Guokun Ma

1.3k total citations
64 papers, 1.0k citations indexed

About

Guokun Ma is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Guokun Ma has authored 64 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 24 papers in Polymers and Plastics and 19 papers in Materials Chemistry. Recurrent topics in Guokun Ma's work include Advanced Memory and Neural Computing (43 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Transition Metal Oxide Nanomaterials (18 papers). Guokun Ma is often cited by papers focused on Advanced Memory and Neural Computing (43 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Transition Metal Oxide Nanomaterials (18 papers). Guokun Ma collaborates with scholars based in China, Taiwan and Australia. Guokun Ma's co-authors include Hao Wang, Jun Zhang, Hai Zhou, Huaiwu Zhang, Chunlei Liu, Tao Li, Zhiyong Zhong, Ao Chen, Houzhao Wan and Xiaoli Tang and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Guokun Ma

60 papers receiving 1.0k citations

Peers

Guokun Ma

EEE

EOMM

CMN

Cezhou Zhao China

Hagyoul Bae South Korea

Jenn-Chang Hwang Taiwan

Soo Gil Kim South Korea

Mrinal K. Hota India

Jer‐Chyi Wang Taiwan

Hsiao‐Hsuan Hsu Taiwan

Zhuojian Xiao China

Geun Woo Baek South Korea

Weng Fu Io Hong Kong

Cezhou Zhao China

Guokun Ma

1.5k ×1.7

EEE

416 ×1.0

254 ×0.9

340 ×1.8

EOMM

132 ×1.1

CMN

Citations per year, relative to Guokun Ma Guokun Ma (= 1×) peers Cezhou Zhao

Countries citing papers authored by Guokun Ma

Since Specialization

Citations

This map shows the geographic impact of Guokun Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Guokun Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Guokun Ma more than expected).

Fields of papers citing papers by Guokun Ma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Guokun Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Guokun Ma. The network helps show where Guokun Ma may publish in the future.

Co-authorship network of co-authors of Guokun Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Guokun Ma. A scholar is included among the top collaborators of Guokun Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Guokun Ma. Guokun Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ye, Tao, Dong Li, Ting Hu, et al.. (2025). Electric field-induced intramolecular charge transfer of two-dimensional covalent organic frameworks with D–A systems for organic memristors. Journal of Materials Chemistry C. 13(12). 6444–6452. 1 indexed citations

Tao, Ye, Ting Hu, Shaojie Zhang, et al.. (2024). Advances in two-dimensional heterojunction for sophisticated memristors. Materials Today Physics. 41. 101336–101336. 15 indexed citations

Wang, Hanbin, Guokun Ma, Houzhao Wan, et al.. (2024). A Flexible Nickel-Oxide-Based RRAM Device Prepared Using the Solution Combustion Method. Electronics. 13(6). 1042–1042. 4 indexed citations

Li, Dengfeng, Mingmin Zhu, Jinming Guo, et al.. (2024). Cu/MgO-based resistive random access memory for neuromorphic applications. Applied Physics Letters. 124(14). 6 indexed citations

Chen, Xiang, Jiayun Wei, Long Yan, et al.. (2024). Strongly stable resistive random access memory based on quasi-two-dimensional perovskites. Science China Materials. 67(3). 879–886. 3 indexed citations

Duan, Jinxia, Yi Yang, Houzhao Wan, et al.. (2023). High-efficiency α-FAPbI3 perovskite solar cells based on one-dimensional TiO2 nanorod array scaffolds. Organic Electronics. 114. 106750–106750. 4 indexed citations

Duan, Jinxia, Jie Tang, Houzhao Wan, et al.. (2023). MACl enhanced electron extraction in all-inorganic Cs₂AgBiBr₆ perovskite photovoltaics. Chemical Communications. 59(9). 1173–1176. 8 indexed citations

Wang, Yiqun, et al.. (2023). Atomic-scale investigation on endurance mechanism of the GeTex-based OTS device by Si doping. Vacuum. 213. 112127–112127. 2 indexed citations

Wen, Jinyu, Lun Wang, Ling Yang, et al.. (2023). A 2.22 Mb/s True Random Number Generator Based on a GeTe_x Ovonic Threshold Switching Memristor. IEEE Electron Device Letters. 44(5). 853–856. 13 indexed citations

10.

Wu, Wen‐Wei, Huidi Liu, Junke Wang, et al.. (2023). Emerging Opportunities for 2D Materials in Neuromorphic Computing. Nanomaterials. 13(19). 2720–2720. 6 indexed citations

11.

Li, Tao, Yan Zhang, Jun Zhang, et al.. (2023). 3D trigonal FAPbI₃‐based multilevel resistive switching nonvolatile memory for artificial neural synapse. SHILAP Revista de lepidopterología. 5(3). 19 indexed citations

12.

Ma, Guokun, et al.. (2022). High uniformity and stability of 1S1R directly stacked for high‐density cross‐point memory applications. Rare Metals. 41(11). 3671–3676. 12 indexed citations

13.

Wu, Dingjun, Hai Zhou, Xin Feng, et al.. (2022). Ultrasensitive, flexible perovskite nanowire photodetectors with long‐term stability exceeding 5000 h. InfoMat. 4(9). 104 indexed citations

14.

Wang, Ze, Pei Shi, Qin Liu, et al.. (2022). Enhanced polymerization interface of Ni12P5 nanowires toward high-rate and durable cathode for alkaline Ni–Zn batteries. Journal of Power Sources. 550. 232170–232170. 17 indexed citations

15.

Rao, Yiheng, Qinghui Yang, Qi Wang, Guokun Ma, & Jie Li. (2021). Ultrafast spin wave propagation in thick magnetic insulator films with perpendicular magnetic anisotropy. Physical review. B.. 104(22). 3 indexed citations

16.

Chen, Ao, Guokun Ma, Jie Ji, et al.. (2021). Improved uniformity and threshold voltage in NbOx-ZrO2 selectors. Applied Physics Letters. 119(7). 2 indexed citations

17.

Chen, Ao, Guokun Ma, Ziqi Zhang, et al.. (2020). One‐Selector One‐Resistor Devices: Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer (Adv. Electron. Mater. 1/2020). Advanced Electronic Materials. 6(1). 1 indexed citations

18.

Ma, Guokun, et al.. (2019). High performance and mechanism of the resistive switching device based on lead halide thin films. Journal of Physics D Applied Physics. 52(13). 135103–135103. 5 indexed citations

19.

Li, Xia, Zhaoying Li, Liyun Wang, et al.. (2016). Low-Voltage Continuous Electrospinning Patterning. ACS Applied Materials & Interfaces. 8(47). 32120–32131. 77 indexed citations

20.

Ma, Guokun, Xiaoli Tang, Huaiwu Zhang, et al.. (2015). Effects of stress on resistive switching property of the NiO RRAM device. Microelectronic Engineering. 139. 43–47. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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