A. Glachant

874 citations

51 papers · 734 indexed · h-index 16

Atomic and Molecular Physics, and Optics top 5%
- Quantum, superfluid, helium dynamics 10
- Advanced Chemical Physics Studies 5
Surfaces, Coatings and Films top 5%
- Electron and X-Ray Spectroscopy Techniques 8
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 5
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 9
Materials Chemistry
- ZnO doping and properties 7
Electrical and Electronic Engineering
- Semiconductor materials and devices 29
Computational Mechanics
- Ion-surface interactions and analysis 5

Co-authors: M. Bienfait Ugo Bardi D. Saïdi G. Boato J.P. Coulomb J. Derrien B. Balland A. Spiesser
Cited by: Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films Condensed Matter Physics
Journals: Surface Science (14 papers)Applied Surface Science (7 papers)Thin Solid Films (7 papers)
Partner nations: France United States Italy

In The Last Decade

A. Glachant

51 papers receiving 678 citations

Peers

Countries citing papers authored by A. Glachant

Since Specialization

Citations

This map shows the geographic impact of A. Glachant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Glachant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Glachant more than expected).

Fields of papers citing papers by A. Glachant

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Glachant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Glachant. The network helps show where A. Glachant may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Glachant, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Glachant Line = papers co-authored together A. Glachant links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Carbon diffusion and reactivity in Mn₅Ge₃ thin films Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Matthieu Petit,Minh Tuan Dau,Guillaume Monier,Lisa Michez,Світлана Михайлівна Дячек,A. Spiesser,Author Rivera,A. Glachant,Solveig Mineo,L. Bideux,C. Robert‐Goumet	2012	5
2	Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructures Thin Solid Films ·Minh Tuan Dau,A. Spiesser,Tim Futter,Lisa Michez,Sion F. Olive‐Méndez,V. Le Thanh,Matthieu Petit,Jean‐Manuel Raimundo,A. Glachant,J. Derrien	2009	8
3	Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxy Thin Solid Films ·A. Spiesser,Sion F. Olive‐Méndez,Minh Tuan Dau,Evelyn Burns-Weinrib,A. Watanabe,V. Le Thanh,A. Glachant,J. Derrien,A. Barski,Matthieu Jamet	2009	38
4	Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection Thin Solid Films ·Sion F. Olive‐Méndez,A. Spiesser,Lisa Michez,V. Le Thanh,A. Glachant,J. Derrien,Thibaut Devillers,A. Barski,Matthieu Jamet	2008	62
5	Thermodynamical computation and physicochemical characterization of thin films deposited by electric-discharge-assisted chemical vapor deposition Applied Surface Science ·Z. Sassi,T. Bjørnstad,Melanie Greenway,A. Glachant,B. Balland	2002	6
6	Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiO Journal of Non-Crystalline Solids ·YOSHIE GOTO,A. Glachant,S. Nitsche,J.Y. Hoarau,D. Goguenheim,D. Vuillaume,María V. Bussy,Jean‐Luc Autran	2001	3
7	Determination of the electrical properties of thermally grown ultrathin nitride films Microelectronics Reliability ·YOSHIE GOTO,A. Glachant,S. Nitsche,J.Y. Hoarau,D. Goguenheim,D. Vuillaume,María V. Bussy,C. Chaneliere	2000	2
8	Energy gap-determination of a carbon contaminated thermal silicon oxide thin film using reflection electron energy loss spectroscopy Journal of Non-Crystalline Solids ·Guangping Li,A. Glachant	1997	8
9	Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy Surface Science ·Guangping Li,A. Glachant	1995	13
10	Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy Journal of Applied Physics ·Annamélia Aryadnyes Vieira Ribeiro da Silva,A. Gagnaire,D. Barbier,A. Glachant	1994	15
11	Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study Applied Surface Science ·A. Glachant,P. Soukiassian	1993	1
12	Nitridation of thin SiO2 films induced by low energy (3–100 eV) electron bombardment Microelectronic Engineering ·V. Fernandez,A. Glachant,Melanie Greenway,B. Balland,A. ; https://orcid.org/0000-0002-4861-4808 Anwander,J.C. Dupuy,A. Straboni	1993	1
13	Nitridation of SiO2 thin films at low ammonia pressures: Composition and electrical properties Thin Solid Films ·B. Balland,A. Glachant,Melanie Greenway,A. ; https://orcid.org/0000-0002-4861-4808 Anwander	1990	12
14	Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation Surface Science ·A. Glachant,B. Balland,A. Ronda,Melanie Greenway,A. ; https://orcid.org/0000-0002-4861-4808 Anwander	1988	17
15	A LEED, AES and TDS study of very thin nitride film growth on Si(100) by direct thermal nitridation in NH3 Surface Science ·A. Glachant,D. Saïdi,Franzesca Watson	1986	27
16	Uniaxial compressibility of a complete monolayer of Xe adsorbed on Cu(110) Surface Science Letters ·A. Glachant,M. Bienfait,Ma Guergué	1984	1
17	Uniaxial compressibility of a complete monolayer of Xe adsorbed on Cu(110) Surface Science ·A. Glachant,M. Bienfait,Ma Guergué	1984	8
18	Diffraction of He atoms from A Xe overlayer adsorbed on graphite (0001) Surface Science ·G. Bracco,P. Cantini,A. Glachant,R. Tatarek	1983	24
19	Thermodynamics and kinetics of Xe monolayer adsorption on Cu(100) by LEED and AES Surface Science ·A. Glachant,Ugo Bardi	1979	56
20	LEED, AES and work function measurements on clean and cesium covered polar faces of GaP Surface Science ·J. Derrien,F. Arnaud d’Avitaya,A. Glachant	1975	10

About A. Glachant

A. Glachant is a scholar working on Surfaces, Coatings and Films, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 51 papers that have together received 734 indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), Quantum, superfluid, helium dynamics (10 papers), Ga2O3 and related materials (9 papers), Electron and X-Ray Spectroscopy Techniques (8 papers), ZnO doping and properties (7 papers), Ion-surface interactions and analysis (5 papers), GaN-based semiconductor devices and materials (5 papers) and Advanced Chemical Physics Studies (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (416 citations), Surfaces, Coatings and Films (87 citations), Condensed Matter Physics (131 citations), Electronic, Optical and Magnetic Materials (119 citations) and Materials Chemistry (288 citations). A. Glachant has collaborated with scholars based in France, United States and Italy. Frequent co-authors include M. Bienfait, Ugo Bardi, D. Saïdi, G. Boato, J.P. Coulomb, J. Derrien, B. Balland, A. Spiesser, G. Bracco and P. Cantini. Their work appears in journals such as Surface Science, Applied Surface Science, Thin Solid Films, Journal of Non-Crystalline Solids and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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