T. Tsurushima

550 total citations
37 papers, 424 citations indexed

About

T. Tsurushima is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, T. Tsurushima has authored 37 papers receiving a total of 424 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 12 papers in Computational Mechanics. Recurrent topics in T. Tsurushima's work include Semiconductor materials and devices (18 papers), Silicon and Solar Cell Technologies (13 papers) and Ion-surface interactions and analysis (12 papers). T. Tsurushima is often cited by papers focused on Semiconductor materials and devices (18 papers), Silicon and Solar Cell Technologies (13 papers) and Ion-surface interactions and analysis (12 papers). T. Tsurushima collaborates with scholars based in Japan, Poland and United States. T. Tsurushima's co-authors include Taizoh Sadoh, H. Tanoue, H. Nakashima, Toshihiko Kanayama, Yunosuke Makita, H. Nakashima, J. F. Gibbons, E. Hechtl, Akira Baba and Shun‐ichi Gonda and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

T. Tsurushima

35 papers receiving 385 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Tsurushima Japan 13 356 191 122 101 27 37 424
Tadatsugu Itoh Japan 12 351 1.0× 152 0.8× 110 0.9× 157 1.6× 7 0.3× 44 422
Nikolai Yarykin Russia 13 493 1.4× 292 1.5× 84 0.7× 156 1.5× 9 0.3× 72 536
C. Flink United States 13 622 1.7× 417 2.2× 67 0.5× 149 1.5× 13 0.5× 27 688
Li-Qun Xia United States 10 316 0.9× 145 0.8× 45 0.4× 127 1.3× 7 0.3× 24 397
Gang Bai United States 11 283 0.8× 377 2.0× 44 0.4× 146 1.4× 64 2.4× 32 506
W. Vandervorst Belgium 10 282 0.8× 92 0.5× 65 0.5× 103 1.0× 6 0.2× 21 331
M. Meuris Belgium 16 527 1.5× 213 1.1× 149 1.2× 193 1.9× 5 0.2× 35 589
Hiroki Hamada Japan 11 375 1.1× 192 1.0× 42 0.3× 141 1.4× 8 0.3× 52 434
Henry T. Minden United States 12 243 0.7× 175 0.9× 23 0.2× 152 1.5× 8 0.3× 34 355
L. M. Williams United States 9 259 0.7× 151 0.8× 17 0.1× 229 2.3× 44 1.6× 20 378

Countries citing papers authored by T. Tsurushima

Since Specialization
Citations

This map shows the geographic impact of T. Tsurushima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Tsurushima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Tsurushima more than expected).

Fields of papers citing papers by T. Tsurushima

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Tsurushima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Tsurushima. The network helps show where T. Tsurushima may publish in the future.

Co-authorship network of co-authors of T. Tsurushima

This figure shows the co-authorship network connecting the top 25 collaborators of T. Tsurushima. A scholar is included among the top collaborators of T. Tsurushima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Tsurushima. T. Tsurushima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Asano, Tanemasa, Naoya Watanabe, Isao Tsunoda, et al.. (2009). Compliant bump technology for back-side illuminated CMOS image sensor. 44. 40–45. 2 indexed citations
2.
Yasumoto, M., Eiji Ishiguro, T. Tomimasu, et al.. (2003). The X-ray microscopy project at Saga SLS. Journal de Physique IV (Proceedings). 104. 63–66. 1 indexed citations
3.
Baba, Akira, Atsushi Kenjo, Taizoh Sadoh, et al.. (2002). Silicon fine structure formation on sapphire with focused ion beam. 2. 1101–1104. 1 indexed citations
4.
Sadoh, Taizoh, et al.. (2001). High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode. Japanese Journal of Applied Physics. 40(4S). 2775–2775. 1 indexed citations
5.
Matsuo, S., Masakazu Yamamoto, Taizoh Sadoh, et al.. (2000). Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma. Journal of Applied Physics. 88(3). 1664–1669. 11 indexed citations
6.
Matsuo, S., Masakazu Yamamoto, Taizoh Sadoh, et al.. (1999). ECR Plasma Oxidation: Dependence on Energy of Argon Ion. MRS Proceedings. 585. 1 indexed citations
7.
Sadoh, Taizoh, Kazuyoshi Tsukamoto, Akira Baba, et al.. (1997). Deep level of iron-hydrogen complex in silicon. Journal of Applied Physics. 82(8). 3828–3831. 35 indexed citations
8.
Gao, Dawei, K. Muraoka, H. Nakashima, et al.. (1997). Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma. Journal of Applied Physics. 82(11). 5680–5685. 25 indexed citations
9.
Muraoka, Katsunori, et al.. (1997). Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma. Japanese Journal of Applied Physics. 36(12B). L1692–L1692. 1 indexed citations
10.
Nakashima, H., Taizoh Sadoh, & T. Tsurushima. (1995). Recombination-Enhanced Migration of Interstitial Iron in Silicon. Materials science forum. 196-201. 1351–1356. 1 indexed citations
11.
Nakashima, H., Taizoh Sadoh, & T. Tsurushima. (1994). Electrical and thermal properties of structurally metastable iron-boron pairs in silicon. Physical review. B, Condensed matter. 49(24). 16983–16993. 15 indexed citations
12.
Sadoh, Taizoh, et al.. (1994). Behavior of Defects Induced by Low-Energy Ions in Silicon Films. Japanese Journal of Applied Physics. 33(12S). 7151–7151. 4 indexed citations
13.
Nakashima, Hiroshi, Taizoh Sadoh, & T. Tsurushima. (1993). Hole traps of metastable iron-boron pairs in silicon. Journal of Applied Physics. 73(6). 2803–2808. 6 indexed citations
14.
Sadoh, Taizoh, H. Nakashima, & T. Tsurushima. (1992). Deep levels of vanadium and vanadium-hydrogen complex in silicon. Journal of Applied Physics. 72(2). 520–524. 35 indexed citations
15.
Fujimoto, Akira, et al.. (1980). Photoluminescence of nitrogen (N)-implanted and N-free In0.30Ga0.70P grown by liquid phase epitaxy. Journal of Applied Physics. 51(7). 3987–3989. 7 indexed citations
16.
Makita, Yunosuke, et al.. (1979). Observation of i n s i t u annealing in hot ion-implantation of nitrogen into AlxGa1−xAs (x=0.53). Applied Physics Letters. 35(3). 293–295. 4 indexed citations
17.
Makita, Yunosuke, et al.. (1976). Enhancement of emission intensity in indirect-gap AlxGa1−xAs (x=0.53) by nitrogen-ion implantation. Applied Physics Letters. 28(2). 103–105. 10 indexed citations
18.
Tsurushima, T., et al.. (1976). Ion Bombardment Enhanced Selective Etching of Garnets. IEEJ Transactions on Fundamentals and Materials. 96(11). 527–534.
19.
Makita, Yunosuke, Shun‐ichi Gonda, H. Tanoue, T. Tsurushima, & Shigeru Maekawa. (1974). Hot Implantation of Nitrogen Ions into GaAs1-xPx(x=0.36). Japanese Journal of Applied Physics. 13(3). 563–564. 9 indexed citations
20.
Gibbons, J. F., E. Hechtl, & T. Tsurushima. (1969). ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON. Applied Physics Letters. 15(4). 117–119. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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