Y. Chen

564 total citations
26 papers, 436 citations indexed

About

Y. Chen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Y. Chen has authored 26 papers receiving a total of 436 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in Y. Chen's work include Advanced Semiconductor Detectors and Materials (24 papers), Chalcogenide Semiconductor Thin Films (18 papers) and Semiconductor Quantum Structures and Devices (15 papers). Y. Chen is often cited by papers focused on Advanced Semiconductor Detectors and Materials (24 papers), Chalcogenide Semiconductor Thin Films (18 papers) and Semiconductor Quantum Structures and Devices (15 papers). Y. Chen collaborates with scholars based in United States and China. Y. Chen's co-authors include G. Brill, Nibir K. Dhar, P. S. Wijewarnasuriya, S. Farrell, L. A. Almeida, R. N. Jacobs, A. J. Stoltz, J. K. Markunas, M. Carmody and D. D. Edwall and has published in prestigious journals such as Journal of Crystal Growth, Journal of Electronic Materials and Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.

In The Last Decade

Y. Chen

26 papers receiving 419 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Chen United States 16 415 289 119 32 31 26 436
J. K. Markunas United States 12 358 0.9× 253 0.9× 104 0.9× 22 0.7× 34 1.1× 37 386
M. Jaime-Vasquez United States 11 303 0.7× 212 0.7× 88 0.7× 15 0.5× 20 0.6× 30 320
V. Destefanis France 12 374 0.9× 138 0.5× 80 0.7× 68 2.1× 97 3.1× 37 394
R. S. Hall United Kingdom 13 386 0.9× 220 0.8× 111 0.9× 74 2.3× 35 1.1× 22 433
Giacomo Badano France 13 301 0.7× 198 0.7× 110 0.9× 35 1.1× 47 1.5× 42 336
J. Ellsworth United States 10 340 0.8× 188 0.7× 109 0.9× 28 0.9× 30 1.0× 18 351
F. Milési France 10 294 0.7× 113 0.4× 67 0.6× 14 0.4× 40 1.3× 56 325
Yingqiang Xu China 11 310 0.7× 215 0.7× 49 0.4× 48 1.5× 50 1.6× 62 344
T. Hisamatsu Japan 16 469 1.1× 144 0.5× 119 1.0× 19 0.6× 23 0.7× 45 483
Y. Nishijima Japan 13 316 0.8× 207 0.7× 166 1.4× 13 0.4× 19 0.6× 36 352

Countries citing papers authored by Y. Chen

Since Specialization
Citations

This map shows the geographic impact of Y. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Chen more than expected).

Fields of papers citing papers by Y. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Chen. The network helps show where Y. Chen may publish in the future.

Co-authorship network of co-authors of Y. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Chen. A scholar is included among the top collaborators of Y. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Chen. Y. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gao, Hui, et al.. (2024). Preparation and Properties of Carbonyl Iron/Fe+2Fe2+3O4 with Oxidation Blackening. Journal of Electronic Materials. 53(7). 4030–4038. 1 indexed citations
2.
Chen, Y., et al.. (2016). High-Power Diode-Cladding-Pumped Yb:YAG Laser Based on True Double-Clad Fully Crystalline Fiber. 37. ATu6A.4–ATu6A.4. 1 indexed citations
3.
Farrell, S., Mulpuri V. Rao, G. Brill, et al.. (2013). Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers. Journal of Electronic Materials. 42(11). 3097–3102. 12 indexed citations
4.
Benson, J. D., L. O. Bubulac, R. N. Jacobs, et al.. (2013). Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates. Journal of Electronic Materials. 42(11). 3217–3223. 1 indexed citations
5.
Jacobs, R. N., A. J. Stoltz, J. D. Benson, et al.. (2013). Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy. Journal of Electronic Materials. 42(11). 3148–3155. 1 indexed citations
6.
Stoltz, A. J., J. D. Benson, R. N. Jacobs, et al.. (2012). Reduction of Dislocation Density by Producing Novel Structures. Journal of Electronic Materials. 41(10). 2949–2956. 7 indexed citations
7.
Farrell, S., Mulpuri V. Rao, G. Brill, et al.. (2011). Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si. Journal of Electronic Materials. 40(8). 1727–1732. 22 indexed citations
8.
Brill, G., Y. Chen, & P. S. Wijewarnasuriya. (2011). Study of HgCdSe Material Grown by Molecular Beam Epitaxy. Journal of Electronic Materials. 40(8). 1679–1684. 23 indexed citations
9.
Benson, J. D., L. O. Bubulac, Peter J. Smith, et al.. (2010). Characterization of Dislocations in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 39(7). 1080–1086. 28 indexed citations
10.
Jaime-Vasquez, M., R. N. Jacobs, J. D. Benson, et al.. (2010). Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors. Journal of Electronic Materials. 39(7). 951–957. 10 indexed citations
11.
Benson, J. D., Peter J. Smith, R. N. Jacobs, et al.. (2009). Topography and Dislocations in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 38(8). 1771–1775. 15 indexed citations
12.
Taylor, Patrick J., Nibir K. Dhar, E A Harris, et al.. (2009). Analysis of Dislocation Density in Pb(1−x)Sn x Se Grown on ZnTe/Si by MBE. Journal of Electronic Materials. 38(11). 2343–2347. 4 indexed citations
13.
Farrell, S., G. Brill, Y. Chen, et al.. (2009). Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers. Journal of Electronic Materials. 39(1). 43–48. 18 indexed citations
14.
Carmody, M., J. G. Pasko, D. D. Edwall, et al.. (2008). Status of LWIR HgCdTe-on-Silicon FPA Technology. Journal of Electronic Materials. 37(9). 1184–1188. 17 indexed citations
15.
Carmody, M., D. D. Edwall, J. Ellsworth, et al.. (2007). Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon. Journal of Electronic Materials. 36(8). 1098–1105. 20 indexed citations
16.
Carmody, M., J. G. Pasko, D. D. Edwall, et al.. (2006). LWIR HgCdTe on Si detector performance and analysis. Journal of Electronic Materials. 35(6). 1417–1422. 25 indexed citations
17.
Brill, G., Y. Chen, P. M. Amirtharaj, et al.. (2005). Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates. Journal of Electronic Materials. 34(5). 655–661. 30 indexed citations
18.
Carmody, M., J. G. Pasko, D. D. Edwall, et al.. (2005). Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance. Journal of Electronic Materials. 34(6). 832–838. 21 indexed citations
19.
Peiris, F. C., et al.. (2004). Optical properties of CdSexTe1−x epitaxial films studied by spectroscopic ellipsometry. Journal of Electronic Materials. 33(6). 724–727. 8 indexed citations
20.
Brill, G., et al.. (2003). Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces. Journal of Electronic Materials. 32(7). 717–722. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J. K. Markunas Breakdown of academic impact, for papers by M. Jaime-Vasquez Breakdown of academic impact, for papers by V. Destefanis Breakdown of academic impact, for papers by R. S. Hall Breakdown of academic impact, for papers by Giacomo Badano Breakdown of academic impact, for papers by J. Ellsworth Breakdown of academic impact, for papers by F. Milési Breakdown of academic impact, for papers by Yingqiang Xu Breakdown of academic impact, for papers by T. Hisamatsu Breakdown of academic impact, for papers by Y. Nishijima
Rankless by CCL
2026