V. D. Tkachev

494 total citations
25 papers, 390 citations indexed

About

V. D. Tkachev is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. D. Tkachev has authored 25 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. D. Tkachev's work include Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (9 papers) and Silicon Nanostructures and Photoluminescence (7 papers). V. D. Tkachev is often cited by papers focused on Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (9 papers) and Silicon Nanostructures and Photoluminescence (7 papers). V. D. Tkachev collaborates with scholars based in Belarus and Russia. V. D. Tkachev's co-authors include Н. А. Дроздов, А. В. Мудрый, A.M. Zaitsev, G. Hölzer, N. A. Poklonski, В. В. Ткачев, Roumen Kakanakov, Владимир И. Минкин, Victor Petrov and В. С. Просолович and has published in prestigious journals such as physica status solidi (b), New Journal of Chemistry and Atomic Energy.

In The Last Decade

V. D. Tkachev

23 papers receiving 372 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. D. Tkachev Belarus	11	294	247	148	64	44	25	390
K. Seibert Germany	9	213 0.7×	166 0.7×	169 1.1×	49 0.8×	68 1.5×	17	346
J. S. Park United States	7	336 1.1×	159 0.6×	292 2.0×	47 0.7×	60 1.4×	9	451
C. Ance France	11	359 1.2×	242 1.0×	199 1.3×	26 0.4×	25 0.6×	35	425
J. H. Dinan United States	10	262 0.9×	132 0.5×	190 1.3×	21 0.3×	52 1.2×	21	357
Kenichi Ohtsuka Japan	11	292 1.0×	177 0.7×	146 1.0×	25 0.4×	22 0.5×	37	383
R. J. Kriegler Canada	9	235 0.8×	101 0.4×	85 0.6×	37 0.6×	14 0.3×	16	298
J.D. Woodhouse United States	9	305 1.0×	262 1.1×	177 1.2×	114 1.8×	34 0.8×	24	456
Kazunori Moriki Japan	13	270 0.9×	165 0.7×	135 0.9×	16 0.3×	31 0.7×	37	363
H.P. Zeindl Germany	12	283 1.0×	144 0.6×	231 1.6×	61 1.0×	38 0.9×	33	387
Bo-Rong Shi China	13	360 1.2×	170 0.7×	394 2.7×	158 2.5×	34 0.8×	84	570

Countries citing papers authored by V. D. Tkachev

Since Specialization

Citations

This map shows the geographic impact of V. D. Tkachev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. D. Tkachev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. D. Tkachev more than expected).

Fields of papers citing papers by V. D. Tkachev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. D. Tkachev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. D. Tkachev. The network helps show where V. D. Tkachev may publish in the future.

Co-authorship network of co-authors of V. D. Tkachev

This figure shows the co-authorship network connecting the top 25 collaborators of V. D. Tkachev. A scholar is included among the top collaborators of V. D. Tkachev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. D. Tkachev. V. D. Tkachev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Алдошин, С. М., G.V. Shilov, V. D. Tkachev, et al.. (2020). Synthesis, crystal molecular structure, and magnetic characteristics of coordination polymers formed by Co(ii) diketonates with pentaheterocyclic triphenodioxazines. New Journal of Chemistry. 45(1). 304–313. 10 indexed citations

Tkachev, V. D., et al.. (1985). Cathodoluminescence of Cubic Boron Nitride ‐ Mössbauer‐Type Spectra. physica status solidi (b). 127(1). 13 indexed citations

Tkachev, V. D., et al.. (1985). Diffusion of Boron Implanted into Silicon. physica status solidi (a). 89(1). K45–K49. 1 indexed citations

Petrov, Victor, et al.. (1985). Donor centers in irradiated Si doped with rare-earth elements. physica status solidi (a). 88(2). K141–K144. 3 indexed citations

Tkachev, V. D., A.M. Zaitsev, & В. В. Ткачев. (1985). Chemical Activity of Noble Gases in Diamond. physica status solidi (b). 129(1). 129–133. 12 indexed citations

Мудрый, А. В., et al.. (1984). Noble Gas Atoms as Interstitials in Silicon and Diamond. physica status solidi (b). 125(1). 5 indexed citations

Tkachev, V. D., et al.. (1984). Damage Profiles in Ion Implanted Silicon. physica status solidi (a). 85(1). K43–K46. 20 indexed citations

Tkachev, V. D., et al.. (1981). Capture Mechanism of Holes by Radiation Defects with E_c ‐ 0.20 eV Level in Sb‐Doped Ge. physica status solidi (b). 104(2). 1 indexed citations

Tkachev, V. D., et al.. (1980). Effect of Noble Gas Atoms on the Energy Spectrum of Defects in Semiconductors. physica status solidi (b). 102(2). 3 indexed citations

10.

Tkachev, V. D., et al.. (1980). Annealing of lattice damage in ion implanted silicon. Radiation Effects. 49(1-3). 133–136. 16 indexed citations

11.

Tkachev, V. D., et al.. (1978). Subgroup method for taking account of the spatial distribution of unscattered and singly scattered neutrons in multigroup shielding calculations. Atomic Energy. 44(4). 370–373. 1 indexed citations

12.

Tkachev, V. D. & А. В. Мудрый. (1978). Piezospectroscopic effect on zero-phonon luminescence lines of silicon. Journal of Applied Spectroscopy. 29(6). 1485–1491. 11 indexed citations

13.

Poklonski, N. A., et al.. (1978). Screening of Electrostatic Fields in Semiconductors by Multicharged Defects. physica status solidi (b). 88(2). 18 indexed citations

14.

Дроздов, Н. А., et al.. (1977). On the nature of the dislocation luminescence in silicon. physica status solidi (b). 83(2). 60 indexed citations

15.

Tkachev, V. D., et al.. (1977). Investigation of shallow radiation defect levels produced in Ge by fast-neutron irradiation. physica status solidi (a). 44(2). 435–442. 5 indexed citations

16.

Дроздов, Н. А., et al.. (1976). Recombination radiation on dislocations in silicon. 23. 597. 116 indexed citations

17.

Кузнецов, В. И., et al.. (1975). Inversion of the type of conduction and stabilization of the Fermi level in irradiated silicon. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

18.

Tkachev, V. D., et al.. (1974). Emissive recombination of free excitons in ZnTe at high optical excitation levels. Journal of Applied Spectroscopy. 21(6). 1621–1625. 1 indexed citations

19.

Tkachev, V. D., et al.. (1972). INTERACTION OF LITHIUM WITH RADIATION DEFECTS IN PURE n-TYPE GERMANIUM.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

20.

Tkachev, V. D., et al.. (1971). Investigation of divacancies in silicon. Radiation Effects. 9(1-2). 81–81. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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