J. K. Markunas

486 total citations
37 papers, 386 citations indexed

About

J. K. Markunas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. K. Markunas has authored 37 papers receiving a total of 386 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in J. K. Markunas's work include Advanced Semiconductor Detectors and Materials (37 papers), Semiconductor Quantum Structures and Devices (22 papers) and Chalcogenide Semiconductor Thin Films (19 papers). J. K. Markunas is often cited by papers focused on Advanced Semiconductor Detectors and Materials (37 papers), Semiconductor Quantum Structures and Devices (22 papers) and Chalcogenide Semiconductor Thin Films (19 papers). J. K. Markunas collaborates with scholars based in United States, Australia and Italy. J. K. Markunas's co-authors include L. A. Almeida, R. N. Jacobs, M. Jaime-Vasquez, J. D. Benson, Peter J. Smith, A. J. Stoltz, G. Brill, Y. Chen, P. S. Wijewarnasuriya and J. Pellegrino and has published in prestigious journals such as Journal of Crystal Growth, Journal of Electronic Materials and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

In The Last Decade

J. K. Markunas

36 papers receiving 380 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. K. Markunas United States 12 358 253 104 34 22 37 386
Y. Chen United States 16 415 1.2× 289 1.1× 119 1.1× 31 0.9× 32 1.5× 26 436
Giacomo Badano France 13 301 0.8× 198 0.8× 110 1.1× 47 1.4× 35 1.6× 42 336
M. Jaime-Vasquez United States 11 303 0.8× 212 0.8× 88 0.8× 20 0.6× 15 0.7× 30 320
I. V. Sabinina Russia 11 343 1.0× 216 0.9× 106 1.0× 24 0.7× 50 2.3× 50 373
Krystian Michalczewski Poland 13 357 1.0× 254 1.0× 64 0.6× 37 1.1× 72 3.3× 56 382
Yingqiang Xu China 11 310 0.9× 215 0.8× 49 0.5× 50 1.5× 48 2.2× 62 344
S. N. Nesmelov Russia 11 379 1.1× 280 1.1× 126 1.2× 16 0.5× 59 2.7× 71 393
Y. Nishijima Japan 13 316 0.9× 207 0.8× 166 1.6× 19 0.6× 13 0.6× 36 352
S. М. Dzyadukh Russia 11 360 1.0× 260 1.0× 117 1.1× 16 0.5× 59 2.7× 66 370
R. S. Hall United Kingdom 13 386 1.1× 220 0.9× 111 1.1× 35 1.0× 74 3.4× 22 433

Countries citing papers authored by J. K. Markunas

Since Specialization
Citations

This map shows the geographic impact of J. K. Markunas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. K. Markunas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. K. Markunas more than expected).

Fields of papers citing papers by J. K. Markunas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. K. Markunas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. K. Markunas. The network helps show where J. K. Markunas may publish in the future.

Co-authorship network of co-authors of J. K. Markunas

This figure shows the co-authorship network connecting the top 25 collaborators of J. K. Markunas. A scholar is included among the top collaborators of J. K. Markunas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. K. Markunas. J. K. Markunas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Benson, J. D., L. O. Bubulac, R. N. Jacobs, et al.. (2013). Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates. Journal of Electronic Materials. 42(11). 3217–3223. 1 indexed citations
2.
Almeida, L. A., R. N. Jacobs, J. D. Benson, et al.. (2013). The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing. Journal of Electronic Materials. 42(11). 3344–3348. 2 indexed citations
3.
Carmody, M., D. D. Edwall, E. C. Piquette, et al.. (2012). Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates. Journal of Electronic Materials. 41(10). 2719–2724. 30 indexed citations
4.
Markunas, J. K., et al.. (2011). High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy. Journal of Electronic Materials. 40(8). 1790–1794. 2 indexed citations
5.
Markunas, J. K., R. N. Jacobs, Peter J. Smith, & John Pellegrino. (2011). Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers. Journal of Electronic Materials. 40(8). 1809–1814. 1 indexed citations
6.
Markunas, J. K., L. A. Almeida, R. N. Jacobs, et al.. (2010). X-ray Diffraction Imaging of Improved Bulk-Grown CdZnTe(211) and Its Comparison with Epitaxially Grown CdTe Buffer Layers on Si and Ge Substrates. Journal of Electronic Materials. 39(6). 738–742. 5 indexed citations
7.
Benson, J. D., L. O. Bubulac, Peter J. Smith, et al.. (2010). Characterization of Dislocations in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 39(7). 1080–1086. 28 indexed citations
8.
Jacobs, R. N., Peter J. Smith, J. K. Markunas, J. D. Benson, & John Pellegrino. (2010). Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures. Journal of Electronic Materials. 39(7). 1036–1042. 4 indexed citations
9.
Benson, J. D., Peter J. Smith, R. N. Jacobs, et al.. (2009). Topography and Dislocations in (112)B HgCdTe/CdTe/Si. Journal of Electronic Materials. 38(8). 1771–1775. 15 indexed citations
10.
Bellotti, E., et al.. (2009). Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique. Journal of Electronic Materials. 38(8). 1746–1754. 4 indexed citations
11.
Bellotti, E., Paul E. Barbone, F. T. Smith, et al.. (2009). A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe. Journal of Electronic Materials. 38(8). 1698–1706. 2 indexed citations
12.
Jaime-Vasquez, M., M. Martinka, A. J. Stoltz, et al.. (2008). Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors. Journal of Electronic Materials. 37(9). 1247–1254. 10 indexed citations
13.
Benson, J. D., R. N. Jacobs, J. K. Markunas, et al.. (2008). Structural Analysis of CdTe Hetero-epitaxy on (211) Si. Journal of Electronic Materials. 37(9). 1231–1236. 23 indexed citations
14.
Jacobs, R. N., L. A. Almeida, J. K. Markunas, et al.. (2008). Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy. Journal of Electronic Materials. 37(9). 1480–1487. 17 indexed citations
15.
Benson, J. D., L. A. Almeida, Michael Carmody, et al.. (2007). Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe. Journal of Electronic Materials. 36(8). 949–957. 11 indexed citations
16.
Martinka, M., M. Jaime-Vasquez, L. A. Almeida, et al.. (2007). Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb. Journal of Electronic Materials. 37(2). 152–156. 3 indexed citations
17.
Molstad, Jay, et al.. (2006). Epitaxial growth of CdTe on (211) silicon mesas formed by deep reactive ion etching. Journal of Electronic Materials. 35(8). 1636–1640. 3 indexed citations
18.
Benson, J. D., J. B. Varesi, A. J. Stoltz, et al.. (2006). Surface structure of (111)A HgCdTe. Journal of Electronic Materials. 35(6). 1434–1442. 5 indexed citations
19.
Velicu, Silviu, J. Crocco, Yong Chang, et al.. (2005). Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates. Journal of Electronic Materials. 34(6). 885–890. 20 indexed citations
20.
Benson, J. D., A. J. Stoltz, J. B. Varesi, et al.. (2005). Surface structure of plasma-etched (211)B HgCdTe. Journal of Electronic Materials. 34(6). 726–732. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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