M. Carmody

713 total citations
32 papers, 571 citations indexed

About

M. Carmody is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Carmody has authored 32 papers receiving a total of 571 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in M. Carmody's work include Advanced Semiconductor Detectors and Materials (25 papers), Chalcogenide Semiconductor Thin Films (15 papers) and Semiconductor Quantum Structures and Devices (12 papers). M. Carmody is often cited by papers focused on Advanced Semiconductor Detectors and Materials (25 papers), Chalcogenide Semiconductor Thin Films (15 papers) and Semiconductor Quantum Structures and Devices (12 papers). M. Carmody collaborates with scholars based in United States, Argentina and South Korea. M. Carmody's co-authors include D. D. Edwall, M. Zandian, J. M. Arias, E. C. Piquette, J. W. Garland, S. Sivananthan, W. E. Tennant, L. A. Almeida, J. H. Dinan and G. Brill and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

M. Carmody

31 papers receiving 549 citations

Peers

M. Carmody
P. W. Norton United States
J. L. Johnson United States
O. K. Wu United States
K. Kosai United States
Y.-H. Zhang United States
C. Besikci Türkiye
E. R. Blazejewski United States
V. Gopal India
L. A. Almeida United States
P. W. Norton United States
M. Carmody
Citations per year, relative to M. Carmody M. Carmody (= 1×) peers P. W. Norton

Countries citing papers authored by M. Carmody

Since Specialization
Citations

This map shows the geographic impact of M. Carmody's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Carmody with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Carmody more than expected).

Fields of papers citing papers by M. Carmody

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Carmody. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Carmody. The network helps show where M. Carmody may publish in the future.

Co-authorship network of co-authors of M. Carmody

This figure shows the co-authorship network connecting the top 25 collaborators of M. Carmody. A scholar is included among the top collaborators of M. Carmody based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Carmody. M. Carmody is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Carmody, M., et al.. (2025). Ion transport and defect states within the band gap of lead halide perovskites studied via the moving grating technique. Journal of Physics D Applied Physics. 58(47). 475109–475109.
2.
Shojaei, Borzoyeh, et al.. (2019). Full-Wafer Strain and Relaxation Mapping of Hg1−xCdxTe Multilayer Structures Grown on Cd1−yZnyTe Substrates. Journal of Electronic Materials. 48(10). 6118–6123. 1 indexed citations
3.
Carmody, M., et al.. (2016). High-Operating Temperature HgCdTe: A Vision for the Near Future. Journal of Electronic Materials. 45(9). 4587–4595. 90 indexed citations
4.
Carmody, M., D. D. Edwall, E. C. Piquette, et al.. (2012). Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates. Journal of Electronic Materials. 41(10). 2719–2724. 30 indexed citations
5.
Stoltz, A. J., J. D. Benson, R. N. Jacobs, et al.. (2012). Reduction of Dislocation Density by Producing Novel Structures. Journal of Electronic Materials. 41(10). 2949–2956. 7 indexed citations
6.
Garland, J. W., et al.. (2011). Next-generation multijunction solar cells: The promise of II-VI materials. Journal of Applied Physics. 109(10). 36 indexed citations
7.
Bubulac, L. O., J. D. Benson, R. N. Jacobs, et al.. (2011). The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism. Journal of Electronic Materials. 40(3). 280–288. 19 indexed citations
8.
Stoltz, A. J., J. D. Benson, M. Carmody, et al.. (2011). Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures. Journal of Electronic Materials. 40(8). 1785–1789. 12 indexed citations
9.
Carmody, M., et al.. (2010). Single-crystal II-VI on Si single-junction and tandem solar cells. Applied Physics Letters. 96(15). 84 indexed citations
10.
Carmody, M., C. H. Grein, Jun Zhao, et al.. (2010). Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications. Journal of Electronic Materials. 39(7). 1087–1096. 3 indexed citations
11.
Carmody, M., J. G. Pasko, D. D. Edwall, et al.. (2008). Status of LWIR HgCdTe-on-Silicon FPA Technology. Journal of Electronic Materials. 37(9). 1184–1188. 17 indexed citations
12.
Carmody, M., D. D. Edwall, J. Ellsworth, et al.. (2007). Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon. Journal of Electronic Materials. 36(8). 1098–1105. 20 indexed citations
13.
Johnstone, D., et al.. (2007). Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy. Journal of Electronic Materials. 36(8). 832–836. 1 indexed citations
14.
Golding, T. D., L. O. Bubulac, J. H. Dinan, et al.. (2006). Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma. Journal of Electronic Materials. 35(6). 1465–1469. 12 indexed citations
15.
Carmody, M., J. G. Pasko, D. D. Edwall, et al.. (2005). Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance. Journal of Electronic Materials. 34(6). 832–838. 21 indexed citations
16.
Zandian, M., James D. Garnett, R. E. DeWames, et al.. (2003). Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance. Journal of Electronic Materials. 32(7). 803–809. 21 indexed citations
17.
Liao, DaHan, et al.. (2003). Optical absorption properties of HgCdTe epilayers with uniform composition. Journal of Electronic Materials. 32(7). 646–650. 17 indexed citations
18.
Carmody, M., et al.. (2003). Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers. Journal of Electronic Materials. 32(7). 710–716. 21 indexed citations
19.
Carmody, M., B. H. Moeckly, K. L. Merkle, & Laurence D. Marks. (2000). Spatial variation of the current in grain boundary Josephson junctions. Journal of Applied Physics. 87(5). 2454–2459. 9 indexed citations
20.
Carmody, M., Eric Landree, Laurence D. Marks, & K. L. Merkle. (1999). Determination of the current density distribution in Josephson junctions. Physica C Superconductivity. 315(3-4). 145–153. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026