R. N. Jacobs

1.1k total citations
66 papers, 904 citations indexed

About

R. N. Jacobs is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. N. Jacobs has authored 66 papers receiving a total of 904 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 32 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in R. N. Jacobs's work include Advanced Semiconductor Detectors and Materials (43 papers), Semiconductor Quantum Structures and Devices (28 papers) and Chalcogenide Semiconductor Thin Films (25 papers). R. N. Jacobs is often cited by papers focused on Advanced Semiconductor Detectors and Materials (43 papers), Semiconductor Quantum Structures and Devices (28 papers) and Chalcogenide Semiconductor Thin Films (25 papers). R. N. Jacobs collaborates with scholars based in United States, Belgium and United Kingdom. R. N. Jacobs's co-authors include L. Eersels, J. Meneve, L. A. Almeida, E.H.A. Dekempeneer, J. Smeets, M. Jaime-Vasquez, J. K. Markunas, J. D. Benson, A. J. Stoltz and Annick Vanhulsel and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Surface and Coatings Technology.

In The Last Decade

R. N. Jacobs

65 papers receiving 871 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. N. Jacobs United States 18 531 464 359 338 177 66 904
M.R. Dickinson United States 16 333 0.6× 375 0.8× 444 1.2× 650 1.9× 140 0.8× 34 815
Igor Zhirkov Sweden 16 210 0.4× 370 0.8× 181 0.5× 520 1.5× 160 0.9× 44 659
G. Vanderschaeve France 18 303 0.6× 429 0.9× 196 0.5× 172 0.5× 202 1.1× 67 731
J. L. Démenet France 18 432 0.8× 439 0.9× 338 0.9× 223 0.7× 124 0.7× 53 877
David M. Sanders United States 7 224 0.4× 296 0.6× 310 0.9× 420 1.2× 123 0.7× 8 622
P. Kringhøj Denmark 13 348 0.7× 301 0.6× 176 0.5× 253 0.7× 90 0.5× 35 580
P. Siemroth Germany 20 284 0.5× 553 1.2× 484 1.3× 676 2.0× 231 1.3× 56 974
M. Suezawa Japan 17 786 1.5× 699 1.5× 414 1.2× 125 0.4× 218 1.2× 89 1.2k
V.N. Zhitomirsky Israel 19 357 0.7× 661 1.4× 412 1.1× 831 2.5× 196 1.1× 53 1.1k
P. Gluche Germany 16 444 0.8× 798 1.7× 229 0.6× 367 1.1× 108 0.6× 37 935

Countries citing papers authored by R. N. Jacobs

Since Specialization
Citations

This map shows the geographic impact of R. N. Jacobs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. N. Jacobs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. N. Jacobs more than expected).

Fields of papers citing papers by R. N. Jacobs

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. N. Jacobs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. N. Jacobs. The network helps show where R. N. Jacobs may publish in the future.

Co-authorship network of co-authors of R. N. Jacobs

This figure shows the co-authorship network connecting the top 25 collaborators of R. N. Jacobs. A scholar is included among the top collaborators of R. N. Jacobs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. N. Jacobs. R. N. Jacobs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jacobs, R. N., et al.. (2019). In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe. Journal of Electronic Materials. 48(10). 6138–6144. 2 indexed citations
2.
Benson, J. D., L. O. Bubulac, R. N. Jacobs, et al.. (2019). Defects and the Formation of Impurity ‘Hot Spots’ in HgCdTe/CdZnTe. Journal of Electronic Materials. 48(10). 6194–6202. 1 indexed citations
3.
Kim, Jae Jin, et al.. (2013). TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates. Journal of Electronic Materials. 42(11). 3142–3147. 8 indexed citations
4.
Jacobs, R. N., J. D. Benson, A. J. Stoltz, et al.. (2012). Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/Si(211) by scanning transmission electron microscopy. Journal of Crystal Growth. 366. 88–94. 6 indexed citations
5.
Carmody, M., D. D. Edwall, E. C. Piquette, et al.. (2012). Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates. Journal of Electronic Materials. 41(10). 2719–2724. 30 indexed citations
6.
Bubulac, L. O., J. D. Benson, R. N. Jacobs, et al.. (2011). The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism. Journal of Electronic Materials. 40(3). 280–288. 19 indexed citations
7.
Markunas, J. K., L. A. Almeida, R. N. Jacobs, et al.. (2010). X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates. Journal of Electronic Materials. 39(6). 738–742. 5 indexed citations
8.
Benson, J. D., Peter J. Smith, R. N. Jacobs, et al.. (2009). Topography and Dislocations in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 38(8). 1771–1775. 15 indexed citations
9.
Jaime-Vasquez, M., M. Martinka, A. J. Stoltz, et al.. (2008). Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors. Journal of Electronic Materials. 37(9). 1247–1254. 10 indexed citations
10.
Benson, J. D., R. N. Jacobs, J. K. Markunas, et al.. (2008). Structural Analysis of CdTe Hetero-epitaxy on (211) Si. Journal of Electronic Materials. 37(9). 1231–1236. 23 indexed citations
11.
Jacobs, R. N., L. A. Almeida, J. K. Markunas, et al.. (2008). Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy. Journal of Electronic Materials. 37(9). 1480–1487. 17 indexed citations
12.
Benson, J. D., L. A. Almeida, Michael Carmody, et al.. (2007). Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe. Journal of Electronic Materials. 36(8). 949–957. 11 indexed citations
13.
Jaime-Vasquez, M., M. Martinka, R. N. Jacobs, & J. D. Benson. (2007). Nucleation of ZnTe on the As-Terminated Si(112) Surface. Journal of Electronic Materials. 36(8). 905–909. 9 indexed citations
14.
Jaime-Vasquez, M., M. Martinka, R. N. Jacobs, & M. Groenert. (2006). In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers. Journal of Electronic Materials. 35(6). 1455–1460. 13 indexed citations
15.
Vanhulsel, Annick, R. N. Jacobs, Karel Van Acker, et al.. (2005). Development of Highly Hydrogenated DLC Coatings for Solid Lubricant Applications in Space. 915–916. 2 indexed citations
16.
Jacobs, R. N., L. Salamanca‐Riba, Mingyuan He, et al.. (2001). Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia. MRS Proceedings. 675. 3 indexed citations
17.
Dekempeneer, E.H.A., J. Smeets, J. Meneve, L. Eersels, & R. N. Jacobs. (1994). R.f. PACVD diamond-like carbon coatings on insulating objects. Diamond and Related Materials. 3(4-6). 613–617. 5 indexed citations
18.
Dekempeneer, E.H.A., J. Meneve, J. Smeets, et al.. (1994). Structural, mechanical and tribological properties of plasma-assisted chemically vapour deposited hydrogenated CxN1−x:H films. Surface and Coatings Technology. 68-69. 621–625. 33 indexed citations
19.
Smeets, J., J. Meneve, R. N. Jacobs, L. Eersels, & E.H.A. Dekempeneer. (1993). Physical and tribological properties of a-Si1-xCx : H coatings prepared by r.f. plama-assisted chemical vapour deposition. Journal de Physique IV (Proceedings). 3(C3). C3–503. 3 indexed citations
20.
Meneve, J., R. N. Jacobs, L. Eersels, J. Smeets, & E.H.A. Dekempeneer. (1993). Friction and wear behaviour of amorphous hydrogenated Si1−x Cx films. Surface and Coatings Technology. 62(1-3). 577–582. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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