Seokjae Lim

1.6k total citations
39 papers, 1.3k citations indexed

About

Seokjae Lim is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Polymers and Plastics. According to data from OpenAlex, Seokjae Lim has authored 39 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 11 papers in Cellular and Molecular Neuroscience and 8 papers in Polymers and Plastics. Recurrent topics in Seokjae Lim's work include Advanced Memory and Neural Computing (30 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Semiconductor materials and devices (12 papers). Seokjae Lim is often cited by papers focused on Advanced Memory and Neural Computing (30 papers), Ferroelectric and Negative Capacitance Devices (19 papers) and Semiconductor materials and devices (12 papers). Seokjae Lim collaborates with scholars based in South Korea, United States and Italy. Seokjae Lim's co-authors include Hyunsang Hwang, G. K. Singh, Kwanghee Nam, Jeonghwan Song, Kwanghee Nam, Changhyuck Sung, Kibong Moon, Jongmyung Yoo, Jae-Hyuk Park and Jiyong Woo and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Industrial Electronics and Sensors and Actuators B Chemical.

In The Last Decade

Seokjae Lim

38 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seokjae Lim South Korea 18 1.3k 387 210 120 116 39 1.3k
Zefan Li China 9 626 0.5× 304 0.8× 151 0.7× 85 0.7× 64 0.6× 13 819
Youhui Chen China 9 709 0.5× 273 0.7× 318 1.5× 138 1.1× 174 1.5× 13 1.0k
Mohit Rameshchandra Kulkarni Singapore 14 1.1k 0.9× 498 1.3× 433 2.1× 210 1.8× 207 1.8× 18 1.4k
Tun Zainal Azni Zulkifli Malaysia 8 858 0.7× 159 0.4× 158 0.8× 175 1.5× 34 0.3× 47 1.0k
Jianhui Zhao China 9 862 0.7× 366 0.9× 198 0.9× 261 2.2× 51 0.4× 14 910
Massimo Barbaro Italy 22 743 0.6× 238 0.6× 364 1.7× 61 0.5× 125 1.1× 80 1.2k
Myungsoo Seo South Korea 12 775 0.6× 149 0.4× 244 1.2× 124 1.0× 39 0.3× 20 864
Zongliang Huo China 19 1.8k 1.3× 391 1.0× 318 1.5× 454 3.8× 44 0.4× 149 1.9k
Wooseok Choi South Korea 15 606 0.5× 146 0.4× 94 0.4× 138 1.1× 57 0.5× 59 760
Zheng Ren China 14 548 0.4× 310 0.8× 129 0.6× 33 0.3× 88 0.8× 47 625

Countries citing papers authored by Seokjae Lim

Since Specialization
Citations

This map shows the geographic impact of Seokjae Lim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seokjae Lim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seokjae Lim more than expected).

Fields of papers citing papers by Seokjae Lim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seokjae Lim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seokjae Lim. The network helps show where Seokjae Lim may publish in the future.

Co-authorship network of co-authors of Seokjae Lim

This figure shows the co-authorship network connecting the top 25 collaborators of Seokjae Lim. A scholar is included among the top collaborators of Seokjae Lim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seokjae Lim. Seokjae Lim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Eunjin, et al.. (2025). Optimizing electrochemical and ferroelectric synaptic devices: from material selection to performance tuning. Neuromorphic Computing and Engineering. 5(1). 13001–13001. 1 indexed citations
2.
Lim, Seokjae, et al.. (2025). WOx Interlayer Engineering for Reliable Polarization in HfZrO2 Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 72(9). 4878–4883.
3.
Lim, Seokjae, et al.. (2025). Label-free multiplexed protein quantification in clinical samples using encodable hydrogel barcode and low-aspect-ratio micropore. Sensors and Actuators B Chemical. 432. 137496–137496. 2 indexed citations
4.
5.
Choi, Wooseok, Donguk Lee, Seokjae Lim, et al.. (2020). WOx-Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks. IEEE Transactions on Nanotechnology. 19. 594–600. 17 indexed citations
6.
Sung, Changhyuck, Seokjae Lim, & Hyunsang Hwang. (2020). Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device. IEEE Electron Device Letters. 41(5). 713–716. 9 indexed citations
7.
Lee, Jongwon, Revannath Dnyandeo Nikam, Seokjae Lim, Myonghoon Kwak, & Hyunsang Hwang. (2020). Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO 2.7 stoichiometry with high ion diffusivity. Nanotechnology. 31(23). 235203–235203. 40 indexed citations
8.
Lee, Jongwon, Seokjae Lim, Myonghoon Kwak, Jeonghwan Song, & Hyunsang Hwang. (2019). Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems. Nanotechnology. 30(25). 255202–255202. 36 indexed citations
9.
Sung, Changhyuck, Andrea Padovani, Donguk Lee, et al.. (2019). Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications. IEEE Journal of the Electron Devices Society. 7. 404–408. 21 indexed citations
10.
Lim, Seokjae, et al.. (2019). One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices. Nanotechnology. 30(45). 455201–455201. 8 indexed citations
11.
Park, Jaesung, Chuljun Lee, Solomon Amsalu Chekol, et al.. (2019). Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes. Nanotechnology. 30(30). 305202–305202. 21 indexed citations
12.
Sung, Changhyuck, Seokjae Lim, Hyungjun Kim, et al.. (2018). Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system. Nanotechnology. 29(11). 115203–115203. 35 indexed citations
13.
Lim, Seokjae, Changhyuck Sung, Hyungjun Kim, et al.. (2018). Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems. IEEE Electron Device Letters. 39(2). 312–315. 61 indexed citations
14.
Lim, Seokjae, et al.. (2018). Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems. IEEE Transactions on Electron Devices. 65(9). 3976–3981. 37 indexed citations
15.
Lim, Seokjae, Jongmyung Yoo, Jeonghwan Song, et al.. (2018). CMOS compatible low-power volatile atomic switch for steep-slope FET devices. Applied Physics Letters. 113(3). 7 indexed citations
16.
Song, Jeonghwan, Jiyong Woo, Jongmyung Yoo, et al.. (2017). Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices. IEEE Transactions on Electron Devices. 64(11). 4763–4767. 31 indexed citations
17.
Song, Jeonghwan, Jae-Hyuk Park, Kibong Moon, et al.. (2016). Monolithic integration of AgTe/TiO<inf>2</inf> based threshold switching device with TiN liner for steep slope field-effect transistors. 25.3.1–25.3.4. 32 indexed citations
18.
Park, Jaesung, Jiyong Woo, Amit Prakash, et al.. (2016). Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier. AIP Advances. 6(5). 9 indexed citations
19.
Singh, G. K., Kwanghee Nam, & Seokjae Lim. (2005). A Simple Indirect Field-Oriented Control Scheme for Multiphase Induction Machine. IEEE Transactions on Industrial Electronics. 52(4). 1177–1184. 237 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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