Ambrosi Elia Ambrosi (= 1×) peers Alessandro Bricalli

Countries citing papers authored by Elia Ambrosi

Since Specialization
Citations

This map shows the geographic impact of Elia Ambrosi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Elia Ambrosi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Elia Ambrosi more than expected).

Fields of papers citing papers by Elia Ambrosi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Elia Ambrosi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Elia Ambrosi. The network helps show where Elia Ambrosi may publish in the future.

Co-authorship network of co-authors of Elia Ambrosi

This figure shows the co-authorship network connecting the top 25 collaborators of Elia Ambrosi. A scholar is included among the top collaborators of Elia Ambrosi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Elia Ambrosi. Elia Ambrosi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ambrosi, Elia, et al.. (2024). Chalcogenide Selectors for Low Voltage and High Density Memory Applications. 1–2. 1 indexed citations
2.
Ambrosi, Elia, et al.. (2024). Ultrafast ~7 Mbps True Random Number Generator Based on SNGCT Selector. IEEE Transactions on Electron Devices. 71(4). 2794–2800.
3.
Chen, Kuo-Lung, Chih‐Yang Lin, Elia Ambrosi, et al.. (2023). High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications. 1–4. 8 indexed citations
4.
Datye, Isha, Sam Vaziri, Elia Ambrosi, et al.. (2023). Forming-Free Selectors Based on Te in an Insulating SiO x Matrix. IEEE Transactions on Electron Devices. 71(1). 530–535. 1 indexed citations
5.
Liao, P. J., et al.. (2022). Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector. 4A.3–1. 6 indexed citations
6.
Ambrosi, Elia, Cheng‐Hsien Wu, Chen-Feng Hsu, et al.. (2022). Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors. 2022 International Electron Devices Meeting (IEDM). 18.7.1–18.7.4. 5 indexed citations
7.
Ambrosi, Elia, et al.. (2021). Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 10 11 ) for High Density 1S1R Memory Array. Symposium on VLSI Technology. 1–2. 3 indexed citations
8.
Wang, Wei, Erika Covi, Yu‐Hsuan Lin, et al.. (2021). Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling. IEEE Transactions on Electron Devices. 68(9). 4342–4349. 37 indexed citations
9.
Covi, Erika, Wei Wang, Yu‐Hsuan Lin, et al.. (2021). Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization. IEEE Transactions on Electron Devices. 68(9). 4335–4341. 33 indexed citations
10.
Sun, Zhong, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, & Daniele Ielmini. (2020). In-memory PageRank using a Crosspoint Array of Resistive Switching Memory (RRAM) devices. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 22. 26–30. 1 indexed citations
11.
Wang, Wei, Ming Wang, Elia Ambrosi, et al.. (2019). Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nature Communications. 10(1). 81–81. 270 indexed citations
12.
Covi, Erika, Yu‐Hsuan Lin, Wei Wang, et al.. (2019). A Volatile RRAM Synapse for Neuromorphic Computing. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 903–906. 22 indexed citations
13.
Wang, Wei, Erika Covi, Yu‐Hsuan Lin, Elia Ambrosi, & Daniele Ielmini. (2019). Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 32.3.1–32.3.4. 10 indexed citations
14.
Sun, Zhong, Giacomo Pedretti, Elia Ambrosi, et al.. (2019). In-memory solution of linear systems with crosspoint arrays without iterations. 521. 215–216. 3 indexed citations
15.
Sun, Zhong, Giacomo Pedretti, Elia Ambrosi, et al.. (2019). Solving matrix equations in one step with cross-point resistive arrays. Proceedings of the National Academy of Sciences. 116(10). 4123–4128. 185 indexed citations
16.
Laudato, Mario, et al.. (2019). Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 126–129. 2 indexed citations
17.
Milo, Valerio, Giacomo Pedretti, Mario Laudato, et al.. (2018). Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 1–5. 12 indexed citations
18.
Ambrosi, Elia, Alessandro Bricalli, Mario Laudato, & Daniele Ielmini. (2018). Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices. Faraday Discussions. 213(0). 87–98. 82 indexed citations
19.
Sun, Zhong, Elia Ambrosi, Alessandro Bricalli, & Daniele Ielmini. (2018). Logic Computing with Stateful Neural Networks of Resistive Switches. Advanced Materials. 30(38). e1802554–e1802554. 132 indexed citations
20.
Bricalli, Alessandro, et al.. (2017). Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices. IEEE Transactions on Electron Devices. 65(1). 122–128. 62 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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