Martin Hetzl
- Materials Chemistry
- Condensed Matter Physics top 5%
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Biomedical Engineering
- Co-authors
- M. StutzmannFabian SchusterJosé A. GarridoSonja MatichCésar MagénJordi ArbiolJulia WinnerlMarı́a de la Mata
- Topics
- GaN-based semiconductor devices and materials (17 papers)ZnO doping and properties (11 papers)Ga2O3 and related materials (8 papers)
- Partner nations
- GermanyUnited StatesSwitzerland
In The Last Decade
Martin Hetzl
22 papers receiving 369 citations
Peers
Comparison fields: 5 of 21
- Materials Chemistry 254
- Condensed Matter Physics 238
- Electronic, Optical and Magnetic Materials 168
- Electrical and Electronic Engineering 135
- Biomedical Engineering 106
Countries citing papers authored by Martin Hetzl
This map shows the geographic impact of Martin Hetzl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Hetzl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Hetzl more than expected).
Fields of papers citing papers by Martin Hetzl
This network shows the impact of papers produced by Martin Hetzl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Hetzl. The network helps show where Martin Hetzl may publish in the future.
Co-authorship network of co-authors of Martin Hetzl
This figure shows the co-authorship network connecting the top 25 collaborators of Martin Hetzl. A scholar is included among the top collaborators of Martin Hetzl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Hetzl. Martin Hetzl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 0 | |
| 2 | 7 | |
| 3 | 5 | |
| 4 | 3 | |
| 5 | 12 | |
| 6 | 7 | |
| 7 | 44 | |
| 8 | 9 | |
| 9 | 14 | |
| 10 | 6 | |
| 11 | 1 | |
| 12 | 23 | |
| 13 | 28 | |
| 14 | 19 | |
| 15 | 14 | |
| 16 | 13 | |
| 17 | 39 | |
| 18 | 73 | |
| 19 | 14 | |
| 20 | 22 |
About Martin Hetzl
Martin Hetzl is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 23 papers that have together received 379 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), ZnO doping and properties (11 papers) and Ga2O3 and related materials (8 papers). The work is most often cited by research in Condensed Matter Physics (238 citations), Electronic, Optical and Magnetic Materials (168 citations) and Materials Chemistry (254 citations). Martin Hetzl has collaborated with scholars based in Germany, United States and Switzerland. Frequent co-authors include M. Stutzmann, Fabian Schuster, José A. Garrido, Sonja Matich, César Magén, Jordi Arbiol, Julia Winnerl, Marı́a de la Mata, Markus Döblinger and Luca Francaviglia. Their work appears in journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.