S. Farrell

588 total citations
22 papers, 482 citations indexed

About

S. Farrell is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Farrell has authored 22 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in S. Farrell's work include Chalcogenide Semiconductor Thin Films (19 papers), Advanced Semiconductor Detectors and Materials (19 papers) and Quantum Dots Synthesis And Properties (10 papers). S. Farrell is often cited by papers focused on Chalcogenide Semiconductor Thin Films (19 papers), Advanced Semiconductor Detectors and Materials (19 papers) and Quantum Dots Synthesis And Properties (10 papers). S. Farrell collaborates with scholars based in United States. S. Farrell's co-authors include Wyatt K. Metzger, G. Brill, P. S. Wijewarnasuriya, Darius Kuciauskas, Matthew O. Reese, James M. Burst, Y. Chen, Nibir K. Dhar, Teresa M. Barnes and T. A. Gessert and has published in prestigious journals such as Journal of Applied Physics, Solar Energy Materials and Solar Cells and Journal of Crystal Growth.

In The Last Decade

S. Farrell

22 papers receiving 467 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Farrell United States 13 460 271 200 32 17 22 482
Tamotsu Okamoto Japan 15 572 1.2× 503 1.9× 160 0.8× 25 0.8× 3 0.2× 53 626
S. N. Nesmelov Russia 11 379 0.8× 126 0.5× 280 1.4× 16 0.5× 59 3.5× 71 393
S. М. Dzyadukh Russia 11 360 0.8× 117 0.4× 260 1.3× 16 0.5× 59 3.5× 66 370
T. Lauinger Germany 8 509 1.1× 238 0.9× 137 0.7× 53 1.7× 3 0.2× 11 530
H.S. Seo South Korea 13 308 0.7× 183 0.7× 76 0.4× 15 0.5× 4 0.2× 50 398
G. Giroult-Matlakowski France 6 334 0.7× 96 0.4× 108 0.5× 36 1.1× 8 0.5× 12 354
E. V. Grushko Ukraine 11 372 0.8× 214 0.8× 106 0.5× 61 1.9× 7 0.4× 28 387
J.F. Nijs Belgium 8 331 0.7× 97 0.4× 124 0.6× 56 1.8× 2 0.1× 13 357
S. Asher United States 13 543 1.2× 455 1.7× 211 1.1× 27 0.8× 2 0.1× 24 570

Countries citing papers authored by S. Farrell

Since Specialization
Citations

This map shows the geographic impact of S. Farrell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Farrell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Farrell more than expected).

Fields of papers citing papers by S. Farrell

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Farrell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Farrell. The network helps show where S. Farrell may publish in the future.

Co-authorship network of co-authors of S. Farrell

This figure shows the co-authorship network connecting the top 25 collaborators of S. Farrell. A scholar is included among the top collaborators of S. Farrell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Farrell. S. Farrell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jiang, Chun‐Sheng, John Moseley, Chunhui Xiao, et al.. (2020). Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy. Solar Energy Materials and Solar Cells. 209. 110468–110468. 12 indexed citations
2.
Colegrove, Eric, David S. Albin, Harvey Guthrey, et al.. (2015). Phosphorus doping of polycrystalline CdTe by diffusion. 1–6. 6 indexed citations
3.
Reese, Matthew O., Craig L. Perkins, James M. Burst, et al.. (2015). Intrinsic surface passivation of CdTe. Journal of Applied Physics. 118(15). 119 indexed citations
4.
Farrell, S., et al.. (2015). In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy. Journal of Electronic Materials. 44(9). 3202–3206. 22 indexed citations
5.
Metzger, Wyatt K., James M. Burst, David Albin, et al.. (2015). Resetting the defect chemistry in CdTe. 118. 1–3. 3 indexed citations
6.
Burst, James M., David S. Albin, Joel N. Duenow, et al.. (2014). Advances in control of doping and lifetime in single-crystal and polycrystalline CdTe. 108. 3258–3260. 3 indexed citations
7.
Kuciauskas, Darius, S. Farrell, Pat Dippo, et al.. (2014). Charge-carrier transport and recombination in heteroepitaxial CdTe. Journal of Applied Physics. 116(12). 34 indexed citations
8.
Farrell, S., R. H. Kodama, Eric Colegrove, et al.. (2014). Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy. Journal of Electronic Materials. 43(8). 2998–3003. 22 indexed citations
9.
Farrell, S., Mulpuri V. Rao, G. Brill, et al.. (2013). Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers. Journal of Electronic Materials. 42(11). 3097–3102. 12 indexed citations
10.
Jacobs, R. N., A. J. Stoltz, J. D. Benson, et al.. (2013). Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy. Journal of Electronic Materials. 42(11). 3148–3155. 1 indexed citations
11.
Liu, Shi, Jacob J. Becker, S. Farrell, Weiquan Yang, & Yong‐Hang Zhang. (2013). SiO<inf>2</inf>/ZnSe anti-reflection coating for solar cells. 2105–2108. 3 indexed citations
12.
Jacobs, R. N., J. D. Benson, A. J. Stoltz, et al.. (2012). Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/Si(211) by scanning transmission electron microscopy. Journal of Crystal Growth. 366. 88–94. 6 indexed citations
13.
Yang, Weiquan, Charles R. Allen, Jingjing Li, et al.. (2012). Ultra-thin GaAs single-junction solar cells integrated with lattice-matched ZnSe as a reflective back scattering layer. 8256. 978–981. 7 indexed citations
14.
Stoltz, A. J., J. D. Benson, R. N. Jacobs, et al.. (2012). Reduction of Dislocation Density by Producing Novel Structures. Journal of Electronic Materials. 41(10). 2949–2956. 7 indexed citations
15.
Farrell, S., Mulpuri V. Rao, G. Brill, et al.. (2011). Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si. Journal of Electronic Materials. 40(8). 1727–1732. 22 indexed citations
16.
Stoltz, A. J., J. D. Benson, M. Carmody, et al.. (2011). Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures. Journal of Electronic Materials. 40(8). 1785–1789. 12 indexed citations
17.
Benson, J. D., S. Farrell, G. Brill, et al.. (2011). Dislocation Analysis in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 40(8). 1847–1853. 20 indexed citations
18.
Brill, G., S. Farrell, P. S. Wijewarnasuriya, et al.. (2010). Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing. Journal of Electronic Materials. 39(7). 967–973. 18 indexed citations
19.
Farrell, S., G. Brill, Y. Chen, et al.. (2009). Ex Situ Thermal Cycle Annealing of Molecular Beam Epitaxy Grown HgCdTe/Si Layers. Journal of Electronic Materials. 39(1). 43–48. 18 indexed citations
20.
Chen, Y., S. Farrell, G. Brill, P. S. Wijewarnasuriya, & Nibir K. Dhar. (2008). Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing. Journal of Crystal Growth. 310(24). 5303–5307. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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