Benjamin Bunday

1.6k total citations
102 papers, 1.3k citations indexed

About

Benjamin Bunday is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Benjamin Bunday has authored 102 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 74 papers in Surfaces, Coatings and Films and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Benjamin Bunday's work include Advancements in Photolithography Techniques (76 papers), Electron and X-Ray Spectroscopy Techniques (58 papers) and Integrated Circuits and Semiconductor Failure Analysis (44 papers). Benjamin Bunday is often cited by papers focused on Advancements in Photolithography Techniques (76 papers), Electron and X-Ray Spectroscopy Techniques (58 papers) and Integrated Circuits and Semiconductor Failure Analysis (44 papers). Benjamin Bunday collaborates with scholars based in United States, Israel and Japan. Benjamin Bunday's co-authors include John S. Villarrubia, John A. Allgair, Chris A. Mack, Michael Bishop, Ravikiran Attota, András Vládar, Victor Vartanian, Thomas A. Germer, Ronald G. Dixson and Ndubuisi G. Orji and has published in prestigious journals such as Applied Physics Letters, Optics Express and Measurement Science and Technology.

In The Last Decade

Benjamin Bunday

96 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benjamin Bunday United States 21 922 634 394 284 215 102 1.3k
Ndubuisi G. Orji United States 17 594 0.6× 223 0.4× 376 1.0× 440 1.5× 160 0.7× 63 996
Alan E. Rosenbluth United States 15 474 0.5× 189 0.3× 300 0.8× 175 0.6× 128 0.6× 55 765
Jo Finders Netherlands 18 1.0k 1.1× 423 0.7× 318 0.8× 152 0.5× 41 0.2× 128 1.1k
Alfred K. K. Wong Hong Kong 18 1.2k 1.3× 240 0.4× 479 1.2× 97 0.3× 60 0.3× 62 1.3k
Scott Mansfield United States 12 745 0.8× 273 0.4× 714 1.8× 272 1.0× 38 0.2× 50 1.1k
Eelco van Setten Netherlands 20 849 0.9× 494 0.8× 207 0.5× 80 0.3× 46 0.2× 88 970
Donis G. Flagello United States 14 450 0.5× 172 0.3× 272 0.7× 119 0.4× 28 0.1× 60 564
Winfried Kaiser Germany 16 517 0.6× 268 0.4× 225 0.6× 79 0.3× 37 0.2× 35 656
Peter Evanschitzky Germany 17 790 0.9× 476 0.8× 162 0.4× 36 0.1× 40 0.2× 93 840
Andrew J. Waddie United Kingdom 18 666 0.7× 154 0.2× 351 0.9× 557 2.0× 125 0.6× 94 1.1k

Countries citing papers authored by Benjamin Bunday

Since Specialization
Citations

This map shows the geographic impact of Benjamin Bunday's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Bunday with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Bunday more than expected).

Fields of papers citing papers by Benjamin Bunday

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamin Bunday. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Bunday. The network helps show where Benjamin Bunday may publish in the future.

Co-authorship network of co-authors of Benjamin Bunday

This figure shows the co-authorship network connecting the top 25 collaborators of Benjamin Bunday. A scholar is included among the top collaborators of Benjamin Bunday based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benjamin Bunday. Benjamin Bunday is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bunday, Benjamin, et al.. (2022). Simulating process subtleties in SEM imaging. 19–19. 1 indexed citations
2.
Bunday, Benjamin, Ndubuisi G. Orji, & John A. Allgair. (2021). High volume manufacturing metrology needs at and beyond the 5 nm node. 9–9. 3 indexed citations
3.
Attota, Ravikiran, Hyeonggon Kang, Keana Scott, et al.. (2018). Nondestructive shape process monitoring of three-dimensional, high-aspect-ratio targets using through-focus scanning optical microscopy. Measurement Science and Technology. 29(12). 125007–125007. 15 indexed citations
4.
Bunday, Benjamin, et al.. (2017). In-line E-beam metrology and defect inspection: industry reflections, hybrid E-beam opportunities, recommendations and predictions. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10145. 101450R–101450R. 9 indexed citations
5.
Humphris, Andrew D. L., et al.. (2016). Probe microscopy for metrology of next generation devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9778. 97782L–97782L. 5 indexed citations
6.
Mack, Chris A. & Benjamin Bunday. (2015). Analytical linescan model for SEM metrology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9424. 94240F–94240F. 19 indexed citations
7.
Thiel, B. L., Benjamin Bunday, Stefan Wurm, et al.. (2015). Massively parallel E-beam inspection: enabling next-generation patterned defect inspection for wafer and mask manufacturing. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9423. 942319–942319. 21 indexed citations
8.
Bunday, Benjamin, Stefan Wurm, B. L. Thiel, et al.. (2015). Enabling future generation high-speed inspection through a massively parallel e-beam approach. 266–271. 3 indexed citations
9.
Bunday, Benjamin, et al.. (2015). Simulating massively parallel electron beam inspection for sub-20 nm defects. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9424. 94240J–94240J. 10 indexed citations
10.
Bunday, Benjamin, et al.. (2011). Experimental validation of 2D profile photoresist shrinkage model. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7971. 79710W–79710W. 22 indexed citations
11.
Bunday, Benjamin, et al.. (2011). Tool-to-tool matching issues due to photoresist shrinkage effects. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7971. 79710B–79710B. 7 indexed citations
12.
Bunday, Benjamin, et al.. (2010). Electron-beam induced photoresist shrinkage influence on 2D profiles. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7638. 76381L–76381L. 20 indexed citations
13.
Bunday, Benjamin, et al.. (2008). Phenomenology of ArF photoresist shrinkage trends. 3–6. 1 indexed citations
14.
Wang, Chengqing, Wei-En Fu, Derek Ho, et al.. (2008). CD-SAXS measurements using laboratory-based and synchrotron-based instruments. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6922. 69222E–69222E. 5 indexed citations
15.
Kotelyanskii, Michael, et al.. (2008). Characterization of sub-50-nm line array structures with angle-resolved multiple wavelength scatterometry. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6922. 69223N–69223N. 2 indexed citations
16.
Bunday, Benjamin, et al.. (2007). SEM metrology for advanced lithographies. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6518. 65182B–65182B. 6 indexed citations
17.
Bunday, Benjamin, John A. Allgair, Dilip Patel, et al.. (2007). Realizing "value-added" metrology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6518. 65181K–65181K. 6 indexed citations
18.
Allgair, John A., et al.. (2006). Litho-metrology challenges for the 45-nm technology node and beyond. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6152. 61520C–61520C. 4 indexed citations
19.
Bunday, Benjamin, Michael Bishop, John S. Villarrubia, et al.. (2004). Determination of optimal parameters for CD-SEM measurement of line-edge roughness. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5375. 515–515. 64 indexed citations
20.
Bunday, Benjamin, Michael Bishop, John S. Villarrubia, & András Vládar. (2003). CD-SEM measurement line-edge roughness test patterns for 193-nm lithography. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5038. 674–674. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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