G. Grossmann

583 total citations
25 papers, 439 citations indexed

About

G. Grossmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, G. Grossmann has authored 25 papers receiving a total of 439 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 6 papers in Mechanical Engineering. Recurrent topics in G. Grossmann's work include Semiconductor materials and interfaces (11 papers), Electronic Packaging and Soldering Technologies (10 papers) and Silicon and Solar Cell Technologies (7 papers). G. Grossmann is often cited by papers focused on Semiconductor materials and interfaces (11 papers), Electronic Packaging and Soldering Technologies (10 papers) and Silicon and Solar Cell Technologies (7 papers). G. Grossmann collaborates with scholars based in Sweden, Switzerland and United States. G. Grossmann's co-authors include Erik Janzén, R. Stedman, H. G. Grimmeiss, Ulf von Barth, C.‐O. Almbladh, A. L. Morales, H. G. Grimmeiss, G. Nicoletti, K. Bergman and Michael Stavola and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Advanced Engineering Materials.

In The Last Decade

G. Grossmann

24 papers receiving 414 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Grossmann Sweden 8 262 228 155 95 71 25 439
John Mazurowski United States 11 233 0.9× 169 0.7× 183 1.2× 36 0.4× 26 0.4× 41 418
M. A. G. Halliwell United Kingdom 13 397 1.5× 453 2.0× 238 1.5× 54 0.6× 55 0.8× 32 648
F. Cembali Italy 15 495 1.9× 312 1.4× 126 0.8× 167 1.8× 43 0.6× 38 613
M. Schürmann Germany 11 198 0.8× 82 0.4× 110 0.7× 41 0.4× 78 1.1× 40 364
O. K. Wu United States 17 585 2.2× 404 1.8× 151 1.0× 33 0.3× 40 0.6× 58 648
A. M. Mazzone Italy 11 333 1.3× 211 0.9× 99 0.6× 141 1.5× 21 0.3× 77 472
E. Koppensteiner Austria 13 276 1.1× 294 1.3× 191 1.2× 38 0.4× 38 0.5× 27 458
A. O. Evwaraye United States 18 881 3.4× 403 1.8× 143 0.9× 83 0.9× 34 0.5× 54 937
I. L. Krainsky United States 13 203 0.8× 150 0.7× 315 2.0× 65 0.7× 83 1.2× 31 443
M. Mertin Germany 9 134 0.5× 99 0.4× 137 0.9× 77 0.8× 58 0.8× 15 386

Countries citing papers authored by G. Grossmann

Since Specialization
Citations

This map shows the geographic impact of G. Grossmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Grossmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Grossmann more than expected).

Fields of papers citing papers by G. Grossmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Grossmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Grossmann. The network helps show where G. Grossmann may publish in the future.

Co-authorship network of co-authors of G. Grossmann

This figure shows the co-authorship network connecting the top 25 collaborators of G. Grossmann. A scholar is included among the top collaborators of G. Grossmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Grossmann. G. Grossmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Grossmann, G. & G. Nicoletti. (2015). Lead Free BGAs Soldered with SnPb36Ag2 Solder. MATERIALS TRANSACTIONS. 56(7). 988–991. 1 indexed citations
2.
Grossmann, G., et al.. (2006). Local Fatigue in Lead‐Free SnAg3.8Cu0.7 Solder. Advanced Engineering Materials. 8(3). 179–183. 1 indexed citations
3.
Grossmann, G., et al.. (2005). Local creep in SnAg3.8Cu0.7 lead-free solder. Journal of Electronic Materials. 34(9). 1206–1214. 7 indexed citations
4.
Grossmann, G., et al.. (2003). Results of comparative reliability tests on lead-free solder alloys. 1232–1237. 20 indexed citations
5.
Grossmann, G., et al.. (2002). Properties of thin layers of Sn62Pb36Ag2. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 239. 502–507.
6.
Grossmann, G., et al.. (2002). Metallurgical considerations for accelerated testing of soft solder joints. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 298–304. 1 indexed citations
7.
Grossmann, G. & L. Weber. (2002). Lifetime assessment of soft solder joints on the base of the metallurgical behaviour of Sn/sub 62/Pb/sub 36/Ag/sub 2/. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 256–263. 1 indexed citations
8.
Grossmann, G.. (1999). The deformation behavior of Sn62Pb36Ag/sub 2/ and its implications on the design of thermal cycling tests for electronic assemblies. IEEE Transactions on Electronics Packaging Manufacturing. 22(1). 71–79. 3 indexed citations
9.
Grossmann, G. & L. Weber. (1997). Metallurgical considerations for accelerated testing of soft solder joints. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 20(3). 213–218. 7 indexed citations
10.
Grossmann, G.. (1996). Contamination of Various Flux/Cleaning Combinations on SMT Assemblies: A Discussion of Different Analysis Methods. Soldering and Surface Mount Technology. 8(1). 16–21. 1 indexed citations
11.
Kleverman, M., et al.. (1992). Spectroscopy on Transition-Metal Defects in Silicon. Materials science forum. 83-87. 125–136. 2 indexed citations
12.
Ham, Frank S., et al.. (1992). Many-Electron Effects in the Negative Silicon Vacancy. Materials science forum. 83-87. 475–480. 4 indexed citations
13.
Almbladh, C.‐O., A. L. Morales, & G. Grossmann. (1989). Theory of Auger core-valence-valence processes in simple metals. I. Total yields and core-level lifetime widths. Physical review. B, Condensed matter. 39(6). 3489–3502. 47 indexed citations
14.
Kleverman, M., J. Olajos, G. Grossmann, B. Bech Nielsen, & H. G. Grimmeiss. (1989). Excited State Spectroscopy of Deep Defects in Silicon. Physica Scripta. T25. 134–140. 1 indexed citations
15.
Bergman, K., G. Grossmann, H. G. Grimmeiss, Michael Stavola, & Robert E. McMurray. (1989). Applicability of the deformation-potential approximation to deep donors in silicon. Physical review. B, Condensed matter. 39(2). 1104–1119. 3 indexed citations
16.
Montelius, Lars, H. G. Grimmeiss, & G. Grossmann. (1988). The influence of the RC product on capture cross section measurements in semiconductors. Semiconductor Science and Technology. 3(9). 839–846. 1 indexed citations
17.
Bergman, K., G. Grossmann, H. G. Grimmeiss, et al.. (1988). Tuning the interaction between spin-singlet and spin-triplet states of double donors with stress. Physical review. B, Condensed matter. 37(18). 10738–10745. 3 indexed citations
18.
Grossmann, G., K. Bergman, & M. Kleverman. (1987). Spectroscopic studies of double donors in silicon. Physica B+C. 146(1-2). 30–46. 7 indexed citations
19.
Janzén, Erik, G. Grossmann, R. Stedman, & H. G. Grimmeiss. (1985). Fano resonances in chalcogen-doped silicon. Physical review. B, Condensed matter. 31(12). 8000–8012. 42 indexed citations
20.
Barth, Ulf von & G. Grossmann. (1980). Dynamical Calculations of X-Ray Absorption and Emission Spectra. Physica Scripta. 21(3-4). 580–584. 58 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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