J. Ellsworth

456 citations

18 papers · 351 indexed · h-index 10

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 7
Electrical and Electronic Engineering top 10%
- Advanced Semiconductor Detectors and Materials 16
- Chalcogenide Semiconductor Thin Films 11
Instrumentation
Radiation
Materials Chemistry
- Quantum Dots Synthesis And Properties 3
- Electronic and Structural Properties of Oxides 2
- Machine Learning in Materials Science 2
Biomedical Engineering
- Advanced X-ray and CT Imaging 3
Aerospace Engineering
- Infrared Target Detection Methodologies 2

Co-authors: H. R. Vydyanath Carl J. Johnson James J. Kennedy Pok‐Kai Liao Brian Dean D. D. Edwall E. C. Piquette Michael Carmody
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Instrumentation
Journals: Journal of Electronic Materials (10 papers)Journal of Applied Physics (1 paper)Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2 papers)
Partner nations: United States Australia

In The Last Decade

J. Ellsworth

18 papers receiving 330 citations

Peers

Countries citing papers authored by J. Ellsworth

Since Specialization

Citations

This map shows the geographic impact of J. Ellsworth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ellsworth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ellsworth more than expected).

Fields of papers citing papers by J. Ellsworth

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ellsworth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ellsworth. The network helps show where J. Ellsworth may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Ellsworth, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ellsworth Line = papers co-authored together J. Ellsworth links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

#	Work
1	Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures Journal of Electronic Materials ·Borzoyeh Shojaei,K. Zenger,Uta Schotten,J. Ellsworth,D. D. Edwall,R. Taufik Nur Muftiyanto,军池,M. Edirisooriya,H. Bauer,M. Carmody	2022	1
2	Law 19: The ultimate photodiode performance metric بدريه الحربي,Luisa Fernanda Galeano Hoyos,J. Ellsworth,محمد عودة,Annie Chen,竹内操,H. Bauer,Michael Carmody,E. C. Piquette,M. Zandian,洋子早渕	2020	40
3	Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy Journal of Electronic Materials ·Takehiro Koyanagi,D. D. Edwall,J. Ellsworth,洋子早渕,M. Zandian,Michael Carmody	2017	12
4	High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass Journal of Electronic Materials ·Eric Colegrove,R. E. Banai,HANSEN H. E.,Haichao Guo,J. Ellsworth,Márcia Beatriz Alves,A. Aliberti,Muhammad Faiz Isra,Jeremy D. Bergeson,R. G. Dhere,和利前野,T. A. Gessert,S. Sivananthan	2012	32
5	Polycrystalline CdTe solar cells on buffered commercial TCO-coated glass with efficiencies above 15% R. E. Banai,HANSEN H. E.,Haichao Guo,Eric Colegrove,Torsten HUStN,J. Ellsworth,Márcia Beatriz Alves,A. Aliberti,Wokurka,Muhammad Faiz Isra,R. G. Dhere,Jeremy D. Bergeson,和利前野,T. A. Gessert	2011	2
6	Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon Journal of Electronic Materials ·M. Carmody,D. D. Edwall,J. Ellsworth,J. M. Arias,M. Groenert,R. N. Jacobs,L. A. Almeida,J. H. Dinan,Y. Chen,G. Brill,Nibir K. Dhar	2007	20
7	Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe Journal of Electronic Materials ·D. D. Edwall,E. C. Piquette,J. Ellsworth,J. M. Arias,C. H. Swartz,Lihua Bai,Randy P. Tompkins,N. C. Giles,T. H. Myers,M. A. Berding	2004	24
8	Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe Journal of Electronic Materials ·C. H. Swartz,Randy P. Tompkins,N. C. Giles,T. H. Myers,D. D. Edwall,J. Ellsworth,E. C. Piquette,J. M. Arias,M. A. Berding,S. Krishnamurthy,I. Vurgaftman,J. R. Meyer	2004	27
9	LPE HgCdTe on sapphire status and advancements Journal of Electronic Materials ·猛中西,K. L. Hess,J. Ellsworth,Donald E. Cooper,Ronald S. Haines	2001	4
10	<title>Advanced LWIR HgCdTe detectors for strategic applications</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·E. R. Blazejewski,Gail Williams,W. V. McLevige,Natália Freitas Dantas,誠藤沢,E. R. Gertner,J. Ellsworth,Raffles Raffles,方东张,H. R. Vydyanath	1994	2
11	Electrical characterization of Hg1−xCdxTe (0.126≤x≤0.58) grown by organometallic vapor phase epitaxy Journal of Applied Physics ·Brother Nicholus Nuwagira,J. D. Parsons,J. Ellsworth,H. R. Vydyanath	1994	3
12	Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg, Cd)Te photodiodes Journal of Electronic Materials ·H. R. Vydyanath,J. Ellsworth,John Parkinson,James J. Kennedy,Brian Dean,Carl J. Johnson,志勇潘,Báez Peñuela,Pok‐Kai Liao	1993	30
13	Vapor phase equilibria in the Cd1−xZnxTe alloy system Journal of Electronic Materials ·H. R. Vydyanath,J. Ellsworth,Michael Sindell,James J. Kennedy,Carl J. Johnson,志勇潘	1993	22
14	Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H. R. Vydyanath,J. Ellsworth,James J. Kennedy,Brian Dean,Carl J. Johnson,志勇潘,Báez Peñuela,Pok‐Kai Liao	1992	65
15	Correlation of HgCdTe epilayer defects with underlying substrate defects by synchrotron x-ray topography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·BettyM. Dean,Carl J. Johnson,Siti Nursyamsiah,志勇潘,Báez Peñuela,R.C. Dobbyn,M. Kuriyama,J. Ellsworth,H. R. Vydyanath,James J. Kennedy	1991	4
16	High Performance (Hg,Cd)Te Heterostructure Photodiode Arrays With Improved Radiation Hardening Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·H. R. Vydyanath,屈炳芬,方东张,Raffles Raffles,Janusz Sławiński,J. Ellsworth,John Parkinson	1989	5
17	Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions Journal of Electronic Materials ·H. R. Vydyanath,J. Ellsworth,C. Devaney	1987	56
18	High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·H. R. Vydyanath,屈炳芬,方东张,Raffles Raffles,Janusz Sławiński,C. Devaney,J. Ellsworth,H. Nishimura	1986	2

About J. Ellsworth

J. Ellsworth is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Aerospace Engineering and Biomedical Engineering, having authored 18 papers that have together received 351 indexed citations. Recurring topics across this work include Advanced Semiconductor Detectors and Materials (16 papers), Chalcogenide Semiconductor Thin Films (11 papers), Semiconductor Quantum Structures and Devices (7 papers), Quantum Dots Synthesis And Properties (3 papers), Advanced X-ray and CT Imaging (3 papers), Infrared Target Detection Methodologies (2 papers), Electronic and Structural Properties of Oxides (2 papers) and Machine Learning in Materials Science (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (188 citations), Electrical and Electronic Engineering (340 citations), Instrumentation (14 citations), Radiation (22 citations) and Materials Chemistry (109 citations). J. Ellsworth has collaborated with scholars based in United States and Australia. Frequent co-authors include H. R. Vydyanath, Carl J. Johnson, James J. Kennedy, Pok‐Kai Liao, Brian Dean, D. D. Edwall, E. C. Piquette, Michael Carmody, M. Zandian and J. M. Arias. Their work appears in journals such as Journal of Electronic Materials, Journal of Applied Physics, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena and Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact