Zixuan Sun

545 total citations
50 papers, 362 citations indexed

About

Zixuan Sun is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Zixuan Sun has authored 50 papers receiving a total of 362 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in Zixuan Sun's work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (43 papers) and Ferroelectric and Negative Capacitance Devices (23 papers). Zixuan Sun is often cited by papers focused on Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (43 papers) and Ferroelectric and Negative Capacitance Devices (23 papers). Zixuan Sun collaborates with scholars based in China, United Kingdom and United States. Zixuan Sun's co-authors include Runsheng Wang, Ru Huang, Zhuoqing Yu, Zhe Zhang, Zhigang Ji, Ru Huang, Lining Zhang, Jiahao Song, Pengpeng Ren and Xiangwei Jiang and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Zixuan Sun

41 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zixuan Sun China 12 325 55 23 21 20 50 362
Weiran Kong China 10 211 0.6× 37 0.7× 30 1.3× 41 2.0× 13 0.7× 30 239
Chih‐Hong Hwang Taiwan 11 368 1.1× 42 0.8× 47 2.0× 13 0.6× 10 0.5× 29 421
Rui Gao China 13 370 1.1× 54 1.0× 18 0.8× 28 1.3× 99 5.0× 43 409
N. Planes France 17 781 2.4× 39 0.7× 56 2.4× 51 2.4× 8 0.4× 56 804
Giuseppe La Rosa United States 13 657 2.0× 42 0.8× 18 0.8× 34 1.6× 7 0.3× 35 699
G. Servalli Italy 7 261 0.8× 204 3.7× 12 0.5× 10 0.5× 6 0.3× 14 299
Osbert Cheng Taiwan 12 486 1.5× 51 0.9× 16 0.7× 14 0.7× 7 0.3× 87 497
Meng Duan United Kingdom 15 430 1.3× 17 0.3× 19 0.8× 15 0.7× 16 0.8× 38 444
Gihun Choe United States 12 323 1.0× 141 2.6× 25 1.1× 10 0.5× 9 0.5× 32 342
Sheng-Chih Lai Taiwan 13 437 1.3× 219 4.0× 50 2.2× 8 0.4× 6 0.3× 37 477

Countries citing papers authored by Zixuan Sun

Since Specialization
Citations

This map shows the geographic impact of Zixuan Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zixuan Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zixuan Sun more than expected).

Fields of papers citing papers by Zixuan Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zixuan Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zixuan Sun. The network helps show where Zixuan Sun may publish in the future.

Co-authorship network of co-authors of Zixuan Sun

This figure shows the co-authorship network connecting the top 25 collaborators of Zixuan Sun. A scholar is included among the top collaborators of Zixuan Sun based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zixuan Sun. Zixuan Sun is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Wenfeng, Yuxiao Wang, Zixuan Sun, et al.. (2025). Investigation on the Band Tail States in FinFETs at Cryogenic Temperature. IEEE Transactions on Electron Devices. 72(5). 2670–2676.
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Liu, Yong, Pengpeng Ren, Maokun Wu, et al.. (2024). Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part I: Defect-Based Statistical Compact Model. IEEE Transactions on Electron Devices. 71(8). 4462–4468. 1 indexed citations
5.
Liu, Yong, Pengpeng Ren, Maokun Wu, et al.. (2024). Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization. IEEE Transactions on Electron Devices. 71(8). 4469–4475. 3 indexed citations
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Chen, Sihao, Yu Li, Nevin L. Zhang, et al.. (2024). Self-Heating Effects of Vertical Gate-All-Around Transistors: Analysis and Modeling. IEEE Transactions on Electron Devices. 71(11). 6478–6485.
8.
Sun, Zixuan, Haoran Lu, Pengpeng Ren, et al.. (2024). Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. P72.TX–1. 2 indexed citations
9.
Wang, Zirui, Haoran Wang, Wenfeng Li, et al.. (2024). Towards Understanding the Dynamic Variation in FinFET at Cryogenic Temperature: New Observations and Physical Modeling. 1–4. 1 indexed citations
10.
Sun, Zixuan, Sihao Chen, Lining Zhang, Ru Huang, & Runsheng Wang. (2024). The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. Micromachines. 15(1). 127–127. 4 indexed citations
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Sun, Zixuan, Runsheng Wang, Lining Zhang, et al.. (2023). Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits. IEEE Transactions on Electron Devices. 70(3). 921–927. 6 indexed citations
13.
Ren, Pengpeng, Junjie Wu, Shuying Wang, et al.. (2023). On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects. IEEE Transactions on Electron Devices. 70(9). 4518–4524. 12 indexed citations
14.
Sun, Zixuan, Pengpeng Ren, Zhigang Ji, et al.. (2023). A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology. IEEE Transactions on Electron Devices. 71(1). 206–212. 3 indexed citations
15.
Sun, Zixuan, Runsheng Wang, Lining Zhang, et al.. (2023). Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis. IEEE Transactions on Electron Devices. 70(3). 914–920. 13 indexed citations
16.
Ren, Pengpeng, Zixuan Sun, Zirui Wang, et al.. (2023). On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology. IEEE Electron Device Letters. 44(6). 939–942. 3 indexed citations
17.
Sun, Zixuan, et al.. (2023). Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology. 1–6. 3 indexed citations
18.
Liu, Minghao, Zixuan Sun, Haoran Lu, et al.. (2023). A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs. Nanomaterials. 13(9). 1507–1507.
19.
Huang, Jin, Yuelong Ma, Yanbin Li, et al.. (2021). Composite structure Cr:YAG/Ce:YAG and (Ce,Cr):YAG/Ce:YAG transparent ceramics with high color rendering index for white LEDs/LDs. Ceramics International. 47(8). 11415–11422. 40 indexed citations
20.
Liang, Zhongxin, Qianqian Huang, Cheng Chen, et al.. (2019). A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation. IEEE Electron Device Letters. 40(6). 989–992. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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