D. Slobodin

635 total citations
26 papers, 556 citations indexed

About

D. Slobodin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Slobodin has authored 26 papers receiving a total of 556 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Slobodin's work include Thin-Film Transistor Technologies (23 papers), Silicon and Solar Cell Technologies (13 papers) and Silicon Nanostructures and Photoluminescence (13 papers). D. Slobodin is often cited by papers focused on Thin-Film Transistor Technologies (23 papers), Silicon and Solar Cell Technologies (13 papers) and Silicon Nanostructures and Photoluminescence (13 papers). D. Slobodin collaborates with scholars based in United States and Germany. D. Slobodin's co-authors include S. Wagner, S. Aljishi, V. Chu, Z E. Smith, R. Schwarz, J. Kolodzey, Kimberly B. Shepard, T. L. Chu, Patrick M. Lenahan and M. Bennett and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

D. Slobodin

25 papers receiving 525 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Slobodin United States	12	516	392	75	62	36	26	556
S. Aljishi United States	13	719 1.4×	584 1.5×	34 0.5×	87 1.4×	47 1.3×	52	765
Hideo Kidoh Japan	9	295 0.6×	282 0.7×	34 0.5×	53 0.9×	25 0.7×	14	388
S.P.S. Arya India	9	137 0.3×	261 0.7×	105 1.4×	31 0.5×	18 0.5×	12	349
A. V. Gelatos United States	12	565 1.1×	373 1.0×	33 0.4×	112 1.8×	26 0.7×	28	600
M. Janai Israel	13	455 0.9×	310 0.8×	15 0.2×	44 0.7×	18 0.5×	31	517
Kiichiro Mukai Japan	8	311 0.6×	109 0.3×	48 0.6×	53 0.9×	24 0.7×	20	348
A. A. Langford United States	5	575 1.1×	487 1.2×	15 0.2×	38 0.6×	13 0.4×	6	608
A. J. M. Berntsen Netherlands	12	357 0.7×	180 0.5×	21 0.3×	30 0.5×	112 3.1×	22	395
J. T. Fitch United States	11	507 1.0×	292 0.7×	36 0.5×	107 1.7×	7 0.2×	29	575
W. W. Grannemann United States	11	297 0.6×	233 0.6×	26 0.3×	101 1.6×	14 0.4×	33	416

Countries citing papers authored by D. Slobodin

Since Specialization

Citations

This map shows the geographic impact of D. Slobodin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Slobodin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Slobodin more than expected).

Fields of papers citing papers by D. Slobodin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Slobodin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Slobodin. The network helps show where D. Slobodin may publish in the future.

Co-authorship network of co-authors of D. Slobodin

This figure shows the co-authorship network connecting the top 25 collaborators of D. Slobodin. A scholar is included among the top collaborators of D. Slobodin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Slobodin. D. Slobodin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chu, V., et al.. (1989). Thermal relaxation of the electric conductivity in amorphous silicon-germanium alloys. Physical review. B, Condensed matter. 40(9). 6424–6427. 9 indexed citations

Schwarz, R., K. Dietrich, Stefan Goedecker, et al.. (1987). Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F. MRS Proceedings. 95. 2 indexed citations

Aljishi, S., V. Chu, Z E. Smith, et al.. (1987). Steady state and transient transport in a-Si, Ge : H, F alloys. Journal of Non-Crystalline Solids. 97-98. 1023–1026. 21 indexed citations

Schwarz, R., et al.. (1987). Hydrogen Diffusion in Undoped a-Si:H. MRS Proceedings. 95. 4 indexed citations

Smith, Z E., V. Chu, Kimberly B. Shepard, et al.. (1987). Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films. Applied Physics Letters. 50(21). 1521–1523. 152 indexed citations

SCHAEFER, H., et al.. (1987). Reply to the comment by S. Dannefaer et al. on the paper of H. E. Schaefer et al. on ?amorphous hydrogenated silicon studied by positron lifetime spectroscopy?. Applied Physics A. 43(4). 295–296. 15 indexed citations

Aljishi, S., D. S. Shen, V. Chu, et al.. (1987). Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys. MRS Proceedings. 95. 1 indexed citations

Smith, Z E., S. Aljishi, D. S. Shen, et al.. (1987). Stress and microstructural effects on equilibrium and non-equilibrium defects in amorphous silicon. AIP conference proceedings. 157. 171–178. 5 indexed citations

Slobodin, D., S. Aljishi, & S. Wagner. (1987). Deposition of A-Ge:H by Gef₄/H ₂ Glow Discharge. MRS Proceedings. 98. 1 indexed citations

10.

Aljishi, S., Z E. Smith, V. Chu, et al.. (1987). Light-induced defect generation and thermal healing in amorphous silicon-germanium alloys. AIP conference proceedings. 157. 25–32. 9 indexed citations

11.

Aljishi, S., Z E. Smith, D. Slobodin, et al.. (1986). Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys. MRS Proceedings. 70. 22 indexed citations

12.

Smith, Z E., S. Aljishi, D. Slobodin, et al.. (1986). Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon. Physical Review Letters. 57(19). 2450–2453. 129 indexed citations

13.

Aljishi, S., et al.. (1986). The dielectric constants of a-Si,Ge:H,F alloys. Materials Letters. 4(5-7). 320–322. 3 indexed citations

14.

Kolodzey, J., S. Aljishi, R. Schwarz, D. Slobodin, & S. Wagner. (1986). Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(6). 2499–2504. 35 indexed citations

15.

Okada, Y., et al.. (1986). Infrared Spectroscopy of Deuterated a-Si, Ge:D, F Alloys Prepared by DC Glow Discharge Deposition. MRS Proceedings. 70. 7 indexed citations

16.

Slobodin, D., S. Aljishi, Y. Okada, et al.. (1986). a-(Si, Ge):H, F Alloys Prepared from SiH₄ and GeF₄. MRS Proceedings. 70. 12 indexed citations

17.

Slobodin, D., S. Aljishi, R. Schwarz, & S. Wagner. (1985). Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge Deposition. MRS Proceedings. 49. 20 indexed citations

18.

Schwarz, R., D. Slobodin, & S. Wagner. (1985). Differential surface photovoltage measurement of minority-carrier diffusion length in thin films. Applied Physics Letters. 47(7). 740–742. 18 indexed citations

19.

Kolodzey, J., D. Slobodin, S. Aljishi, et al.. (1985). Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges. Journal of Non-Crystalline Solids. 77-78. 897–900. 7 indexed citations

20.

Shapiro, Robert & D. Slobodin. (1969). Synthesis of the dibenzo[b,g]oxocin system. The Journal of Organic Chemistry. 34(4). 1165–1168. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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