Daewoong Kwon

3.3k total citations
69 papers, 1.5k citations indexed

About

Daewoong Kwon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Daewoong Kwon has authored 69 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 67 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 6 papers in Biomedical Engineering. Recurrent topics in Daewoong Kwon's work include Ferroelectric and Negative Capacitance Devices (61 papers), Semiconductor materials and devices (55 papers) and Advanced Memory and Neural Computing (29 papers). Daewoong Kwon is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (61 papers), Semiconductor materials and devices (55 papers) and Advanced Memory and Neural Computing (29 papers). Daewoong Kwon collaborates with scholars based in South Korea, United States and Luxembourg. Daewoong Kwon's co-authors include Sayeef Salahuddin, Chenming Hu, Ava J. Tan, Suraj Cheema, Korok Chatterjee, Sihyun Kim, Hyunwoo Kim, Kitae Lee, Ajay K. Yadav and Byung‐Gook Park and has published in prestigious journals such as Nature, Applied Physics Letters and Nano Energy.

In The Last Decade

Daewoong Kwon

68 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Daewoong Kwon South Korea 21 1.4k 702 174 121 62 69 1.5k
Tanushree H. Choudhury United States 18 929 0.7× 1.4k 2.0× 251 1.4× 103 0.9× 69 1.1× 42 1.7k
Kaizhen Han Singapore 20 975 0.7× 369 0.5× 134 0.8× 75 0.6× 48 0.8× 88 1.1k
Ivan Sanchez Esqueda United States 20 1.1k 0.8× 413 0.6× 86 0.5× 136 1.1× 92 1.5× 67 1.3k
Shengman Li China 14 805 0.6× 655 0.9× 199 1.1× 78 0.6× 47 0.8× 26 1.1k
Benjamin Grisafe United States 20 1.0k 0.7× 430 0.6× 117 0.7× 73 0.6× 80 1.3× 35 1.1k
Doeon Lee United States 16 499 0.4× 488 0.7× 131 0.8× 166 1.4× 56 0.9× 22 813
Daewon Ha South Korea 19 1.6k 1.2× 414 0.6× 184 1.1× 82 0.7× 21 0.3× 86 1.7k
Kirby K. H. Smithe United States 20 919 0.7× 1.4k 2.0× 311 1.8× 120 1.0× 27 0.4× 33 1.7k
Yuan‐Ming Chang Taiwan 13 497 0.4× 451 0.6× 120 0.7× 47 0.4× 77 1.2× 39 754

Countries citing papers authored by Daewoong Kwon

Since Specialization
Citations

This map shows the geographic impact of Daewoong Kwon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daewoong Kwon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daewoong Kwon more than expected).

Fields of papers citing papers by Daewoong Kwon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daewoong Kwon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daewoong Kwon. The network helps show where Daewoong Kwon may publish in the future.

Co-authorship network of co-authors of Daewoong Kwon

This figure shows the co-authorship network connecting the top 25 collaborators of Daewoong Kwon. A scholar is included among the top collaborators of Daewoong Kwon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daewoong Kwon. Daewoong Kwon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Park, Eun Chan, Jangsaeng Kim, Jonghyun Ko, et al.. (2025). Hafnia-based ferroelectric computer vision system with artificial synaptic array. Nano Energy. 139. 110877–110877. 2 indexed citations
2.
Nguyen, Manh-Cuong, Eun Chan Park, Rino Choi, Doo Seok Jeong, & Daewoong Kwon. (2025). Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array. ACS Applied Electronic Materials. 7(6). 2404–2412.
3.
Kim, Haesung, Sung‐Jin Choi, Dae Hwan Kim, et al.. (2024). Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell. IEEE Electron Device Letters. 45(4). 562–565. 4 indexed citations
4.
Park, Eun Chan, et al.. (2024). Tunable Ferroelectric Properties of HfO₂-Based Oxides: Role of Aluminum Doping and Bottom Electrodes. IEEE Transactions on Electron Devices. 72(2). 635–639. 2 indexed citations
5.
Kim, Jangsaeng, et al.. (2024). Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions. Advanced Electronic Materials. 11(2). 3 indexed citations
6.
Kim, Haesung, Sung‐Jin Choi, Dae Hwan Kim, et al.. (2024). Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer. Applied Physics Letters. 124(3). 2 indexed citations
7.
Kim, Jangsaeng, et al.. (2024). Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors. IEEE Electron Device Letters. 45(11). 2118–2121. 7 indexed citations
8.
Koo, Ryun‐Han, Wonjun Shin, Gyuweon Jung, et al.. (2024). Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity. Chaos Solitons & Fractals. 183. 114861–114861. 10 indexed citations
9.
Koo, Ryun‐Han, Wonjun Shin, Sangwoo Ryu, et al.. (2024). Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress. IEEE Electron Device Letters. 45(6). 1016–1019. 5 indexed citations
10.
Kim, Jeonghan, et al.. (2023). All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel. IEEE Electron Device Letters. 44(5). 749–752. 13 indexed citations
11.
Kim, Sangwoo, Wonjun Shin, Jeonghan Kim, et al.. (2023). Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer. IEEE Electron Device Letters. 44(12). 1955–1958. 9 indexed citations
12.
Kim, Hyun‐Min, et al.. (2023). Circular ferroelectric tunnel junctions for the improvement of memory window and endurance. Japanese Journal of Applied Physics. 62(SG). SG1044–SG1044. 1 indexed citations
13.
Kim, Jeonghan, et al.. (2022). Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO2. IEEE Transactions on Electron Devices. 69(6). 3499–3502. 9 indexed citations
14.
Kim, Hyunwoo, et al.. (2022). Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory. Semiconductor Science and Technology. 38(5). 55013–55013. 3 indexed citations
15.
Kim, Sihyun, et al.. (2021). Physical Unclonable Functions Using Ferroelectric Tunnel Junctions. IEEE Electron Device Letters. 42(6). 816–819. 13 indexed citations
16.
Yu, Junsu, Kyung Kyu Min, Yeonwoo Kim, et al.. (2021). A novel physical unclonable function (PUF) using 16 × 16 pure-HfO x ferroelectric tunnel junction array for security applications. Nanotechnology. 32(48). 485202–485202. 18 indexed citations
17.
Min, Kyung Kyu, Junsu Yu, Yeonwoo Kim, et al.. (2021). Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x -based metal-ferroelectric-insulator-semiconductor stack. Nanotechnology. 32(49). 495203–495203. 15 indexed citations
18.
Kim, Sihyun, Daewoong Kwon, Tae‐Hyeon Kim, et al.. (2021). Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors With Optimized Multi-Sensing Currents. IEEE Sensors Journal. 21(7). 8839–8846. 22 indexed citations
19.
Lee, Kitae, Sihyun Kim, Jong‐Ho Lee, Daewoong Kwon, & Byung‐Gook Park. (2020). Suppression of reverse drain induced barrier lowering in negative capacitance FDSOI field effect transistor using oxide charge trapping layer. Semiconductor Science and Technology. 35(12). 125003–125003. 7 indexed citations
20.
Yadav, Ajay K., Kayla X. Nguyen, Zijian Hong, et al.. (2019). Spatially resolved steady-state negative capacitance. Nature. 565(7740). 468–471. 287 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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