V. Le Thanh

2.3k total citations
96 papers, 1.9k citations indexed

About

V. Le Thanh is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. Le Thanh has authored 96 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 83 papers in Atomic and Molecular Physics, and Optics, 62 papers in Electrical and Electronic Engineering and 47 papers in Materials Chemistry. Recurrent topics in V. Le Thanh's work include Semiconductor Quantum Structures and Devices (46 papers), Semiconductor materials and interfaces (31 papers) and Semiconductor materials and devices (28 papers). V. Le Thanh is often cited by papers focused on Semiconductor Quantum Structures and Devices (46 papers), Semiconductor materials and interfaces (31 papers) and Semiconductor materials and devices (28 papers). V. Le Thanh collaborates with scholars based in France, Japan and Vietnam. V. Le Thanh's co-authors include D. Bouchier, J. Derrien, Joël Chevrier, P. Boucaud, Vy Yam, D. Débarre, Lisa Michez, John E. Mahan, Jean–Michel Lourtioz and A. Spiesser and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. Le Thanh

92 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Le Thanh France 24 1.5k 1.1k 919 373 250 96 1.9k
J. P. Nys France 22 779 0.5× 757 0.7× 547 0.6× 573 1.5× 104 0.4× 57 1.3k
H. Cerva Germany 23 590 0.4× 994 0.9× 613 0.7× 252 0.7× 241 1.0× 91 1.5k
Н. А. Берт Russia 19 1.2k 0.8× 1.1k 1.0× 523 0.6× 206 0.6× 62 0.2× 118 1.5k
Y. Campidelli France 24 1.2k 0.8× 1.4k 1.3× 631 0.7× 404 1.1× 68 0.3× 121 1.9k
K. C. Hsieh United States 24 1.6k 1.0× 1.7k 1.5× 406 0.4× 164 0.4× 108 0.4× 126 2.0k
V. P. LaBella United States 19 874 0.6× 560 0.5× 488 0.5× 114 0.3× 125 0.5× 63 1.1k
H.‐P. Schönherr Germany 24 1.8k 1.2× 696 0.6× 777 0.8× 358 1.0× 783 3.1× 78 2.3k
U. Denker Germany 23 1.3k 0.9× 1.1k 1.0× 821 0.9× 434 1.2× 34 0.1× 48 1.8k
A. J. Pidduck United Kingdom 19 836 0.6× 748 0.7× 334 0.4× 193 0.5× 147 0.6× 46 1.3k
T. C. Anthony United States 20 742 0.5× 468 0.4× 466 0.5× 169 0.5× 399 1.6× 46 1.1k

Countries citing papers authored by V. Le Thanh

Since Specialization
Citations

This map shows the geographic impact of V. Le Thanh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Le Thanh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Le Thanh more than expected).

Fields of papers citing papers by V. Le Thanh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Le Thanh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Le Thanh. The network helps show where V. Le Thanh may publish in the future.

Co-authorship network of co-authors of V. Le Thanh

This figure shows the co-authorship network connecting the top 25 collaborators of V. Le Thanh. A scholar is included among the top collaborators of V. Le Thanh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Le Thanh. V. Le Thanh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Michez, Lisa, Matthieu Petit, Vasile Heresanu, et al.. (2022). Unveiling the atomic position of C in Mn5Ge3Cx thin films. Physical Review Materials. 6(7). 3 indexed citations
2.
Thanh, V. Le, et al.. (2019). The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures. Physica Scripta. 94(8). 85803–85803. 2 indexed citations
3.
Ghrib, A., Minh Tuan Dau, M. Stoffel, et al.. (2013). Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source. Thin Solid Films. 557. 70–75. 17 indexed citations
4.
Thanh, V. Le, A. Spiesser, Minh Tuan Dau, et al.. (2013). Epitaxial growth and magnetic properties of Mn 5 Ge 3 /Ge and Mn 5 Ge 3 C x /Ge heterostructures for spintronic applications. Advances in Natural Sciences Nanoscience and Nanotechnology. 4(4). 43002–43002. 28 indexed citations
5.
Dau, Minh Tuan, et al.. (2012). Growth competition between semiconducting Ge1−x Mn x nanocolumns and metallic Mn5Ge3 clusters. Advances in Natural Sciences Nanoscience and Nanotechnology. 3(2). 25007–25007. 6 indexed citations
6.
Dau, Minh Tuan, et al.. (2012). An unusual phenomenon of surface reaction observed during Ge overgrowth on Mn5Ge3/Ge(111) heterostructures. New Journal of Physics. 14(10). 103020–103020. 8 indexed citations
7.
Dau, Minh Tuan, Matthieu Petit, Akihiro Watanabe, et al.. (2011). Growth of Germanium Nanowires on Silicon(111) Substrates by Molecular Beam Epitaxy. Journal of Nanoscience and Nanotechnology. 11(10). 9292–9295. 5 indexed citations
8.
Olive‐Méndez, Sion F., A. Spiesser, Lisa Michez, et al.. (2008). Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection. Thin Solid Films. 517(1). 191–196. 62 indexed citations
9.
Баранов, А. В., A. V. Fëdorov, T. S. Perova, et al.. (2006). Analysis of strain and intermixing in single-layerGe∕Siquantum dots using polarized Raman spectroscopy. Physical Review B. 73(7). 58 indexed citations
10.
Thanh, V. Le. (2004). Mechanisms of self-organization of Ge/Si(001) quantum dots. Physica E Low-dimensional Systems and Nanostructures. 23(3-4). 401–409. 17 indexed citations
11.
Thanh, V. Le, et al.. (2004). Kinetic formation and optical properties of self-assembled Ge/Si hut clusters. Materials Science in Semiconductor Processing. 8(1-3). 41–46.
12.
Bouchier, D., et al.. (2003). Study of surface roughening of tensily strained Si1−x−yGexCy films grown by ultra high vacuum-chemical vapor deposition. Thin Solid Films. 428(1-2). 150–155. 5 indexed citations
13.
Lardenois, S., et al.. (2002). SiGe/Si multiquantum well structure for light modulation. Materials Science and Engineering B. 89(1-3). 66–69. 4 indexed citations
14.
Yam, Vy, V. Le Thanh, P. Boucaud, D. Débarre, & D. Bouchier. (2002). Kinetics of the heteroepitaxial growth of Ge on Si(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 1251–1258. 12 indexed citations
15.
Thanh, V. Le, Vy Yam, Yulin Zheng, & D. Bouchier. (2000). Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers. Thin Solid Films. 380(1-2). 2–9. 18 indexed citations
16.
Thanh, V. Le, Vy Yam, P. Boucaud, et al.. (1999). Vertically self-organized Ge/Si(001) quantum dots in multilayer structures. Physical review. B, Condensed matter. 60(8). 5851–5857. 119 indexed citations
17.
Boucaud, P., V. Le Thanh, S. Sauvage, et al.. (1998). Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition. Thin Solid Films. 336(1-2). 240–243. 8 indexed citations
18.
19.
Thanh, V. Le, D. Bouchier, & D. Débarre. (1997). Fabrication of SiGe quantum dots on a Si(100) surface. Physical review. B, Condensed matter. 56(16). 10505–10510. 22 indexed citations
20.
Lacharme, J.-P., et al.. (1996). Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer. Applied Surface Science. 92. 357–361. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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