S.O. Park

805 total citations
26 papers, 621 citations indexed

About

S.O. Park is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, S.O. Park has authored 26 papers receiving a total of 621 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in S.O. Park's work include Semiconductor materials and devices (8 papers), Phase-change materials and chalcogenides (7 papers) and Advanced Memory and Neural Computing (6 papers). S.O. Park is often cited by papers focused on Semiconductor materials and devices (8 papers), Phase-change materials and chalcogenides (7 papers) and Advanced Memory and Neural Computing (6 papers). S.O. Park collaborates with scholars based in South Korea, China and United States. S.O. Park's co-authors include Dae-Hwan Ahn, D.H. Im, Hideki Horii, D.H. Kim, Joo Tae Moon, J.H. Park, U‐In Chung, Jung-Hwan Moon, Chilhee Chung and Seok-Woo Nam and has published in prestigious journals such as Applied Surface Science, Thin Solid Films and Journal of Magnetism and Magnetic Materials.

In The Last Decade

S.O. Park

23 papers receiving 591 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S.O. Park South Korea	10	506	485	142	133	80	26	621
Roberto Bez Italy	11	390 0.8×	494 1.0×	112 0.8×	91 0.7×	70 0.9×	23	580
Dae-Hwan Ahn South Korea	13	417 0.8×	609 1.3×	135 1.0×	75 0.6×	72 0.9×	37	662
S. A. Kostylev United States	9	425 0.8×	402 0.8×	113 0.8×	110 0.8×	49 0.6×	17	495
Mattia Boniardi Italy	15	588 1.2×	617 1.3×	214 1.5×	104 0.8×	72 0.9×	25	685
Ting-Ao Tang China	14	419 0.8×	566 1.2×	99 0.7×	118 0.9×	126 1.6×	52	662
R. Annunziata Italy	11	459 0.9×	501 1.0×	78 0.5×	113 0.8×	74 0.9×	28	535
Daolin Cai China	12	399 0.8×	401 0.8×	118 0.8×	76 0.6×	56 0.7×	46	461
T. Lowrey United States	8	348 0.7×	373 0.8×	77 0.5×	99 0.7×	35 0.4×	12	423
D. K. Sharma India	9	408 0.8×	411 0.8×	124 0.9×	119 0.9×	36 0.5×	20	512
Marissa A. Caldwell United States	11	442 0.9×	388 0.8×	61 0.4×	74 0.6×	99 1.2×	16	505

Countries citing papers authored by S.O. Park

Since Specialization

Citations

This map shows the geographic impact of S.O. Park's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.O. Park with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.O. Park more than expected).

Fields of papers citing papers by S.O. Park

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.O. Park. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.O. Park. The network helps show where S.O. Park may publish in the future.

Co-authorship network of co-authors of S.O. Park

This figure shows the co-authorship network connecting the top 25 collaborators of S.O. Park. A scholar is included among the top collaborators of S.O. Park based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.O. Park. S.O. Park is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Kim, Dong Jun, Shung H. Sung, Inhwa Lee, et al.. (2025). Role of loading mode on crack propagation behavior and adhesion at Cu–SiCN interface. Applied Surface Science. 688. 162461–162461. 1 indexed citations

Kim, Dong Jun, Won S. Choi, Hung‐Ju Chang, et al.. (2025). Identifying the weakest interface in BEOL structures. Applied Surface Science. 701. 163228–163228.

Kim, Dong Jun, Su-Min Kang, Inhwa Lee, et al.. (2024). Effects of surface treatments for the adhesion improvement between Cu and SiCN in BEOL interconnect. Surfaces and Interfaces. 51. 104734–104734. 1 indexed citations

Kim, Dong Jun, et al.. (2023). Optimization of Cu interconnects - SiCN interfacial adhesion by surface treatments. 367–373. 1 indexed citations

Park, J.H., Jae Hoon Kim, Dae‐Hong Ko, et al.. (2016). Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices. Thin Solid Films. 616. 502–506. 6 indexed citations

Park, S.O., et al.. (2012). Adaptive power management system for mobile multimedia device. IET Communications. 6(11). 1407–1415. 3 indexed citations

Im, D.H., D.H. Kim, Hae‐Sim Park, et al.. (2008). A unified 7.5nm dash-type confined cell for high performance PRAM device. 1–4. 74 indexed citations

Im, D.H., D.H. Kim, Dae-Hwan Ahn, et al.. (2006). Parallel multi-confined (PMC) cell technology for high density MLC PRAM. Symposium on VLSI Technology. 220–221. 12 indexed citations

Cha, Dongkyu, Su Jin Ahn, Hideki Horii, et al.. (2006). A direct observation on the structure evolution of memory-switching phenomena using in-situ TEM. Symposium on VLSI Technology. 204–205. 4 indexed citations

10.

Oh, Sechang, et al.. (2006). Magnetic and Electrical Properties of Magnetic Tunnel Junctions With Radical Oxidized MgO Barriers. IEEE Transactions on Magnetics. 42(10). 2642–2644. 4 indexed citations

11.

Im, D.H., S.O. Park, H.S. Kim, et al.. (2006). Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation. 1–4.

12.

Im, D.H., S.O. Park, H.S. Kim, et al.. (2005). Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology. 100–101. 12 indexed citations

13.

Oh, Sechang, et al.. (2005). Development of magnetic tunnel junction for toggle MRAM. IEEE Transactions on Magnetics. 41(10). 2661–2663. 9 indexed citations

14.

Baek, In-Hwan, Sechang Oh, S.O. Park, et al.. (2004). Key Factors to Enhance the Switching Characteristics in Submicron MRAM Cells. IEEE Transactions on Magnetics. 40(4). 2616–2618. 4 indexed citations

15.

Oh, Jung-Hwan, J.H. Park, Hyojung Kim, et al.. (2004). A novel process for highly manufacturable MRAM. Journal of Magnetism and Magnetic Materials. 272-276. 1936–1938. 8 indexed citations

16.

Lee, Sangyoon, H. J. Joo, Dong-Hoon Jung, et al.. (2003). Novel integration technologies for highly manufacturable 32 Mb FRAM. 210–211. 5 indexed citations

17.

Lee, Jong‐Soo, et al.. (2003). Al2O3 nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition. Journal of Crystal Growth. 254(3-4). 443–448. 86 indexed citations

18.

Min, Byoung Koun, Jong‐Soo Lee, JiHyeon Hwang, et al.. (2003). Al2O3 coating of ZnO nanorods by atomic layer deposition. Journal of Crystal Growth. 252(4). 565–569. 42 indexed citations

19.

Kwon, Kee-Won, et al.. (2002). Degradation-free Ta/sub 2/O/sub 5/ capacitor after BPSG reflow at 850°C for high density DRAMs. 34. 53–56.

20.

Lee, Sangyoon, Youjian Song, Bonjae Koo, et al.. (1999). A FRAM technology using 1T1C and triple metal layers for high performance and high density FRAMs. 141–142. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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